本文選題：同質(zhì)集成 + 量子阱二極管��； 參考：《Frontiers of Information Technology & Electronic Engineering》2017年09期

【摘要】：本文采用晶圓級微納加工技術(shù),基于硅襯底氮化鎵晶圓,提出并制備了同質(zhì)集成發(fā)射極、集電極和基極的可見光互聯(lián)芯片。利用In Ga N/Ga N量子阱二極管器件發(fā)光探測共存的特性,芯片的發(fā)射極和集電極采用相同的量子阱結(jié)構(gòu),并通過相同的制備工藝實現(xiàn)。發(fā)射極和集電極之間通過懸空的光波導(dǎo)連接,實現(xiàn)器件之間的光互聯(lián)。同質(zhì)集成可見光互聯(lián)芯片集成兩個共基極的光致晶體管,實現(xiàn)芯片內(nèi)可見光的發(fā)射、傳輸和探測功能。該可見光互聯(lián)芯片可以廣泛應(yīng)用于光致類腦神經(jīng)形態(tài)芯片、芯片內(nèi)可見光通信、智能顯示、微納成像及光傳感等領(lǐng)域。
[Abstract]:Based on silicon substrate gallium nitride wafer, a visible light interconnection chip with homogeneous integrated emitter, collector and base electrode is proposed and fabricated by wafer-level micro-nano fabrication technology in this paper. In Ga N/Ga N quantum well diodes are used to detect coexistence. Emitter and collector adopt the same quantum well structure and are realized by the same fabrication process. Optical interconnection between emitter and collector is realized by suspended optical waveguide. The homogeneous integrated visible light interconnection chip integrates two common base phototransistors to realize the functions of transmitting, transmitting and detecting visible light in the chip. The visible-light interconnection chip can be widely used in the field of photo-induced neuron-like chips, visible light communication, intelligent display, micro-nano imaging and optical sensing.
【作者單位】： Peter
【基金】：Project supported by the Special Project for Inter-government Collaboration of State Key Research and Development Program,China(No.2016YFE0118400) the Natural Science Foundation of Jiangsu Province,China(No.BE2016186) the National Natural Science Foundation of China(Nos.61322112 and 61531166004) the Research Project(Nos.KYZZ16_0258,CJKA201506,and CKJA201306) the ‘111’ Project
【分類號】：TN491
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本文編號：1881548