本文選題：材料改性 + 氮化鎵��； 參考：《北京師范大學(xué)學(xué)報(自然科學(xué)版)》2017年05期

【摘要】：對100keV、1×1015cm-2的Er離子注入的GaN退火樣品的各項性質(zhì)進行研究,采取光致發(fā)光(室溫)、拉曼光譜和盧瑟福背散射對不同的退火樣品的微觀結(jié)構(gòu)和光學(xué)性質(zhì)進行研究.在退火樣品中,均觀測到了在1 539nm附近的PL峰.隨著退火溫度的升高,PL峰強在900℃時達到最大值.RBS結(jié)果顯示隨著溫度的升高,Er離子不斷擴散,且有部分在表面析出,導(dǎo)致在光學(xué)活性位置上的Er離子減少,使PL強度在更高溫度下減弱.
[Abstract]:The properties of GaN annealed samples implanted with er ions of 100 Kev 1 脳 1015cm-2 were studied. The microstructure and optical properties of different annealed samples were studied by photoluminescence (room temperature, Raman and Rutherford backscattering). The PL peaks near 1 539nm were observed in the annealed samples. With the increase of annealing temperature, the peak intensity of PL reached the maximum value at 900 鈩，

本文編號：1874114