本文選題：微波單片集成電路 + Ga　； 參考：《西安電子科技大學(xué)》2015年碩士論文

【摘要】：微電子技術(shù)的發(fā)展水平和規(guī)模是衡量一個(gè)國家技術(shù)實(shí)力的重要標(biāo)志。隨著世界科學(xué)技術(shù)的發(fā)展,半導(dǎo)體技術(shù)一直的不斷發(fā)展,有著高頻特性、功率特性和低噪聲特性等優(yōu)點(diǎn)的微波單片集成電路(MMIC)因而得到廣泛應(yīng)用。微波單片集成電路是微波和毫米波通信、測(cè)繪等系統(tǒng)的核心元件。微波功率放大器在衛(wèi)星通信、雷達(dá)、電子對(duì)抗等領(lǐng)域有著廣泛的應(yīng)用,MMIC微波功放的設(shè)計(jì)技術(shù)屬于電子對(duì)抗的前沿技術(shù)之一。在現(xiàn)代無線通訊系統(tǒng)中,功率放大器起著非常重要的作用。新一代商用和軍用通信系統(tǒng)都需要功率放大器。新興的商業(yè)無線應(yīng)用顯著的提升了對(duì)功率放大器的研發(fā)。功率放大器在雷達(dá)和通信系統(tǒng)中是最重要的組成部分之一,砷化銦鎵、砷化鎵晶體管(p HEMT)具有高功率密度、高增益,這對(duì)于要求高效率,高功率,寬帶操作,以及小尺寸如活性相雷達(dá),未來的蜂窩,本地多點(diǎn)分配業(yè)務(wù)應(yīng)用的優(yōu)勢(shì)(LMDS)和衛(wèi)星通信來說是非常理想的應(yīng)用材料,。單片微波集成電路(MMIC),用于功率放大器與多級(jí)結(jié)構(gòu)的放大器制造可以進(jìn)一步減小芯片尺寸,并增加了小信號(hào)增益,以減少制造成本。本論文題目是“Ga As基MMIC功率放大器的研制”,主要設(shè)計(jì)的是9.5-13.3GHz Ga As基MMIC功率放大器芯片。具體研究內(nèi)容摘要如下:1.簡單介紹了MMIC的發(fā)展背景、國內(nèi)與國外的研究發(fā)展,功率放大器的性能參數(shù)與技術(shù)指標(biāo)。2.通過對(duì)砷化鎵贗配高電子遷移率晶體管器件的工作原理的分析,同時(shí)介紹了其簡單的工藝流程,并對(duì)其小信號(hào)狀態(tài)下的等效電路模型中的各項(xiàng)參數(shù)的提取辦法進(jìn)行簡單陳述。3.針對(duì)單片微波集成電路中的各類無源元件,詳細(xì)分析了它的等效電路模型及其各項(xiàng)技術(shù)指標(biāo)的物理意義。4.介紹了功率放大器的基本設(shè)計(jì)思想,介紹了功率放大器芯片的探針臺(tái)圓片測(cè)試和載體測(cè)試,給出了測(cè)試結(jié)果。
[Abstract]:The development level and scale of microelectronics technology is an important symbol to measure a country's technological strength. With the development of science and technology in the world, semiconductor technology has been continuously developed. Microwave monolithic integrated circuits (MMIC) with the advantages of high frequency characteristics, power characteristics and low noise characteristics have been widely used. Microwave monolithic integrated circuit is the core component of microwave and millimeter wave communication, mapping and other systems. Microwave power amplifier has been widely used in satellite communication, radar, electronic countermeasure and other fields. The design technology of MMIC microwave power amplifier is one of the frontier technologies of electronic countermeasure. Power amplifiers play a very important role in modern wireless communication systems. A new generation of commercial and military communication systems require power amplifiers. Emerging commercial wireless applications have significantly improved the development of power amplifiers. Power amplifiers are one of the most important components in radar and communication systems. InGaAs, gallium arsenide transistors (gallium arsenide transistors) have high power density and high gain, which requires high efficiency, high power and wide band operation. As well as small size such as active phase radar, future cellular, local multi-point distribution service applications advantage LMDS) and satellite communications are very ideal materials for applications. Monolithic microwave integrated circuit (MMIC) is used to fabricate power amplifier and multistage amplifier, which can further reduce the chip size and increase the small signal gain to reduce the manufacturing cost. The topic of this thesis is "Fabrication of GaAs based MMIC Power Amplifier", which is mainly designed for 9.5-13.3GHz GaAs based MMIC Power Amplifier chip. The specific contents of the study are summarized as follows: 1: 1. The development background of MMIC, the research and development at home and abroad, the performance parameters and technical index of power amplifier. Based on the analysis of the working principle of GaAs pseudo-electron mobility transistor device, the simple technological process is introduced, and the extraction method of the parameters in the equivalent circuit model under the small signal state is described briefly. Aiming at all kinds of passive components in monolithic microwave integrated circuit, the equivalent circuit model and the physical significance of each technical index are analyzed in detail. The basic design idea of power amplifier is introduced in this paper. The probe chip and carrier test of power amplifier chip are introduced, and the test results are given.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN722.75

【相似文獻(xiàn)】

相關(guān)期刊論文 前10條

1 張漢三;;微波單片集成電路(MMIC)[J];半導(dǎo)體情報(bào);1990年03期

2 陳效建,毛昆純,林金庭,楊乃彬;砷化鎵微波單片集成電路(MMIC)技術(shù)進(jìn)展[J];功能材料與器件學(xué)報(bào);2000年03期

3 黃云;GaAs微波單片集成電路(MMIC)的可靠性研究[J];微電子技術(shù);2003年01期

4 肖軍鋒;Si寬帶中功率微波單片集成電路(MMIC)[J];固體電子學(xué)研究與進(jìn)展;1988年04期

5 盛柏楨;;Hittite Microwave公司研制出無引線封裝MMIC功率放大器[J];半導(dǎo)體信息;2003年02期

6 王闖;錢蓉;孫曉瑋;;緊湊型K波段單級(jí)反饋式MMIC中功率放大器[J];半導(dǎo)體學(xué)報(bào);2006年06期

7 孫再吉;;瑞薩科技開發(fā)SiGe功率放大器MMIC[J];半導(dǎo)體信息;2006年04期

8 王闖;錢蓉;孫曉瑋;;K波段反饋式MMIC中功率放大器[J];固體電子學(xué)研究與進(jìn)展;2007年02期

9 曲蘭欣;用MMIC構(gòu)成的W波段振蕩源組件[J];固體電子學(xué)研究與進(jìn)展;1995年03期

10 孫再吉;三維MMIC的進(jìn)展[J];固體電子學(xué)研究與進(jìn)展;1997年04期

相關(guān)會(huì)議論文 前1條

1 朱軒昂;陳效建;林金庭;;有耗匹配寬帶MMIC功放研究[A];1999年全國微波毫米波會(huì)議論文集(上冊(cè))[C];1999年

相關(guān)碩士學(xué)位論文 前5條

1 孔岑;MMIC用鐵磁薄膜電感研究[D];電子科技大學(xué);2010年

2 鄧宗睿;MMIC寬帶中功率放大器的研究與設(shè)計(jì)[D];電子科技大學(xué);2012年

3 崔亮;GaAs基MMIC寬帶功率放大器研究[D];西安電子科技大學(xué);2013年

4 王海龍;GaAs基MMIC功率放大器的研制[D];西安電子科技大學(xué);2015年

5 宋增超;GaAs單片微波集成電路（MMIC）失效分析和評(píng)價(jià)技術(shù)[D];北京工業(yè)大學(xué);2003年

，

本文編號(hào)：1921853