本文選題：FDSOI + 超薄埋氧層　； 參考：《東北石油大學(xué)學(xué)報(bào)》2017年01期

【摘要】：隨著CMOS技術(shù)發(fā)展到22nm技術(shù)節(jié)點(diǎn)以下,體硅平面器件達(dá)到等比例縮小的極限。全耗盡超薄絕緣體上硅CMOS(FDSOI)技術(shù)具有優(yōu)秀的短溝道效應(yīng)控制能力,利用TCAD軟件,對不同埋氧層厚度的FDSOI器件短溝道效應(yīng)進(jìn)行數(shù)值仿真,研究減薄BOX厚度及器件背柵偏壓對器件性能和短溝道效應(yīng)的影響。仿真結(jié)果表明,減薄BOX厚度使FDSOI器件的性能和短溝道效應(yīng)大幅提升,薄BOX襯底背柵偏壓對FDSOI器件具有明顯的閾值電壓調(diào)制作用,6.00V的背柵偏壓變化產(chǎn)生0.73V的閾值電壓調(diào)制。在適當(dāng)?shù)谋硸牌珘合?FDSOI器件的短溝道特性(包括DIBL性能等)得到優(yōu)化。實(shí)驗(yàn)結(jié)果表明,25nm厚BOX的FDSOI器件比145nm厚BOX的FDSOI器件關(guān)斷電流減小近50%,DIBL減小近20%。
[Abstract]:With the development of CMOS technology below the 22nm technology node, the bulk silicon plane device reaches the limit of equal proportion reduction. Silicon CMOS FDSOI (silicon superthin insulator) technology has excellent control ability of short channel effect. The short channel effect of FDSOI devices with different buried oxygen layer thickness is numerically simulated by using TCAD software. The effects of thinning BOX thickness and back gate bias on device performance and short channel effect are studied. The simulation results show that the performance and short channel effect of FDSOI devices are greatly improved by thinning the thickness of BOX, and the threshold voltage modulation of FDSOI devices with thin BOX substrate backgate bias has obvious threshold voltage modulation effect of 6.00 V and a threshold voltage modulation of 0.73 V. The short channel characteristics (including DIBL performance) of FDSOI devices are optimized at a suitable backgate bias voltage. The experimental results show that the turn-off current of FDSOI device with 25nm thick BOX is nearly 50% lower than that of FDSOI device with 145nm thickness BOX.
【作者單位】： 中國科學(xué)院微電子研究所;微電子器件與集成技術(shù)重點(diǎn)實(shí)驗(yàn)室;
【基金】：國家科技重大專項(xiàng)(2013ZX02303-001-001)
【分類號(hào)】：TN386.1
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本文編號(hào)：1953882