本文選題：鈷 + 銅��； 參考：《微納電子技術》2017年07期

【摘要】：在Co化學機械拋光(CMP)過程中,Co的化學反應活性強于Cu,Co/Cu界面存在較大的電化學腐蝕電位差。采用動電位掃描電化學技術,表征金屬銅鈷表面的電化學反應。采用降低Cu/Co接觸腐蝕電位差的方法,表征銅鈷電偶腐蝕。研究了阻擋層CMP中影響銅鈷電偶腐蝕的幾個因素:pH值、H_2O_2和FA/O螯合劑;并對其控制機理進行了深入的研究。實驗結果表明:pH值對鈷的腐蝕電位影響較大,對銅的腐蝕電位影響不大,隨著pH值的增加降低了銅和鈷的腐蝕電位差;在堿性環(huán)境下,H_2O_2可降低Cu和Co的腐蝕電位差(最小可降到3 mV),可有效抑制Cu和Co之間電偶腐蝕現(xiàn)象的產(chǎn)生;在H_2O_2基電解液中添加適量的FA/O螯合劑有助于降低Cu和Co的腐蝕電位差,對抑制Cu和Co電偶腐蝕現(xiàn)象的產(chǎn)生具有重大的作用。
[Abstract]:In the process of chemical mechanical polishing (CMP) of Co, the chemical reaction activity of Co is stronger than that of Cu / Co / Cu. There is a large potential difference in electrochemical corrosion. The electrochemical reaction on the surface of copper and cobalt was characterized by potentiodynamic scanning electrochemical technique. The copper / cobalt galvanic corrosion was characterized by reducing the potential difference of Cu / Co contact corrosion. Several factors affecting copper and cobalt galvanic corrosion in barrier layer CMP are studied. The chelating agents such as H _ 2O _ 2 and FA-O chelating agents of H _ 2O _ 2 and FA-P _ O are studied, and their control mechanism is also studied. The experimental results show that the corrosion potential of cobalt is greatly affected by the pH value, but not by the corrosion potential of copper. The corrosion potential difference between copper and cobalt decreases with the increase of pH value. In alkaline environment, the H _ 2O _ 2 can reduce the corrosion potential difference between Cu and Co (the minimum can be reduced to 3 MV / L), which can effectively inhibit the occurrence of galvanic corrosion between Cu and Co; The addition of a proper amount of FA-O chelating agent in the H2O2-base electrolyte can reduce the corrosion potential difference between Cu and Co and play an important role in inhibiting the occurrence of Cu and Co galvanic corrosion.
【作者單位】： 河北工業(yè)大學電子信息工程學院;天津市電子材料與器件重點實驗室;
【基金】：國家科技重大專項子課題資助項目(2016ZX02301003-004-007) 河北省自然科學基金青年基金資助項目(F2015202267) 河北工業(yè)大學優(yōu)秀青年科技創(chuàng)新基金資助項目(2015007) 天津市電子材料與器件重點實驗室資助項目
【分類號】：TN40
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本文編號：2002681