本文選題：高壓功率脈沖 + IGBT�。� 參考：《吉林大學(xué)》2017年碩士論文

【摘要】：高壓功率脈沖技術(shù)在工業(yè)、軍事、環(huán)境保護(hù)等許多領(lǐng)域都有著廣泛的應(yīng)用。固體脈沖調(diào)制器是通過開關(guān)器件獲得瞬間的大功率高壓脈沖波形,因此開關(guān)器件的性能直接影響著固態(tài)脈沖調(diào)制器的輸出信號脈寬、功率、瞬態(tài)等特性。傳統(tǒng)的開關(guān)器件大多數(shù)是以氫閘流管為主的真空開關(guān)器件,這種器件雖然能夠滿足高頻窄脈沖輸出,但是它的體積大,效率低,并且較低的耐壓、耐流值也限制了輸出更高功率的信號。目前,絕緣柵極晶體管IGBT(Isolated Gate Bipolar Transistor)已成為脈沖調(diào)制器的理想開關(guān)器件。與傳統(tǒng)真空開關(guān)器件相比,IGBT不僅在高重復(fù)頻率的工作條件下有著更高的穩(wěn)定性和更高的功率容量,還具有體積小、重量輕、驅(qū)動電路設(shè)計簡單等優(yōu)點(diǎn)。但是隨著工業(yè)技術(shù)的發(fā)展,固態(tài)脈沖調(diào)制器的輸出功率等級要求已經(jīng)變得越來越高,單個IGBT的耐壓值和耐流值卻達(dá)不到設(shè)備使用的要求,也限制了IGBT的應(yīng)用和發(fā)展,將多個IGBT通過串聯(lián)或者并聯(lián)組合使用的方式就可以提高整個開關(guān)的輸出功率。但是這種方法又很容易引起開關(guān)運(yùn)行不同步,嚴(yán)重時還會導(dǎo)致IGBT損壞。因此,研究串聯(lián)均壓技術(shù)和并聯(lián)均流技術(shù)是解決IGBT串、并聯(lián)擴(kuò)容問題的關(guān)鍵。本文首先介紹了IGBT的工作原理以特性,在此基礎(chǔ)上設(shè)計了一種高性能的采用EXB841驅(qū)動芯片的IGBT柵極驅(qū)動保護(hù)電路。接著從靜態(tài)因素和動態(tài)因素兩個方面分別分析IGBT串聯(lián)組合和并聯(lián)組合時的工作失衡問題,并使用柵極驅(qū)動端均壓方法改善串聯(lián)電壓的分布不均,使用調(diào)節(jié)柵極電壓方法改善并聯(lián)電流的分布不均。本文完成了均壓、均流實驗電路的硬件電路設(shè)計,進(jìn)行了開關(guān)特性測試,并從電路實驗方面進(jìn)一步對整體電路的性能進(jìn)行驗證。最后使多個串聯(lián)IGBT電路工作在高壓條件下,完成了串聯(lián)均壓實驗電路的穩(wěn)定性測試;多個并聯(lián)IGBT電路在流過大電流條件下,完成并聯(lián)均流電路驗證。實驗結(jié)果證明本文設(shè)計的IGBT均壓、均流電路是可行的。大部分文獻(xiàn)僅是通過軟件仿真的方式分析串、并聯(lián)電路的開關(guān)不平衡特性,本文通過制作硬件電路完成實驗,驗證了所設(shè)計的IGBT串聯(lián)均壓電路和并聯(lián)均流電路中的開關(guān)特性和整體電路的穩(wěn)定性,直觀、經(jīng)濟(jì)、可靠地提高了IGBT的輸出功率,為固態(tài)脈沖調(diào)制器輸出更高功率脈沖電信號提供了實驗基礎(chǔ)。
[Abstract]:High-voltage power pulse technology has been widely used in many fields, such as industry, military, environmental protection and so on. The solid-state pulse modulator obtains instantaneous high-power and high-voltage pulse waveform by switching device, so the performance of switching device directly affects the pulse width, power and transient characteristics of the output signal of solid-state pulse modulator. Most of the traditional switch devices are vacuum devices with hydrogen thyratron. Although this kind of device can satisfy the high frequency and narrow pulse output, it has the advantages of large volume, low efficiency and low voltage resistance. Current resistance also limits the output of higher power signals. At present, the insulated gate transistor (IGBT(Isolated Gate Bipolar Transistor) has become the ideal switch device of pulse modulator. Compared with traditional vacuum switch devices, IGBT not only has higher stability and higher power capacity under high repetition rate, but also has the advantages of small volume, light weight and simple design of driving circuit. However, with the development of industrial technology, the output power level of solid-state pulse modulator has become more and more high. The voltage and current resistance of a single IGBT can not meet the requirements of the equipment, which limits the application and development of IGBT. The output power of the whole switch can be improved by combining multiple IGBT in series or parallel. However, this method can easily cause the switch to run out of sync and IGBT damage in serious cases. Therefore, the key to solve the problem of IGBT series and parallel expansion is to study the technology of series voltage sharing and parallel current sharing. This paper first introduces the working principle and characteristics of IGBT, and then designs a high performance IGBT gate drive protection circuit using EXB841 driver chip. Then the imbalance of IGBT series combination and parallel connection combination is analyzed from static and dynamic aspects, and the voltage sharing method of grid driver is used to improve the uneven distribution of series voltage. The method of adjusting gate voltage is used to improve the uneven distribution of parallel current. In this paper, the hardware circuit design of the voltage-sharing and current-sharing experimental circuit is completed, the switching characteristics are tested, and the performance of the whole circuit is further verified from the circuit experiment. Finally, several series IGBT circuits work under the condition of high voltage, and the stability test of the series voltage-sharing experiment circuit is completed, and the parallel current sharing circuit verification is completed for several parallel IGBT circuits under the condition of high current. The experimental results show that the IGBT circuit designed in this paper is feasible. Most of the literature is only through software simulation to analyze the switch imbalance of serial and parallel circuits. In this paper, the hardware circuit is made to complete the experiment. The switching characteristics and the stability of the whole circuit in the IGBT series voltage sharing circuit and the parallel current sharing circuit are verified. The output power of the IGBT is improved reliably and economically, which is intuitionistic, economical and reliable. It provides the experimental basis for the solid state pulse modulator to output higher power pulse signal.
【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN322.8

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