本文選題：GaSb + 摻雜�。� 參考：《長(zhǎng)春理工大學(xué)》2017年碩士論文

【摘要】：GaSb材料因其獨(dú)特的性質(zhì)具有廣闊的應(yīng)用前景。但是本征GaSb通常為P型導(dǎo)電,存在大量受主缺陷,限制了GaSb的應(yīng)用。此外GaSb表面易形成氧化物,使其表面性質(zhì)嚴(yán)重退化,導(dǎo)致高的表面復(fù)合速率和大的漏電流,阻礙提高GaSb基器件的性能。本文以提高GaSb材料的光學(xué)性質(zhì)為研究目標(biāo),通過對(duì)GaSb材料進(jìn)行N型和P型摻雜與MgO干法鈍化處理,調(diào)節(jié)GaSb薄膜的發(fā)光性質(zhì),為GaSb材料的器件化應(yīng)用奠定了基礎(chǔ)。本文的研究?jī)?nèi)容主要包含以下兩部分:利用分子束外延技術(shù)在GaAs襯底上異質(zhì)外延N型Te摻雜、P型Be摻雜及非摻雜GaSb樣品;利用X射線衍射研究了生長(zhǎng)GaSb薄膜的晶體質(zhì)量,結(jié)果表明非摻雜GaSb和摻雜GaSb的晶體質(zhì)量很好;利用光致發(fā)光研究了摻雜對(duì)發(fā)光的影響,N型Te摻雜引入與Te相關(guān)的施主-受主躍遷的發(fā)光峰,10K時(shí)位于0.729eV。P型Be摻雜會(huì)減少受主缺陷的濃度,光致發(fā)光譜中只觀察到束縛激子的發(fā)光峰。利用原子層沉積技術(shù)在GaSb襯底上生長(zhǎng)了不同厚度的MgO薄膜;使用X射線光電子能譜測(cè)試了MgO/GaSb異質(zhì)結(jié)的能帶帶階,計(jì)算結(jié)果表明MgO/GaSb為I型能帶結(jié)構(gòu),說明了沉積MgO后,電子和空穴被局域在GaSb層,導(dǎo)致電子和空穴的復(fù)合率增大,提高了GsSb材料的發(fā)光性能;并且使用PL研究了MgO對(duì)GaSb的發(fā)光性質(zhì)的改善,室溫時(shí)GaSb襯底與MgO/GaSb位于同一峰位,即帶邊發(fā)光,且MgO/GaSb異質(zhì)結(jié)的發(fā)光強(qiáng)度是GaSb襯底的1.5倍,表明沉積MgO薄膜對(duì)GaSb具有增強(qiáng)其發(fā)光的作用。與非摻雜GaSb相比,生長(zhǎng)MgO薄膜后發(fā)光質(zhì)量得到改善,各個(gè)峰的半高寬明顯變窄,低溫時(shí)形成了分離的峰。
[Abstract]:GaSb materials have a broad application prospect because of their unique properties. However, the intrinsic GaSb is usually P-type conductive, there are a large number of acceptor defects, which limits the application of GaSb. In addition, oxides are easily formed on the surface of GaSb, resulting in serious degradation of surface properties, resulting in high surface recombination rate and large leakage current, which hinders the improvement of the performance of GaSb based devices. In order to improve the optical properties of GaSb materials, this paper regulates the luminescence properties of GaSb thin films by N and P doping and MgO dry passivation of GaSb materials, which lays a foundation for the device application of GaSb materials. The main contents of this paper are as follows: heteroepitaxy of N-type Te doped and non-doped GaSb samples on GaAs substrates by molecular beam epitaxy (MBE), crystal quality of GaSb thin films grown by X-ray diffraction (XRD), The results show that the crystal quality of undoped GaSb and doped GaSb is very good. The effect of dopant on luminescence was investigated by using photoluminescence. The concentration of acceptor defect was reduced by doping in 0.729eV.P type be when the luminescence peak of donor-acceptor transition associated with Te was introduced into N-type Te doping. In the photoluminescence, only the photoluminescence peaks of bound excitons are observed. MgO thin films with different thickness were grown on GaSb substrate by atomic layer deposition technique, and the band order of MgO/GaSb heterojunction was measured by X-ray photoelectron spectroscopy. The calculated results show that MgO/GaSb is I-type energy band structure, which shows that after MgO deposition, the band order of MgO/GaSb heterojunction is determined by X-ray photoelectron spectroscopy (XPS). Electron and hole are localized in the GaSb layer, which leads to the increase of the recombination rate of electron and hole, which improves the luminescent properties of GsSb, and the improvement of the luminescent properties of GaSb by MgO is studied by PL. The GaSb substrate is located at the same peak as MgO/GaSb at room temperature. The luminescence intensity of MgO/GaSb heterojunction is 1.5 times higher than that of GaSb substrate, indicating that the deposition of MgO thin films can enhance the luminescence of GaSb. Compared with undoped GaSb, the luminescent quality of MgO thin films is improved, the half-maximum width of each peak is narrowed obviously, and a separate peak is formed at low temperature.
【學(xué)位授予單位】：長(zhǎng)春理工大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN304.055

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本文編號(hào)：1916880