本文選題：微系統(tǒng) + 三維鋁封裝　； 參考：《電子元件與材料》2016年12期

【摘要】：針對(duì)微系統(tǒng)高可靠集成需求,提出了一種三維鋁封裝集成微系統(tǒng)多功能器件的結(jié)構(gòu)和方法。通過鋁基板選擇性穿透陽極氧化試驗(yàn)、低應(yīng)力低空洞灌封試驗(yàn)和激光側(cè)邊電路刻蝕試驗(yàn),實(shí)現(xiàn)了32 G固態(tài)存儲(chǔ)器集成。研究結(jié)果表明,通過致密性氧化可實(shí)現(xiàn)內(nèi)埋布線氧化終點(diǎn)的控制,采用階梯式固化可降低灌封應(yīng)力,優(yōu)化的激光參數(shù)可獲得側(cè)邊電路互連。首批試制固態(tài)存儲(chǔ)器讀寫性成品率達(dá)73%,與同類3D-plus存儲(chǔ)器相比,體積減少約55%,質(zhì)量減輕約40%。
[Abstract]:In order to meet the requirement of high reliability integration of microsystems, this paper presents a structure and method of multifunctional devices for integrated microsystems with three dimensional aluminum packaging. Through selective anodic oxidation test of aluminum substrate, low stress and low cavity filling test and laser side circuit etching test, 32G solid state memory integration is realized. The results show that the end point of buried wiring oxidation can be controlled by densification oxidation, the filling stress can be reduced by step solidification, and the side circuit interconnection can be obtained by optimizing laser parameters. Compared with the similar 3D-plus memory, the volume and quality of the first batch of solid state memory reader-write finished products are reduced by 55 and 40 parts respectively.
【作者單位】： 上海航天電子通訊設(shè)備研究所;
【基金】：國家科技重大專項(xiàng)項(xiàng)目(課題級(jí))(No.2014ZX02501016)
【分類號(hào)】：TN405

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