本文選題：TD-LTE + GaN功率放大管��； 參考：《中國科學院大學(中國科學院工程管理與信息技術學院)》2017年碩士論文

【摘要】：近年來,隨著通信行業(yè)的迅猛發(fā)展,多載波、寬頻帶、高數(shù)據(jù)已經成為移動通信發(fā)展的重要標志。目前,4.5G將在現(xiàn)有網(wǎng)絡B41頻段部署,B42頻段則被看好是開發(fā)第五代移動通信低頻段的重要頻譜資源,而開發(fā)B41、B42頻段的無線產品必然需要相應頻段的射頻放大單元。本文將設計和實現(xiàn)一種用于B41、B42頻段微功率基站的雙頻功率放大器,而其中的功放電路也可直接應用于B41頻段與B42頻段5瓦輸出功率的基站設備中,其優(yōu)異的寬帶性能可支持100MHz寬帶信號7瓦輸出功率能力。本文中,作者完成的主要工作如下:(1)完成B41、B42雙頻微功率基站功放板設計與開發(fā)。通過需求分析,本文以CREE公司的GaN(氮化鎵)功放管CGHV27015S和CGHV27030S為核心器件來設計實現(xiàn)�；贒oherty基本理論設計1:2非對稱Doherty電路;實現(xiàn)飽和輸出功率大于46dBm,額定輸出功率下效率大于40%,擁有5載波20LTE寬帶信號放大能力,通過數(shù)字預失真校正,ACLR滿足-48dBc指標,電路總增益大于40dB,帶內平坦度小于2.5dB,開關時間小于3μs。(2)完成CGHV27015S和CGHV27030S組成的非對稱Doherty電路設計與仿真。首先通過ADS分別對兩個器件進行單獨的電路仿真,然后基于寬帶合路器基本理論設計仿真合路器部分電路,最后做兩個器件電路與合路器的聯(lián)合仿真,完成本課題核心電路仿真工作。(3)完成了單板功能與性能測試,符合總體設計要求,并應用于整機產品中。本設計基于氮化鎵功放管實現(xiàn)了B41、B42頻段的高效率多載波射頻功率放大器。此放大器滿足工作在相應頻段的LTE多載波聚合、256QAM、輸出功率為7W的設備要求,同時也可應用到將來此頻段4.5G與將來的5G有源天線陣列中,從而滿足未來移動通信市場對通信設備更高速率和可靠性的需求。
[Abstract]:In recent years, with the rapid development of the communication industry, multi-carrier, broadband, high-data has become an important symbol of the development of mobile communications. At present, it is expected that 4.5G will be deployed in the B41 band of the existing network. It is an important spectrum resource to develop the low frequency band of the fifth generation mobile communication. However, the development of the B41 / B42 wireless product will inevitably require the RF amplification unit in the corresponding frequency band. In this paper, a dual-frequency power amplifier is designed and implemented for the B41 / B42 micropower base station, and the power amplifier circuit can also be directly used in the B41 band and the B42 band 5-watt output base station equipment. Its excellent wideband performance can support 100MHz wideband signal 7 W output power capacity. In this paper, the main work accomplished by the author is as follows: 1) the design and development of the power amplifier board of the B41 / B42 dual-frequency micro-power base station. Based on the requirement analysis, the CGHV27015S and CGHV27030S of gan (gan) power amplifier made by CREE are designed and implemented in this paper. Based on the basic theory of Doherty, the 1:2 asymmetric Doherty circuit is designed, the saturation output power is greater than 46dBm, the efficiency under rated output power is more than 40, and the amplification ability of 5-carrier 20LTE wideband signal is obtained. The ACLR can satisfy the -48dBc index through digital predistortion correction. The total gain of the circuit is more than 40 dB, the in-band flatness is less than 2.5 dB, and the switching time is less than 3 渭 s. 2) the asymmetric Doherty circuit composed of CGHV27015S and CGHV27030S is designed and simulated. At first, two devices are simulated separately by ADS, then some circuits of combiner are designed based on the basic theory of wideband combiner. Finally, the combined simulation of two device circuits and combiner is done. The function and performance of the single board are tested, which meets the overall design requirements and is applied to the whole machine product. A high efficiency multi-carrier RF power amplifier is designed based on gallium nitride power amplifier (Gallium nitride) in B41 / B42 band. The amplifier can meet the requirements of 256QAM and 7W of LTE multicarrier polymeric antenna operating in the corresponding frequency band. It can also be used in the future 4.5G and 5G active antenna arrays in the future. In order to meet the needs of the future mobile communication market for higher speed and reliability of communication equipment.
【學位授予單位】：中國科學院大學(中國科學院工程管理與信息技術學院)
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN722.75

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