本文選題：毫米波 + AlGaN/GaN　； 參考：《電子科技大學(xué)》2015年碩士論文

【摘要】：作為第三代半導(dǎo)體材料代表的GaN材料,相對(duì)來(lái)說具有禁帶寬度大、擊穿場(chǎng)強(qiáng)高以及高電子密度和高的電子遷移率等優(yōu)點(diǎn),因此成為高溫、高頻、微波毫米波領(lǐng)域半導(dǎo)體器件的理想材料。近年來(lái),GaN基高電子遷移率晶體管(HEMTs)在高頻大功率電路中的應(yīng)用越來(lái)越得到人們的肯定并引起科研工作者和半導(dǎo)體公司的廣泛研究。其中,AlGaN/GaN HEMT由于高的擊穿電壓和高的輸出功率密度尤其受到青睞。目前,對(duì)微波頻段的GaN HEMT物理模型和器件結(jié)構(gòu)的研究已經(jīng)很多,但毫米波段的研究報(bào)道還比較少。本文主要圍繞毫米波段的AlGaN/GaN HEMT器件物理建模和場(chǎng)板技術(shù)展開研究,主要工作和創(chuàng)新點(diǎn)如下:首先,本文選擇具有代表性的100nm柵長(zhǎng)毫米波AlGaN/GaN HEMT器件作為研究對(duì)象,建立了完善的物理模型,該模型考慮了器件的表面態(tài)、陷阱和自熱等效應(yīng),仿真得到的DC和RF特性曲線與器件實(shí)測(cè)結(jié)果吻合良好。利用該模型對(duì)器件的直流特性、頻率特性、擊穿特性和熱特性等進(jìn)行了仿真分析。其次,分析了器件物理結(jié)構(gòu)參數(shù)變化對(duì)器件性能的影響,結(jié)果表明:柵源距離的增大會(huì)大幅降低器件的飽和輸出電流;柵漏距離的增大可以提高器件的擊穿電壓,但同時(shí)也會(huì)造成器件截止頻率的降低和膝電壓的增大。最后,系統(tǒng)研究了場(chǎng)板技術(shù)在毫米波AlGaN/GaN HEMT器件中的應(yīng)用,分析了柵場(chǎng)板結(jié)構(gòu)、源場(chǎng)板結(jié)構(gòu)和柵源雙場(chǎng)板結(jié)構(gòu)對(duì)器件擊穿電壓的提高作用,并對(duì)柵場(chǎng)板和源場(chǎng)板結(jié)構(gòu)進(jìn)行了優(yōu)化設(shè)計(jì)。當(dāng)場(chǎng)板長(zhǎng)度為0.2μm,距離勢(shì)壘層距離為40nm時(shí)可取得對(duì)勢(shì)壘層電場(chǎng)的最佳調(diào)制效果,器件的擊穿電壓提高最多;三種結(jié)構(gòu)得到的最大擊穿電壓分別為86V、74V和92V;采用柵源雙場(chǎng)板結(jié)構(gòu)對(duì)器件飽和輸出功率密度的提高可高達(dá)38.5%,但雙場(chǎng)板的使用也會(huì)嚴(yán)重惡化器件的頻率特性。本文著重于使用TCAD工具來(lái)模擬毫米波GaN HEMT工作機(jī)制,預(yù)測(cè)器件性能,并對(duì)器件結(jié)構(gòu)進(jìn)行優(yōu)化設(shè)計(jì),對(duì)于毫米波GaN HEMT器件物理建模和結(jié)構(gòu)優(yōu)化具有指導(dǎo)意義。
[Abstract]:Gan, which is the representative of the third generation semiconductor materials, has the advantages of large band gap, high breakdown field strength, high electron density and high electron mobility, so it becomes high temperature and high frequency. Ideal material for semiconductor devices in the field of microwave and millimeter wave. In recent years, the application of GaN-based high electron mobility transistor (HEMTs) in high frequency and high power circuits has been more and more recognized and widely studied by researchers and semiconductor companies. AlGaN / gan HEMT is especially popular because of its high breakdown voltage and high output power density. At present, many researches have been done on the physical model and device structure of gan HEMT in microwave band, but there are few reports in millimeter band. This paper focuses on the physical modeling and field board technology of AlGaN / gan HEMT devices in millimeter band. The main work and innovations are as follows: firstly, the representative 100nm gate long millimeter wave AlGaN / gan HEMT devices are selected as the research object. A perfect physical model is established, which takes into account the surface state, trap and self-heating effects of the device. The DC and RF characteristic curves obtained by simulation agree well with the measured results. The DC, frequency, breakdown and thermal characteristics of the device are simulated and analyzed by using the model. Secondly, the effect of device physical structure parameters on the device performance is analyzed. The results show that the increase of gate source distance will greatly reduce the saturation output current of the device, and the increase of gate leakage distance can increase the breakdown voltage of the device. At the same time, the cutoff frequency of the device and the voltage of the knee will be increased. Finally, the application of field board technology in millimeter-wave AlGaN / gan HEMT devices is systematically studied. The effects of gate field plate structure, source field plate structure and gate dual field structure on the breakdown voltage are analyzed. The gate field plate and source field plate structure are optimized. When the length of the plate is 0.2 渭 m and the distance from the barrier layer is 40nm, the optimal modulation effect of the electric field of the barrier layer can be obtained, and the breakdown voltage of the device increases the most. The maximum breakdown voltages of the three structures are 86V, 74V and 92V, respectively. The output power density of the device can be increased up to 38.5 by using the gate source dual-field plate structure, but the frequency characteristics of the device will be seriously deteriorated by the use of the double-field plate. In this paper, TCAD tools are used to simulate the mechanism of millimeter wave gan HEMT, to predict the performance of the device, and to optimize the device structure, which is of great significance for the physical modeling and structural optimization of millimeter wave gan HEMT devices.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN386

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 趙正平;;微波、毫米波GaN HEMT與MMIC的新進(jìn)展[J];半導(dǎo)體技術(shù);2015年01期

相關(guān)碩士學(xué)位論文 前1條

1 趙子奇;GaN基HEMT耐壓結(jié)構(gòu)的研究與設(shè)計(jì)[D];電子科技大學(xué);2007年

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本文編號(hào)：2002170