本文選題：雪崩光電二極管 + 碰撞離化��； 參考：《華中科技大學(xué)》2015年碩士論文

【摘要】：在長距離的光纖通信系統(tǒng)中,由于傳輸損耗而造成光信號(hào)微弱問題十分突出。雪崩光電二極管(APD)由于其內(nèi)部增益,靈敏度通常比PIN二極管高5~10 dB。高速APD因?yàn)楦哽`敏度和足夠的速率被列入下一代光傳輸系統(tǒng)的規(guī)劃中。其中InP/InGaAs APD在10Gbit/s以及更高速率的光通信系統(tǒng)中已有廣泛的應(yīng)用。近年來,由于InAlAs材料具有優(yōu)秀的離化特性和更寬的帶隙,使得InAlAs/InGaAs APD受到重視。但相比于InAlAs材料,InP APD的相關(guān)工藝更加成熟、產(chǎn)品可靠性也更好。因此,本文主要研究了適用于25 Gbit/s及更高速率的InP/InGaAs APD,并探索了基于空間離化的級(jí)聯(lián)結(jié)構(gòu)InP APD。為了研究和優(yōu)化高速APD器件,本文對(duì)隨機(jī)路徑長度(RPL)模型針對(duì)吸收漸變電荷倍增分離(SAGCM)APD做了相應(yīng)的擴(kuò)展。并采用靜態(tài)電場蒙特卡羅(MC)碰撞離化模型對(duì)電荷層的離化系數(shù)做了修正,并對(duì)其進(jìn)行了驗(yàn)證。RPL模型所得脈沖響應(yīng)通過延時(shí)、權(quán)重處理計(jì)算出器件的整體響應(yīng)。再通過該脈沖響應(yīng)結(jié)合暗電流、碼間串?dāng)_(ISI)和帶寬限制增益計(jì)算出相應(yīng)的誤碼率(BER),從而得到各層參數(shù)對(duì)器件靈敏度的影響。相比于直接使用MC模型對(duì)整體器件進(jìn)行模擬,該修正的RPL模型在保證精確度的同時(shí)大幅降低了模擬所需時(shí)間。所模擬結(jié)果顯示出電荷層對(duì)高速SAGCM APD性能有很大影響,并且由于其相對(duì)于倍增層厚度更具有可調(diào)性的特點(diǎn),從而可以起到在保證靈敏度的同時(shí)依據(jù)現(xiàn)有工藝來調(diào)節(jié)外延層離化區(qū)域結(jié)構(gòu)參數(shù)的作用。對(duì)于InP低噪聲級(jí)聯(lián)APD的探索,本文首先通過MC模型對(duì)相應(yīng)物理機(jī)制進(jìn)行了分析,并分析驗(yàn)證了其可行性。再采用修正的弛豫效應(yīng)理論(DSMT)模型和RPL模型分析了其增益-噪聲特性、頻率響應(yīng)特性以及級(jí)聯(lián)數(shù)目和外延層參數(shù)對(duì)其性能的影響,并在此基礎(chǔ)上對(duì)外延層結(jié)構(gòu)進(jìn)行了簡化和優(yōu)化。此外,本文使用以鎖相放大器為核心的測試平臺(tái)對(duì)InP級(jí)聯(lián)APD的I-V特性和噪聲特性進(jìn)行了測試。測試結(jié)果顯示級(jí)聯(lián)結(jié)構(gòu)InP APD的噪聲特性較體材料而言有顯著改善。
[Abstract]:In long-distance optical fiber communication system, the problem of weak optical signal caused by transmission loss is very prominent. Because of its internal gain, the sensitivity of avalanche photodiode is usually 5 ~ 10 dB higher than that of PIN diode. High-speed APD is included in the next generation optical transmission system planning because of its high sensitivity and high speed. Among them, InP/InGaAs APD has been widely used in 10Gbit/s and higher rate optical communication systems. In recent years, InAlAs/InGaAs APD has attracted much attention due to its excellent ionization properties and wider band gap. But compared with the InAlAs material, the related technology of InP APD is more mature and the product reliability is better. Therefore, this paper mainly studies InP/InGaAs APDs suitable for 25 Gbit/s and higher rates, and explores the cascaded InP APDs based on spatial ionization. In order to study and optimize the high speed APD devices, the random path length (RPL) model is extended to absorb the gradual charge multiplication separation. The static electric field Monte Carlo (MC) collision ionization model is used to modify the ionization coefficient of the charge layer, and it is verified that the pulse response obtained from the RPL model can be calculated through delay, and the overall response of the device is calculated by weight processing. The corresponding bit error rate (BER) is calculated by combining the pulse response with dark current, ISI) and bandwidth-limited gain, and the influence of the parameters of each layer on the sensitivity of the device is obtained. Compared with the direct use of MC model to simulate the whole device, the modified RPL model can greatly reduce the simulation time while ensuring the accuracy. The simulation results show that the charge layer has a great influence on the performance of high speed SAGCM APD, and because of its more adjustable characteristics than the thickness of the multiplying layer, Thus, the structure parameters of the ionization region of the epitaxial layer can be adjusted according to the existing process while ensuring the sensitivity. For the exploration of InP low noise cascaded APD, the physical mechanism is analyzed by MC model, and its feasibility is verified. Then the gain noise characteristics, frequency response characteristics and the effects of the number of cascades and the parameters of epitaxial layers on their performance are analyzed by using the modified relaxation effect theory (DSMTM) model and the RPL model. On this basis, the epitaxial layer structure is simplified and optimized. In addition, the I-V and noise characteristics of InP cascaded APD are tested by using a phase-locked amplifier as the core test platform. The results show that the noise characteristics of cascaded InP APD are much better than that of bulk materials.
【學(xué)位授予單位】：華中科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN929.11;TN312.7

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 ;Monte Carlo investigation of avalanche multiplication process in thin InP avalanche photodiodes[J];Chinese Science Bulletin;2009年20期

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本文編號(hào)：1889102