本文選題：多物理場計算 + 功率半導(dǎo)體器件��； 參考：《華北電力大學(xué)》2015年碩士論文

【摘要】：功率半導(dǎo)體器件是進行電能(功率)處理的半導(dǎo)體產(chǎn)品,是弱電控制與強電運行間的橋梁。隨著綠色環(huán)保意識在國際間的確立與推進,功率半導(dǎo)體的應(yīng)用范圍己從傳統(tǒng)的工業(yè)控制和4C產(chǎn)業(yè)(計算機、通信、消費類電子產(chǎn)品和汽車),擴展到新能源(風(fēng)電、太陽能)、軌道交通、智能電網(wǎng)等新領(lǐng)域。隨著對功率器件需求的不斷擴大,對功率器件的失效分析和可靠性研究需要更加深入和廣泛的研究。在功率半導(dǎo)體器件知識的基礎(chǔ)上,并且結(jié)合對于PT-IGBT的認識,本文從固態(tài)半導(dǎo)體載流子運動的理論出發(fā),借助外文文獻中關(guān)于Si半導(dǎo)體材料特性的實驗數(shù)據(jù)結(jié)果提出合理失效機理假設(shè)。主要工作包括對外文文獻中的材料參數(shù)的數(shù)據(jù)處理選擇合理的遷移率模型；通過多物理場建模仿真雙極型晶體管BJT及單極型器件MOSFET的導(dǎo)通伏安特性曲線,幫助分析PT-IGBT在導(dǎo)通狀態(tài)下的溫度特性；對PT-IGBT的多元胞并聯(lián)可能發(fā)生的失效機理進行驗證和闡述；建立IGBT動態(tài)關(guān)斷瞬時失效模型,仿真有源區(qū)內(nèi)部材料參數(shù)變化缺陷對擊穿電壓閾值的影響。以上為基礎(chǔ)分析IGBT從導(dǎo)通到關(guān)斷時可能出現(xiàn)的失效機理,提出IGBT使用過程中應(yīng)注意不超過di/dt和du/dt耐量,最后總結(jié)歸納功率半導(dǎo)體器件的常見失效模式。
[Abstract]:Power semiconductor devices are semiconductor products for power (power) processing and a bridge between weak current control and strong power operation. With the establishment and promotion of green environmental awareness in the international community, the application of power semiconductors has expanded from traditional industrial control and 4C industries (computers, communications, consumer electronics and automotive products) to new sources of energy (wind power, wind power). Solar energy, rail transit, smart grid and other new areas. With the increasing demand for power devices, the research on failure analysis and reliability of power devices needs more in-depth and extensive research. Based on the knowledge of power semiconductor devices and the understanding of PT-IGBT, this paper starts from the theory of solid state semiconductor carrier motion. Based on the experimental data of Si semiconductor material in foreign literature, the hypothesis of reasonable failure mechanism is put forward. The main work includes selecting a reasonable mobility model for data processing of material parameters in foreign literature, simulating the on-volt-ampere characteristic curves of bipolar transistor BJT and unipolar device MOSFET by multi-physical field modeling. It helps to analyze the temperature characteristics of PT-IGBT in the state of conduction, to verify and explain the failure mechanism of PT-IGBT in parallel, and to establish a dynamic turn-off transient failure model of IGBT. The influence of material parameter variation on breakdown voltage threshold in active region is simulated. Based on the above analysis, the possible failure mechanism of IGBT from conduction to turn-off is analyzed, and it is proposed that attention should be paid to not exceeding the di/dt and du/dt tolerance in the use of IGBT. Finally, the common failure modes of power semiconductor devices are summarized.
【學(xué)位授予單位】：華北電力大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN303

【引證文獻】

相關(guān)會議論文 前1條

1 吳安平;;第三次工業(yè)革命背景下對智能電網(wǎng)的再認識[A];2013年中國電機工程學(xué)會年會論文集[C];2013年

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本文編號：1933027