發(fā)布時間：2018-06-08 01:30

  本文選題：量子阱 + 應變��； 參考：《太原理工大學》2017年碩士論文

【摘要】：近年來互聯(lián)網流量大幅度增加,同時增加的是對信息高速傳輸?shù)囊?半導體激光器被廣泛應用于通信領域,并且被拓展到軍事安全反導,醫(yī)療器械,生物工程,工業(yè)制件等方面。本文主要對信息技術領域的寬帶模擬通信用光收發(fā)陣列芯片與模塊中的高線性激光器陣列芯片的研發(fā)做了具體理論分析、軟件模擬、實踐實驗等,對多量子阱直接調制應變量子阱激光器在材料選取、器件結構方向進行了理論研究和器件模擬。本文選取AlGaInAs材料體系進行了理論研究討論,研討有源區(qū)量子阱的應變補償量,量子阱的數(shù)量,量子阱的寬度與厚度,激光器工作溫度等激光器的結構參數(shù)。最終根據電流電壓閾值、載流子密度等電學特性、光學特性,設計出激光器有源區(qū)多量子阱結構,襯底結構,光柵結構,以及整體結構的基本原理和關鍵技術,得到我們所需的直接調制大功率高線性量子阱激光器。本論文主要研究的是以下幾個方面的工作:1、闡述了半導體激光器的發(fā)展,半導體材料發(fā)光的原理及特性,包括激射原理以及閾值電流等特性。研究優(yōu)化了多量子阱激光器的量子阱的數(shù)量、溫度、應變等,通過理論計算和實際生長優(yōu)化滿足高線性大功率直接調制的最佳應變量子阱,提高激光器的量子效率和微分增益,提高馳豫振蕩頻率,減小線寬因子,減小頻率啁啾,以實現(xiàn)激光器大功率的要求。2、本課題組通過實驗分析InGaAsP/InP和AlGaInAs/InP材料體系對載流子限制能力和增益,選取AlGaIn As/InP材料體系制作DFB激光關鍵工藝。并研究了激光器微分增益和量子效率,以實現(xiàn)激光器的高頻調制特性。3、研究光柵的結構。通過光柵結構改變造成的激光質量,設計研究增益耦合型光柵結構,利用E-beam獲取不同周期的相移光柵,低損傷ICP干法刻蝕工藝技術。使得“燒孔效應”得到明顯改善,極大提高了線性指標,控制光柵周期,實現(xiàn)波長精確控制。4、在材料生長方面,在現(xiàn)有MOCVD進行材料外延生長技術的基礎上,進一步研究生長工藝,從生長條件分析,生長材料選擇確定生長方案,制備出滿足高線性大功率直接調制要求性能的多量子阱結構,提供高質量外延片。5、在材料和器件結構上,利用ALDS激光材料和結構設計仿真軟件,進行高線性大功率直接調制應變多量子阱激光器各項性能的優(yōu)化設計,得出閾值電流等的特性曲線。最終實現(xiàn)1310nm波段(高頻響應覆蓋12GHz以下頻率范圍)模擬通信大功率(單信道芯片出光功率大于10d Bm)激光器芯片樣品。實驗結果表明,所設計激光芯片具有優(yōu)良的閾值電流、輸出功率等參數(shù)特性。
[Abstract]:In recent years, Internet traffic has increased significantly, while the requirements for high-speed information transmission have been increased. Semiconductor lasers have been widely used in the field of communications, and have been extended to military security, antimissile, medical devices, and bioengineering. Industrial parts, etc. This paper mainly focuses on the research and development of broadband analog communication optical transceiver array chip and high linearity laser array chip in the field of information technology, such as theoretical analysis, software simulation, practical experiment, etc. The theoretical study and device simulation of multiple quantum well direct-modulated strained quantum well lasers in material selection and device structure direction have been carried out. In this paper, AlGaInAs system is selected for theoretical study, and the structure parameters of the laser, such as strain compensation, quantum well number, width and thickness of quantum well, laser operating temperature and so on, are discussed. Finally, according to the current and voltage threshold, carrier density and other electrical and optical characteristics, the basic principles and key technologies of the active region of the laser are designed, such as the structure of multiple quantum wells, the substrate structure, the grating structure, and the whole structure. The direct modulation high power and high linear quantum well lasers are obtained. This paper mainly studies the following aspects of work: 1, describes the development of semiconductor lasers, the principle and characteristics of semiconductor materials luminescence, including the principle of emission and threshold current characteristics. The quantum well number, temperature and strain of multiple quantum well lasers are optimized. By theoretical calculation and practical growth, the optimal strain quantum wells satisfying high linear and high power direct modulation are optimized to improve the quantum efficiency and differential gain of the laser. In order to meet the requirement of high power, the relaxation oscillation frequency, the linewidth factor and the frequency chirp are increased. The experiment results show that the InGaAsP / InP and AlGaInAs / InP / InP systems can limit the carrier capacity and gain. Select AlGaIn as / InP system to fabricate the key technology of DFB laser. The differential gain and quantum efficiency of the laser are studied in order to realize the high frequency modulation characteristics of the laser. The structure of the grating is studied. Through the laser quality caused by the change of the grating structure, the gain coupled grating structure is designed and studied. The phase shift grating with different periods is obtained by using E-beam, and the low damage ICP dry etching technique is used. The "hole burning effect" is obviously improved, the linear index is greatly improved, the grating period is controlled, and the wavelength is precisely controlled. In the aspect of material growth, on the basis of the existing MOCVD epitaxial growth technology, Further study on the growth process, from the analysis of growth conditions, the selection of growth materials to determine the growth plan, to prepare a high linear high power direct modulation performance of multiple quantum wells structure, to provide high quality epitaxial wafer. 5, in material and device structure, Using the simulation software of ALDS laser material and structure design, the optimization design of the performance of high linear high power direct modulation strain multiple quantum well laser is carried out, and the characteristic curve of threshold current is obtained. Finally, the 1310nm band (high frequency response covering the frequency range below 12GHz) is realized to simulate the high power (the output power of single channel chip is more than 10dBm) laser chip sample. The experimental results show that the designed laser chip has excellent threshold current, output power and other parameters.
【學位授予單位】：太原理工大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN248

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本文編號：1993756