本文選題：金屬硒化物 + 硒化鉍��； 參考：《電子科技大學(xué)》2015年碩士論文

【摘要】：硒化物層狀材料具有獨(dú)特的光學(xué)、電學(xué)特性,在薄膜太陽(yáng)電池、熱電器件等領(lǐng)域具有良好的應(yīng)用前景,已引起學(xué)術(shù)和產(chǎn)業(yè)界的高度重視。本文研究了Bi2Se3(V-VI族)和In2Se3(III-VI族)為代表的硒化物的性質(zhì)、制備方法及其應(yīng)用。分別從硒化物層狀材料的刻蝕以及材料的光學(xué)電學(xué)性能來(lái)探討了硒化物層狀材料的特性和發(fā)展。研究在Si(111)襯底上采用物理氣相沉積(PVD)制備出單晶的Bi2Se3薄膜和分子束外延(MBE)的方法制備出單晶的In2Se3薄膜,重點(diǎn)研究了Bi2Se3材料的濕法刻蝕和單相In2Se3的光學(xué)特性。具體研究?jī)?nèi)容和結(jié)論如下:(1)研究了K2Cr2O7-H2SO4和K2Cr2O7-HCl兩種不同刻蝕液對(duì)Bi2Se3薄膜的刻蝕作用效果和反應(yīng)機(jī)理。雖然兩種刻蝕液對(duì)Bi2Se3薄膜的刻蝕都有效果,但刻蝕出來(lái)的界面還是有很大的差別。H+濃度為12 mol/L的K2Cr2O7-H2SO4刻蝕液,刻蝕30秒后的界面存在許多大的直徑在20 nm~300 nm之間的島狀物,而且其界面的粗糙度要高于K2Cr2O7-HCl刻蝕后的界面,這不能算是好的刻蝕界面;而H+濃度為8 mol/L的K2Cr2O7-HCl刻蝕液刻蝕30秒的界面平整光滑,雖然刻蝕之后的界面是一個(gè)富Bi的界面,但其橫向刻蝕性能良好。它們的刻蝕速率在室溫下均為120 nm/min。上述工作第一次系統(tǒng)的研究了Bi2Se3層狀材料的刻蝕,為Bi2Se3硒化物薄膜在熱電器件制備領(lǐng)域中的應(yīng)用提供了參考。(2)研究了In2Se3薄膜的可控生長(zhǎng)和基于In2Se3薄膜的光電器件的變溫I-V特性和光電轉(zhuǎn)換效率。我們過(guò)控制In2Se3薄膜生長(zhǎng)的襯底溫度,成功制備除了α-In2Se3單晶薄并利用XRD和SEM觀測(cè)了其形貌;利用α-In2Se3單晶薄膜制備出了太陽(yáng)能電池結(jié)構(gòu),并對(duì)該器件進(jìn)行了外量子轉(zhuǎn)換效率(EQE)的測(cè)量,盡管我們制作的太陽(yáng)能器件沒(méi)有做任何的抗反射圖層或者吸收窗口,器件在可見(jiàn)光波段530 nm到880nm的范圍內(nèi),EQE的值超過(guò)20%,而且它的光響應(yīng)下降邊緣達(dá)到880 nm。器件的面積為0.2 cm2,在1個(gè)標(biāo)準(zhǔn)太陽(yáng)光強(qiáng)照射下(100 mW cm-2),器件的短路光電流密度(JSC),開(kāi)路電壓(VOC)和占空因數(shù)(ff)的值分別為:JSC=9.6 mA cm-2,VOC=247 mV and ff=32.3%,單位面積的光電轉(zhuǎn)換效率達(dá)到了0.77%。結(jié)果表明,利用MBE技術(shù)制備的In2Se3-Si光電池達(dá)到了比較高的光電轉(zhuǎn)化效率,同時(shí)表明了In2Se3薄膜在光電領(lǐng)域中具有巨大的發(fā)展?jié)摿α己玫膽?yīng)用前景。
[Abstract]:Because of its unique optical and electrical properties, selenide layered materials have a good application prospect in thin film solar cells, thermoelectric devices and so on, and have attracted great attention in academic and industry fields. In this paper, the properties, preparation methods and applications of selenides represented by Bi2Se3(V-VI family and In2Se3(III-VI family are studied. The properties and development of selenide layered materials were discussed from the etching of selenide layered materials and the optical electrical properties of the materials. Single crystal Bi2Se3 thin films and MBE thin films were prepared by physical Vapor deposition (PVD) on Si (111) substrates. The wet etching of Bi2Se3 materials and the optical properties of single-phase In2Se3 were studied. The specific contents and conclusions are as follows: (1) the etching effect and reaction mechanism of K2Cr2O7-H2SO4 and K2Cr2O7-HCl on Bi2Se3 thin films have been studied. Although the two kinds of etching solution have good effect on the etching of Bi2Se3 film, there is a great difference in the interface between the two kinds of etching solution. H concentration is 12 mol/L K2Cr2O7-H2SO4 etching solution. After 30 seconds of etching, there are many islands with large diameter between 20 nm~300 nm and 20 nm~300 nm at the interface. Moreover, the roughness of the interface is higher than that of the interface after K2Cr2O7-HCl etching, which is not a good etching interface, while the interface of K2Cr2O7-HCl etching solution with H concentration of 8 mol/L is smooth and smooth for 30 seconds, although the interface after etching is a Bi rich interface. But its transverse etching performance is good. Their etching rates are 120 nm / min at room temperature. For the first time, the etching of Bi2Se3 layered materials has been studied systematically. The controllable growth of Bi2Se3 thin films and the variable temperature I-V characteristics and photoelectric conversion efficiency of In2Se3 thin film based optoelectronic devices were studied. We have successfully prepared 偽 -In2Se3 single crystal thin films by controlling the substrate temperature of In2Se3 thin films and observed the morphology of 偽 -In2Se3 single crystal thin films by XRD and SEM, and prepared solar cell structure by 偽 -In2Se3 single crystal thin films. The external quantum conversion efficiency (EQE) has also been measured, even though the solar devices we have made do not have any anti-reflection layers or absorption windows. The EQE of the device is more than 20 in the range from 530nm to 880nm in the visible light band, and the decreasing edge of its optical response is up to 880nm. The area of the device is 0.2 cm ~ (-2). The short circuit photocurrent density (JSCC), open circuit voltage (VOC) and duty factor (f) of the device are respectively: 9. 6 mA ~ (- 2) m ~ (-2) VOC ~ (2) V and ff32. 3 ~ 3. The photoelectric conversion efficiency per unit area of the device is 0. 777mW / cm ~ (-2) and 0. 777mV / cm ~ (-2), respectively. The results show that the In2Se3-Si photocell fabricated by MBE technology has achieved high photoelectric conversion efficiency, and it also shows that In2Se3 thin films have great development potential in the field of optoelectronic applications.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304

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