本文選題：大功率 + IGBT驅(qū)動模塊��； 參考：《電子科技大學》2015年碩士論文

【摘要】：隨著電力電子功率器件在各種大功率電子設備中的廣泛應用,IGBT開關管已普遍應用于各種大功率開關場合。IGBT是一款以電壓控制、工作耐壓高、輸入阻抗高、輸出阻抗低、開關頻率高的開關器件。針對大功率IGBT器件的控制,需要穩(wěn)定可靠的驅(qū)動電路實現(xiàn)開關控制。驅(qū)動電路是控制信號和功率電路的中間連接橋梁,因此設計一款安全可靠、經(jīng)濟實惠的驅(qū)動模塊至關重要。本文依據(jù)核磁共振梯度功放系統(tǒng)對驅(qū)動電路的設計要求,設計完成了一款驅(qū)動能力強、能夠?qū)崿F(xiàn)高壓隔離、并且具有完善保護電路的IGBT驅(qū)動模塊,論文的主要內(nèi)容包括:1、本文在分析IGBT內(nèi)部結構的基礎上,討論了IGBT的開關特性,針對IGBT工作過程中失效的主要原因(過壓、過流、過熱等)進行了詳細分析,提出了大功率IGBT驅(qū)動模塊設計的關鍵問題,給出了大功率IGBT驅(qū)動模塊的整體設計方案。2、完成了大功率IGBT驅(qū)動模塊主電路的設計。驅(qū)動輸入電路實現(xiàn)了信號之間的互鎖和故障檢測功能;采用脈沖變壓器隔離的方式實現(xiàn)了驅(qū)動信號和功率電路的電氣隔離;通過死區(qū)電路的設計,避免了IGBT在開通過程中因為控制信號的錯誤導致上下橋壁直通而造成的短路現(xiàn)象;設計了柵極驅(qū)動電路,主要是為IGBT的驅(qū)動信號提供功率放大功能,并且盡量減少電路中的開關電壓尖峰;針對IGBT在工作過程中出現(xiàn)的異�，F(xiàn)象分別設計了鉗位電路、過流保護電路、過熱保護電路等,從而有效地保證了IGBT能夠安全穩(wěn)定地運行。3、大功率IGBT工作電壓高達幾百伏,功率電路的故障可能會影響到驅(qū)動模塊的穩(wěn)定性,因此本文設計了獨立的DC-DC隔離電源。該電源以UC3842作為主控芯片,以單端反激的拓撲結構設計了具有三路輸出的獨立電源,電源輸出電壓分別為?15V、5V。該電源采用光耦隔離的方式實現(xiàn)了反饋控制,使得整個電源構成了完整的閉環(huán)控制系統(tǒng)。4、采用Pspice軟件對驅(qū)動模塊的各部分電路進行了仿真驗證,根據(jù)仿真結果對電路中的參數(shù)進行了優(yōu)化設計。5、基于仿真分析完成了驅(qū)動模塊的PCB制版并進行了實際電路的調(diào)試,通過將模塊搭載到磁共振梯度功放系統(tǒng)進行模塊性能測試分析。
[Abstract]:With the wide application of power electronic power devices in various high-power electronic devices, IGBT switches have been widely used in various high-power switching occasions. IGBT is a kind of high voltage control, high working voltage, high input impedance and low output impedance. Switch device with high switching frequency. For the control of high power IGBT devices, a stable and reliable drive circuit is needed to realize the switch control. Drive circuit is the bridge between control signal and power circuit, so it is very important to design a safe, reliable and economical driving module. According to the design requirements of the NMR gradient power amplifier system, a IGBT driver module with strong driving ability, high voltage isolation and perfect protection circuit is designed in this paper. The main contents of this paper include: 1. Based on the analysis of the internal structure of IGBT, the switching characteristics of IGBT are discussed, and the main causes of IGBT failure (overvoltage, overcurrent, overheating etc.) are analyzed in detail. The key problems in the design of high power IGBT driver module are put forward. The whole design scheme of high power IGBT driver module is given. The main circuit of high power IGBT driver module is designed. The driving input circuit realizes the interlocking and fault detection between the signals, the electrical isolation of the driving signal and the power circuit by the way of pulse transformer isolation, and the design of the dead-zone circuit. The short circuit caused by the error of control signal in IGBT is avoided, and the gate drive circuit is designed, which mainly provides power amplifying function for the driving signal of IGBT. And the switching voltage spike in the circuit is reduced as far as possible, and the clamping circuit, over-current protection circuit, overheat protection circuit and so on are designed for the abnormal phenomenon of IGBT in the working process. Therefore, the IGBT can run safely and stably, the high power IGBT working voltage is up to several hundred volts, and the power circuit failure may affect the stability of the driving module. Therefore, an independent DC-DC isolation power supply is designed in this paper. In this power supply, UC3842 is used as the main control chip, and the single end flyback topology is used to design an independent power supply with three outputs. The output voltage of the power supply is 15V / 5V respectively. The feedback control is realized by optocoupler isolation, which makes the whole power supply constitute a complete closed-loop control system. The circuit of the driving module is simulated and verified by Pspice software. According to the simulation results, the parameters in the circuit are optimized. 5. Based on the simulation analysis, the PCB plate-making of the driving module is completed and the actual circuit is debugged. The performance of the module is tested and analyzed by loading the module into the magnetic resonance gradient power amplifier system.
【學位授予單位】：電子科技大學
【學位級別】：碩士
【學位授予年份】：2015
【分類號】：TN322.8

【引證文獻】

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本文編號：1878615