本文選題：SiCN + 磁控濺射��； 參考：《西北大學(xué)》2017年碩士論文

【摘要】：硅碳氮(SiCN)是一種硅、碳、氮三元化合物半導(dǎo)體材料,兼具碳化硅和氮化硅兩種材料優(yōu)良的光學(xué)、電學(xué)、磁學(xué)、熱力學(xué)和機(jī)械特性。在硅材料襯底上生長(zhǎng)SiCN薄膜材料成本低,且與超大規(guī)模集成電路有很好的兼容性,這些特點(diǎn)使得SiCN可作為光電器件的首選材料之一,具有很好的經(jīng)濟(jì)和社會(huì)效益。本論文采用射頻磁控濺射法,以氮化硅和石墨靶材作為原材料,氬氣作為工作氣體,成功制備出了 SiCN薄膜材料。通過(guò)改變靶材(氮化硅、石墨)濺射功率、襯底溫度和反應(yīng)腔室壓強(qiáng)等制備條件,利用相應(yīng)測(cè)試手段分析研究了制備工藝條件對(duì)SiCN薄膜在組分、結(jié)構(gòu)、形貌、光學(xué)性能和場(chǎng)發(fā)射性能等方面的影響。另外,我們進(jìn)一步探索性地研究了退火對(duì)SiCN薄膜的影響。結(jié)果表明,在不同工藝條件下所制備的SiCN薄膜主要是由Si、N、C三種元素組成,元素以Si-N鍵、Si-C鍵、C-N鍵、C=N鍵、C≡N鍵和C=C鍵存在,薄膜材料中含Si3N4、5H-SiC相。不同的制備工藝條件對(duì)各元素含量和結(jié)晶性都有很大的影響。通過(guò)改變靶材濺射功率,我們發(fā)現(xiàn)所制備SiCN薄膜材料光學(xué)帶隙隨著靶材濺射功率的增大而增大,通過(guò)計(jì)算可得其光學(xué)帶隙介于4.55和4.89 eV之間,且薄膜有很好的光透過(guò)性;隨著襯底溫度從400℃升高到700℃,所制備SiCN薄膜的光學(xué)帶隙從4.20 eV減小到3.73 eV;腔室壓強(qiáng)從3 Pa增大至9 Pa時(shí),所制備SiCN薄膜的光學(xué)帶隙從3.06 eV增大到5.14 eV。光致熒光測(cè)試結(jié)果表明所制備SiCN薄膜有兩個(gè)分別位于370和425nm處的發(fā)光峰,分別由SiOx/Si(0x≤2)界面態(tài)和SiC晶粒引起,發(fā)光峰的強(qiáng)度隨制備條件的不同而有很大的差別。薄膜的場(chǎng)發(fā)射測(cè)試表明,薄膜的場(chǎng)發(fā)射開(kāi)啟電場(chǎng)隨靶材濺射功率的不同有較大的變化,所制備薄膜的最小開(kāi)啟電場(chǎng)為2.4 V/μm。
[Abstract]:Silicon carbon nitride (sic) is a kind of silicon, carbon, nitrogen ternary compound semiconductor material, which has excellent optical, electrical, magnetic, thermodynamic and mechanical properties of both silicon carbide and silicon nitride. SiCN thin films grown on silicon substrates have low cost and good compatibility with VLSI. These characteristics make SiCN as one of the preferred materials for optoelectronic devices with good economic and social benefits. In this paper, SiCN thin films were successfully prepared by RF magnetron sputtering, using silicon nitride and graphite targets as raw materials and argon as working gas. By changing the sputtering power of target (silicon nitride, graphite), substrate temperature and pressure of reaction chamber, the effects of preparation conditions on the composition, structure and morphology of SiCN thin films were studied by means of measurement. The effects of optical properties and field emission properties. In addition, we investigated the effect of annealing on SiCN films. The results show that the SiCN thin films prepared under different processing conditions are mainly composed of three elements, Si-Na-C, Si-C, C-N, C-N and C3N4- 5H-SiC, and the Si _ 3N _ 4 and 5H-SiC phases are found in the films. Different preparation conditions have great influence on the content and crystallinity of each element. By changing the sputtering power of the target, we found that the optical band gap of the SiCN thin film increases with the increase of the target sputtering power. The optical band gap is between 4.55 and 4.89 EV, and the film has good optical transmittance. With the increase of substrate temperature from 400 鈩，

本文編號(hào)：1935048