本文選題：過驅(qū)動技術(shù) + 像素級��； 參考：《中國科學(xué)院研究生院(上海技術(shù)物理研究所)》2015年碩士論文

【摘要】：電阻陣微輻射體電阻的熱響應(yīng)時間是制約電阻陣幀頻的主要因素之一,為提高微輻射體電阻熱響應(yīng)時間,引入過驅(qū)動技術(shù)。為節(jié)省系統(tǒng)開支和成本,本文提出在像素單元實現(xiàn)過驅(qū)動的方式,并對該方式進(jìn)行了驗證。本文的起始對國內(nèi)外電阻陣過驅(qū)動技術(shù)進(jìn)行了調(diào)研,提出了一種節(jié)省系統(tǒng)成本,在像素單元實現(xiàn)過驅(qū)動技術(shù)的方式,該方式采用開環(huán)的控制方式。對微輻射體電阻的熱平衡方程進(jìn)行分析,推導(dǎo)出微輻射體電阻過驅(qū)動技術(shù)的理論表達(dá)式。建立了微輻射體電阻熱響應(yīng)時間和微輻射體外部驅(qū)動功率之間的關(guān)系,為研究像素單元過驅(qū)動技術(shù)提供了理論依據(jù)。為進(jìn)一步的研究像素單元過驅(qū)動技術(shù),提出了施加在微輻射體電阻外部熱驅(qū)動的波形要求,過驅(qū)動因子Kod的選值以及像素單元面積的限制對電路設(shè)計要求。隨后,按照要求設(shè)計了應(yīng)用于研究像素單元過驅(qū)動技術(shù)的電路結(jié)構(gòu)。對電路結(jié)構(gòu)設(shè)計進(jìn)行了詳細(xì)的參數(shù)設(shè)計,仿真和版圖設(shè)計,選用CSMC 0.5μm工藝對電路進(jìn)行流片。最后搭建了用于測試電路功能的系統(tǒng),對應(yīng)用于研究像素單元過驅(qū)動技術(shù)的電路設(shè)計進(jìn)行了驗證。最后,搭建了測試像素單元過驅(qū)動技術(shù)的系統(tǒng),分析了驗證過驅(qū)動技術(shù)的方法,并對應(yīng)用于測試的Ti NX材料的微輻射體電阻進(jìn)行了溫度特性的測量,隨后對像素單元過驅(qū)動技術(shù)進(jìn)行了測試,對測試結(jié)果表現(xiàn)出的誤差進(jìn)行了誤差分析,并提出改進(jìn)測試的方案。隨著文章的結(jié)束,文章末尾對像素單元過驅(qū)動技術(shù)的應(yīng)用進(jìn)行了展望。
[Abstract]:The thermal response time of resistor array micro-radiator resistor is one of the main factors that restrict the frame frequency of resistor array. In order to improve the thermal response time of micro-radiator resistor, overdrive technology is introduced. In order to save system expenses and cost, this paper proposes an overdrive mode in pixel unit and verifies the method. At the beginning of this paper, the overdrive technology of resistive array at home and abroad is investigated, and a way of realizing over-drive technology in pixel unit is put forward, which adopts open-loop control mode. The heat balance equation of micro-radiator resistor is analyzed and the theoretical expression of over-drive technique of micro-radiator resistor is deduced. The relationship between the thermal response time of micro-radiator resistor and the external driving power of micro-radiator is established, which provides a theoretical basis for the study of pixel over-drive technology. In order to further study the over-drive technology of pixel unit, the waveform requirement applied to the external thermal drive of micro-radiator resistor, the selection value of over-drive factor Kod and the limitation of pixel cell area on the circuit design are proposed. Then, according to the requirements, the circuit structure is designed to study the pixel unit overdrive technology. Detailed parameter design, simulation and layout design are carried out for the circuit structure design. CSMC 0.5 渭 m process is used to carry out the circuit chip. Finally, a system is built to test the function of the circuit, and the design of the circuit applied to the research of the pixel unit overdrive technology is verified. Finally, a system for testing the over-drive technology of pixel unit is built, and the method to verify the over-drive technique is analyzed, and the temperature characteristics of the micro-radiator resistor of the Ti NX material used in the test are measured. Then, the pixel unit overdrive technology is tested, the error of the test result is analyzed, and the scheme of improving the test is put forward. With the end of the article, the application of the pixel unit overdrive technology is prospected at the end of the article.
【學(xué)位授予單位】：中國科學(xué)院研究生院(上海技術(shù)物理研究所)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN219

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本文編號：1934984