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高速數(shù)字電路的微波擾亂及電磁防護(hù)

發(fā)布時(shí)間:2018-05-28 00:35

  本文選題:高功率微波 + 擾亂效應(yīng) ; 參考:《華北電力大學(xué)》2015年碩士論文


【摘要】:隨著現(xiàn)代電子技術(shù)的快速發(fā)展,高速數(shù)字電路系統(tǒng)設(shè)計(jì)已成為當(dāng)今電子設(shè)計(jì)的主流,復(fù)雜的電磁環(huán)境對(duì)高速、高密度和系統(tǒng)化的數(shù)字電路系統(tǒng)的影響日益顯著,導(dǎo)致電子系統(tǒng)和設(shè)備的正常工作受到擾亂、中斷、甚至敏感器件永久毀傷。為了避免上述情況,需要深入研究微波干擾信號(hào)對(duì)高速數(shù)字電路系統(tǒng)產(chǎn)生影響的過(guò)程、機(jī)制及防護(hù)。考慮到高速數(shù)字電路系統(tǒng)的復(fù)雜性,因此有必要對(duì)高速數(shù)字電路系統(tǒng)的基本電路單元進(jìn)行微波擾亂效應(yīng)的研究。本文以CMOS反相器為研究對(duì)象,首先根據(jù)電磁場(chǎng)耦合理論,建立了高功率(HPM)輻照下電磁干擾的等效源模型,設(shè)計(jì)了采用直接注入法注入微波干擾信號(hào)的阻抗匹配電路,進(jìn)而模擬了不同頻率、功率微波干擾對(duì)CMOS反相器的影響,總結(jié)了相應(yīng)的效應(yīng)規(guī)律,為研究復(fù)雜CMOS電路的效應(yīng)規(guī)律提供一定參考。其次,采用了一種基于負(fù)載特性的動(dòng)態(tài)參數(shù)新計(jì)算方法,計(jì)算了微波干擾下CMOS反相器的輸出電壓、輸出電流、功耗等關(guān)鍵動(dòng)態(tài)參數(shù)的變化,深刻揭示了微波干擾信號(hào)對(duì)CMOS反相器的影響機(jī)制。最后,搭律了電磁屏蔽材料的屏蔽效能測(cè)試系統(tǒng),更為真實(shí)的評(píng)價(jià)了兩種典型屏蔽材料的電磁屏蔽效能,該測(cè)試系統(tǒng)具有較強(qiáng)的操作性,對(duì)微波防護(hù)的研究具有一定的實(shí)用價(jià)值。本文對(duì)CMOS反相器微波擾亂效應(yīng)的模擬方法及基于負(fù)載特性的動(dòng)態(tài)參數(shù)計(jì)算,能夠準(zhǔn)確的分析微波干擾信號(hào)對(duì)數(shù)字電路的擾亂效應(yīng),并揭示其影響機(jī)制,可應(yīng)用于其它基本電路單元微波擾亂效應(yīng)的分析,為下一步研究復(fù)雜高速數(shù)字電路系統(tǒng)的微波擾亂效應(yīng)奠定基礎(chǔ)。
[Abstract]:With the rapid development of modern electronic technology, high-speed digital circuit system design has become the mainstream of electronic design. The complex electromagnetic environment has an increasingly significant impact on high-speed, high-density and systematic digital circuit systems. Causes the normal operation of electronic systems and equipment to be disturbed, interrupted, and even permanent damage sensitive devices. In order to avoid the above situation, it is necessary to study the process, mechanism and protection of microwave interference signal influence on high-speed digital circuit system. Considering the complexity of the high-speed digital circuit system, it is necessary to study the microwave disturbance effect of the basic circuit unit of the high-speed digital circuit system. In this paper, the CMOS inverter is taken as the research object. Firstly, according to the electromagnetic field coupling theory, the equivalent source model of electromagnetic interference under high power HPM irradiation is established, and the impedance matching circuit of the microwave interference signal injected by direct injection method is designed. The influence of different frequency and power microwave interference on CMOS inverter is simulated, and the corresponding effect law is summarized, which provides a certain reference for studying the effect law of complex CMOS circuit. Secondly, a new calculation method based on load characteristic is used to calculate the key dynamic parameters of CMOS inverter under microwave interference, such as output voltage, output current, power consumption and so on. The influence mechanism of microwave interference signal on CMOS inverter is revealed. Finally, the shielding effectiveness test system of electromagnetic shielding material is introduced, and the electromagnetic shielding effectiveness of two typical shielding materials is evaluated more truthfully. The test system has strong maneuverability. The study of microwave protection has certain practical value. In this paper, the simulation method of microwave disturbance effect of CMOS inverter and the calculation of dynamic parameters based on load characteristics can accurately analyze the disturbance effect of microwave interference signal to digital circuit and reveal its influence mechanism. It can be applied to the analysis of microwave disturbance effect in other basic circuit units, which lays a foundation for the further study of microwave disturbance effect in complex high-speed digital circuit systems.
【學(xué)位授予單位】:華北電力大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2015
【分類(lèi)號(hào)】:TN79

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