高效率逆F類Doherty射頻功率放大器研究
本文選題:Doherty功率放大器 + 逆F類。 參考:《寧波大學》2015年碩士論文
【摘要】:功率放大器作為發(fā)射機系統(tǒng)的重要組成,其性能直接決定了發(fā)射機輸出信號的質量與傳輸距離。同時,功率放大器也是通信系統(tǒng)中能耗最高的單元,其高效性設計不僅可以減少電力消耗,而且能夠降低系統(tǒng)對散熱裝置及電源的設計要求,提高系統(tǒng)工作的穩(wěn)定性。LTE系統(tǒng)通過采用OFDM技術,在顯著提高數據傳輸速率和頻譜利用率的同時,也導致信號具有很高的峰均比(PAPR)。如何實現(xiàn)對高峰均比信號的高效線性放大,成為了4G系統(tǒng)中功放設計的關鍵技術。本文重點圍繞逆F類Doherty功放的效率增強問題展開研究,主要工作包括以下4部分:(一):對功放的主要性能指標進行了綜述,根據射頻放大器設計中對增益、功率和噪聲系數三個不同的性能需求,對應分析了雙共軛匹配、功率匹配和噪聲匹配三種不同的設計原則。(二):主要圍繞Doherty結構的高效率回退性能展開研究。根據有源負載牽引理論,分析了Doherty結構中兩路功放在不同工作狀態(tài)下輸出電壓與電流、負載阻抗及效率等參數的變化,給出整體效率回退曲線,肯定了Doherty結構對高峰均比信號的處理能力。(三):主要圍繞F類/逆F類、逆F類Doherty功放的效率增強技術展開研究。首先,介紹了F類/逆F類功放的工作原理,討論了晶體管寄生參數對其開關性能的影響。接著,給出了幾種包含寄生參數補償的逆F類輸出端諧波抑制網絡結構,并對各結構進行了理論分析與參數計算。最后,將逆F類功放與Doherty結構進行了有機結合,提出了一種高效率的逆F類Doherty功放結構,對其工作過程中兩路功放的基波和諧波阻抗的變化進行了分析,并對載波功放和峰值功放補償線的作用和長度選取進行了詳細的研究。(四):完成了高效率逆F類Doherty功放的仿真設計、PCB的制作與調試及數字預失真線性化等工作。單音測試結果顯示,在930MHz處,功放回退7.5d B時漏極效率仍高達64.2%。910-950MHz頻帶內,功放回退8d B時漏極效率均保持在50%以上,輸出功率均大于42.5d Bm。選用3載波WCDMA信號作為測試信號,經數字預失真線性化后,輸出信號的上下邊帶ACPR分別為-35.39d Bc和-35.9d Bc。
[Abstract]:Power amplifier as an important component of transmitter system, its performance directly determines the quality of transmitter output signal and transmission distance. At the same time, the power amplifier is also the unit with the highest energy consumption in the communication system. Its high efficiency design can not only reduce the power consumption, but also reduce the design requirements of the heat dissipation device and the power supply. To improve the stability of the system. By using OFDM technology, the data transmission rate and spectral efficiency are significantly improved, and the signal has a high peak to average ratio (PAPR). How to realize efficient linear amplification of peak-to-average ratio (APR) signals has become a key technology in the design of power amplifier in 4G systems. This paper focuses on the efficiency enhancement of inverse F-type Doherty amplifier. The main work includes the following four parts: (1) the main performance indexes of the amplifier are summarized, according to the gain of RF amplifier design, There are three different performance requirements for power and noise coefficient. Three different design principles are analyzed: double conjugate matching, power matching and noise matching. (II) study on the high efficiency fallback performance of Doherty structure. According to the active load traction theory, the variation of output voltage and current, load impedance and efficiency of two power amplifiers in Doherty structure under different working conditions are analyzed, and the overall efficiency regression curve is given. The processing ability of Doherty structure to peak-to-average ratio (PAPR) signal is confirmed. (III) study on efficiency enhancement of F / inverse F, inverse F Doherty power amplifiers. Firstly, the working principle of class F / inverse F power amplifier is introduced, and the effect of transistor parasitic parameters on its switching performance is discussed. Then, several kinds of inverse F-output harmonic suppression network structure including parasitic parameter compensation are given, and the theoretical analysis and parameter calculation of each structure are carried out. Finally, the inverse F type power amplifier is combined with the Doherty structure, and a high efficiency inverse F type Doherty power amplifier structure is proposed. The changes of fundamental wave and harmonic impedance of the two power amplifiers are analyzed. The function and length selection of carrier power amplifier and peak power amplifier compensation line are studied in detail. (4) the simulation design of high efficiency inverse class F Doherty power amplifier and its fabrication and debugging as well as digital predistortion linearization are completed. The results of single-tone test show that at 930MHz, the drain efficiency is still higher than that in the 64.2%.910-950MHz band at 7.5 dB, and the drain efficiency is above 50% at 8 dB, and the output power is more than 42.5 dB. After digital predistortion linearization, the upper and lower sideband ACPR of the output signal are -35.39dBc and -35.9dBc, respectively.
【學位授予單位】:寧波大學
【學位級別】:碩士
【學位授予年份】:2015
【分類號】:TN722.75
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