本文選題：基片集成波導(dǎo)(SIW) + 交叉耦合��； 參考：《中國礦業(yè)大學(xué)》2017年碩士論文

【摘要】：基片集成波導(dǎo)(Substrate Integrated Waveguide,SIW)是一種新型的導(dǎo)波結(jié)構(gòu),它結(jié)合了波導(dǎo)和微帶結(jié)構(gòu)的各自優(yōu)點,具有制造成本低、傳輸損耗小、功率容量大和易于與其它平面結(jié)構(gòu)集成等優(yōu)點。本文首先對微波濾波器的相關(guān)理論知識及其設(shè)計方法進行分析研究,介紹了交叉耦合濾波器的綜合方法,接著由傳統(tǒng)矩形波導(dǎo)引入SIW諧振腔,包括SIW的傳輸特性、腔體之間的耦合方式以及濾波器端口饋電方式。主要研究內(nèi)容如下:1)利用四分之一模SIW設(shè)計了刻蝕橢圓缺陷的四分之一模交叉耦合帶通濾波器,由于四分之一模技術(shù)的應(yīng)用以及橢圓缺陷結(jié)構(gòu)的引入,使得濾波器的尺寸減小了88%,并且在上阻帶產(chǎn)生一個傳輸零點(Transmission zero,TZ),大大地改善了選擇特性。2)提出了一種刻蝕π形槽線的感性窗結(jié)構(gòu),并將其應(yīng)用在圓形SIW諧振腔中。該結(jié)構(gòu)不僅增強了兩腔體之間的耦合強度而且保證了圓形SIW諧振腔的完整性。同時,S形槽線作為電耦合結(jié)構(gòu)首次應(yīng)用于圓形SIW濾波器中。綜合以上兩種新型結(jié)構(gòu),設(shè)計了三腔體圓形SIW交叉耦合帶通濾波器,在下阻帶出現(xiàn)一個TZ,然后又設(shè)計了四腔體圓形SIW交叉耦合帶通濾波器,在其上下阻帶分別產(chǎn)生一個TZ,TZ處的衰減均達到-40d B以下,極大地改善了濾波器的頻率選擇性能。3)對微帶貼片和SIW雙模結(jié)構(gòu)進行分析,提出了一種新型SIW雙層雙模諧振腔。該結(jié)構(gòu)是結(jié)合了微帶貼片和SIW結(jié)構(gòu)的雙模結(jié)構(gòu),比傳統(tǒng)的SIW結(jié)構(gòu)減小了50%以上。
[Abstract]:Substrate Integrated Waveguide (SIW) is a new type of guided wave structure. It combines the advantages of the waveguide and microstrip structure. It has the advantages of low manufacturing cost, small transmission loss, high power capacity and easy to integrate with other planar structures. The method is analyzed and studied. The synthesis method of cross coupling filter is introduced. Then the SIW resonator is introduced into the traditional rectangular waveguide, including the transmission characteristics of SIW, the coupling mode between the cavities and the feed mode of the filter port. The main contents are as follows: 1) the 1/4 mode intersection of the etching ellipse defect is designed by using the 1/4 mode SIW. Due to the application of 1/4 mode technology and the introduction of the elliptical defect structure, the size of the filter is reduced by 88%, and a transmission zero point (Transmission zero, TZ) is produced in the upper stopband, and the selection characteristic.2 is greatly improved. In a circular SIW resonator, the structure not only enhances the coupling strength between the two cavities, but also ensures the integrity of the circular SIW resonator. At the same time, the S shaped slot line is applied to the circular SIW filter as an electric coupling structure for the first time. The three cavity circular SIW cross coupling bandpass filters are designed for the above two new structures. We present a TZ, and then design a four cavity round SIW cross coupling bandpass filter, which produces a TZ in its upper and lower hindrance. The attenuation at TZ is all below -40d B. The frequency selection performance of the filter is greatly improved. The structure of the microstrip patch and SIW double mode is analyzed, and a new type of SIW double mode double mode resonator is proposed. The structure is a dual mode structure which combines microstrip patch and SIW structure, which is reduced by more than 50% over the traditional SIW structure.
【學(xué)位授予單位】：中國礦業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN713

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本文編號：1940773