本文選題：GaN + HEMT��； 參考：《中國(guó)科學(xué)技術(shù)大學(xué)》2015年碩士論文

【摘要】：隨著CMOS工藝進(jìn)入10nm制程,摩爾定律能否維持下去一直備受爭(zhēng)議。人們一直在探索新的材料,GaN作為第三代半導(dǎo)體材料,其寬禁帶、高擊穿電壓、高電子遷移率的特性,一直備受青睞,可以應(yīng)用在各個(gè)領(lǐng)域,如雷達(dá)、衛(wèi)星和基站等。GaN器件雖然性能優(yōu)越,但是其電氣特性復(fù)雜,會(huì)降低電路的設(shè)計(jì)效率,無法充分發(fā)揮器件的性能。所以一個(gè)可以準(zhǔn)確預(yù)測(cè)其輸出電特性的大信號(hào)模型,對(duì)提高GaN器件設(shè)計(jì)效率至關(guān)重要。本文將對(duì)GaN器件建模中的I-V關(guān)系和陷阱效應(yīng)等關(guān)鍵問題進(jìn)行研究,通過理論分析并給出相應(yīng)的測(cè)試驗(yàn)證結(jié)果。 輸出漏電流隨柵電壓、漏電壓的變化(I-V)關(guān)系是器件建模中的關(guān)鍵問題。本文分析了I-V模型選擇和建立的過程,同時(shí)通過分析各模型參數(shù)隨外部偏置電壓的變化關(guān)系,發(fā)現(xiàn)原有的Angelov模型不能很好的擬合測(cè)試數(shù)據(jù)。本文在原有的Angelov模型的基礎(chǔ)上,修改其中φ、α、Vpkm等參數(shù),提出了新的I-V函數(shù)關(guān)系,并通過測(cè)試結(jié)果驗(yàn)證其準(zhǔn)確性。 為了正確描述GaN器件的輸出電流,對(duì)陷阱效應(yīng)進(jìn)行建模至關(guān)重要�，F(xiàn)有的陷阱效應(yīng)模型,常描述陷阱效應(yīng)導(dǎo)致的部分電特性,對(duì)工作在RF信號(hào)下的器件,不能很好的擬合。本文詳細(xì)的分析了陷阱效應(yīng)的物理機(jī)制,其俘獲、發(fā)射過程和外部偏置電壓的關(guān)系,以及有陷阱效應(yīng)導(dǎo)致的各種電特性。本文將陷阱效應(yīng)分為柵延時(shí)和漏延時(shí)來處理。提出了用靜態(tài)偏置依賴的方法來處理柵端延時(shí),用漏延時(shí)子電路的方法處理漏端延時(shí)。其中,漏延時(shí)子電路可以完整的描述陷阱的俘獲發(fā)射效應(yīng),更加接近器件的真實(shí)工作狀態(tài)。測(cè)試和仿真結(jié)果驗(yàn)證了所提陷阱效應(yīng)模型。
[Abstract]:As the CMOS process enters the 10nm process, whether Moore's law can be maintained has been controversial. As the third generation semiconductor material, the characteristics of wide band gap, high breakdown voltage and high electron mobility have been widely used in many fields, such as radar, etc. Although the performance of gan devices such as satellite and base station is superior, its electrical characteristics are complex, which will reduce the design efficiency of the circuit and can not give full play to the performance of the devices. Therefore, a large signal model which can accurately predict the output electrical characteristics is very important to improve the design efficiency of GaN devices. In this paper, the key problems of I-V relation and trap effect in GaN device modeling are studied, and the corresponding test results are given through theoretical analysis. The relation of output leakage current with gate voltage and leakage voltage is a key problem in device modeling. In this paper, the selection and establishment of I-V model are analyzed. By analyzing the relationship between the parameters of each model and the external bias voltage, it is found that the original Angelov model can not fit the test data well. Based on the original Angelov model, the parameters 蠁, 偽 -Vpkm are modified, and a new I-V function relation is proposed, and the accuracy is verified by the test results. In order to correctly describe the output current of GaN devices, it is very important to model the trap effect. The existing trap effect models often describe some of the electrical characteristics caused by the trap effect and can not be fitted well for devices working in RF signals. In this paper, the physical mechanism of trap effect, its trapping, the relationship between emission process and external bias voltage, and various electrical characteristics due to trap effect are analyzed in detail. In this paper, the trap effect is divided into gate delay and leakage delay. A static bias dependent method is proposed to deal with the gate delay and a drain delay subcircuit is used to deal with the leakage delay. Among them, the leakage delay subcircuit can describe the trap capture and emission effect completely, which is closer to the real working state of the device. The test and simulation results verify the proposed trap effect model.
【學(xué)位授予單位】：中國(guó)科學(xué)技術(shù)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN386

【參考文獻(xiàn)】

相關(guān)期刊論文 前1條

1 王翠梅,王曉亮,王軍喜;AlGaN/GaN HEMT電流崩塌效應(yīng)研究進(jìn)展[J];固體電子學(xué)研究與進(jìn)展;2005年01期

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本文編號(hào)：1886018