本文選題：高功率微波 + 雙同軸環(huán)狀陰極�。� 參考：《國防科學技術大學》2015年碩士論文

【摘要】：目前,具有高束波轉(zhuǎn)換效率的高功率微波(HPM)源一般具有較高阻抗,要進一步提高HPM源的單管輸出功率不僅要降低器件阻抗并提高功率容量,還要保證工作電流低于空間極限電流。基于以上考慮,該論文提出并研究了X波段自相干高功率微波源,其特點是能夠在一個微波源中同時輸出兩路鎖頻鎖相的高功率微波。該微波源采用了雙同軸環(huán)狀陰極,能夠同時發(fā)射內(nèi)外兩束同軸環(huán)狀電子束,同時驅(qū)動內(nèi)外兩個子高功率微波源。其優(yōu)點在于不僅能夠降低整體器件阻抗、提高注入電功率的,又能夠使每個子微波源工作在高阻抗狀態(tài),保證其工作電流不會超過空間極限電流的限制,有利于提高束波轉(zhuǎn)換效率。此外,由于該微波源包含了兩個子微波源,其功率容量也相應得到了較大提升。綜上所述,該新型器件有望在單管內(nèi)實現(xiàn)更高的功率輸出。X波段自相干高功率的內(nèi)外子微波源分別采用多波切倫科夫振蕩器(MWCG)和三同軸速調(diào)管放大器(TKA)。其整體工作過程如下:內(nèi)子微波源產(chǎn)生的部分微波通過二極管區(qū)泄漏進入外子微波源,作為其注入信號,外子微波源會將該注入信號放大,與內(nèi)子微波源一起產(chǎn)生兩路鎖頻鎖相的高功率微波,而后由功率合成結(jié)構(gòu)合成輸出。由于這兩路相干合成的微波實際上是在一個微波源中產(chǎn)生,因此該新型微波源稱為自相干高功率微波源。論文主要研究內(nèi)容和結(jié)論如下:首先,對內(nèi)外子微波源分別進行了單獨設計與模擬分析。粒子模擬結(jié)果顯示,MWCG在二極管電壓687 kV時,輸出微波的平均功率為1.15 GW,輸出頻率9.68GHz,功率效率22.8%;TKA在二極管電壓650 kV時,輸出微波的平均功率為1.58GW,輸出頻率為9.68 GHz,功率效率21%,增益22.4 dB。然后,將內(nèi)外子微波源相結(jié)合,并對自相干高功率微波源整體進行了粒子模擬研究。在二極管電壓687 kV時,內(nèi)外子微波源輸出微波的平均功率分別為1.20 GW和2.58 GW,頻率均為9.72 GHz,功率效率分別為28%和30%,器件整體阻抗36Ω。此外,內(nèi)外子微波源在30 ns內(nèi)實現(xiàn)鎖頻鎖相,鎖相后頻率差波動小于±6 MHz,相位差波動小于±5°,鎖相時間超過70 ns。最后,對兩路鎖頻鎖相微波進行相干功率合成研究。自相干高功率微波源合成后平均輸出功率3.59 GW,頻率9.72 GHz,整體功率效率28%。
[Abstract]:At present, the high power microwave (HPM) source with high beam conversion efficiency generally has high impedance. To further improve the single transistor output power of HPM source, it is necessary not only to reduce the device impedance but also to increase the power capacity. Also ensure that the operating current is below the space limit current. Based on the above considerations, an X-band self-coherent high-power microwave source is proposed and studied in this paper. Its characteristic is that it can output two channels of phase-locked high-power microwave simultaneously in a single microwave source. This microwave source adopts a double coaxial ring cathode, which can simultaneously emit two internal and external coaxial ring electron beams, and drive two internal and external high power microwave sources at the same time. The advantages lie in the fact that it can not only reduce the impedance of the whole device and increase the injected electric power, but also make each microwave source operate in a high impedance state, so as to ensure that the working current does not exceed the limit of the space limit current. It is beneficial to improve the efficiency of beam wave conversion. In addition, because the microwave source contains two sub-microwave sources, its power capacity is also greatly improved. In conclusion, the new device is expected to achieve higher power output. X-band self-coherent high power internal and external microwave sources using multi-wave Cherenkov oscillator MWCGs and three-axis klystron amplifier TKAN. The whole working process is as follows: part of the microwave produced by the inner microwave source leaks through the diode region into the exon microwave source, which amplifies the injection signal as its injection signal. Two channels of high power microwave with frequency locked phase are generated together with the inner microwave source, and then the output is synthesized by the power synthesis structure. Because the two channels of coherent microwave are actually generated in a microwave source, the new microwave source is called self-coherent high-power microwave source. The main research contents and conclusions are as follows: firstly, the internal and external microwave sources are designed and simulated separately. The particle simulation results show that the average microwave power of MWCG is 1.15 GW, the output frequency is 9.68 GHz, and the power efficiency is 22.8T KA when the diode voltage is 650 kV, when the diode voltage is 687 kV, the average microwave output power is 1.15 GW, and the output frequency is 9.68 GHz. The average power of microwave output is 1.58 GW, the output frequency is 9.68 GHz, the power efficiency is 21 and the gain is 22.4 dB. Then, the particle simulation of self-coherent high power microwave source is carried out by combining the internal and external sub-microwave sources. When the diode voltage is 687 kV, the average microwave power of the internal and external microwave source is 1.20 GW and 2.58 GW respectively, the frequency is 9.72 GHz, the power efficiency is 28% and 30%, and the overall impedance of the device is 36 惟. In addition, the internal and external microwave source realizes the frequency locked phase locking within 30 ns. The frequency difference fluctuation is less than 鹵6 MHz, the phase difference fluctuation is less than 鹵5 擄, and the phase locking time is more than 70 ns. Finally, the coherent power combination of two frequency locked phase-locked microwave is studied. The average output power is 3.59 GW, the frequency is 9.72 GHz, and the overall power efficiency is 28 GW.
【學位授予單位】：國防科學技術大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN015

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