發(fā)布時(shí)間：2018-05-10 09:55

  本文選題：LED封裝基板 + 陽極氧化　； 參考：《華東師范大學(xué)》2015年碩士論文

【摘要】：發(fā)光二極管(LED)正逐步取代傳統(tǒng)光源,市場對(duì)LED功率需求逐漸加大,而傳統(tǒng)封裝導(dǎo)致LED散熱瓶頸,限制了大功率LED發(fā)展。LED的熱量主要由芯片向下傳導(dǎo),經(jīng)過封裝基板導(dǎo)向熱沉,因此封裝基板是LED散熱通道的重要一環(huán)。而目前常用的基板包括金屬印刷電路板、覆銅陶瓷板等基板存在散熱瓶頸、生產(chǎn)成本過高、存在技術(shù)限制等問題。針對(duì)該問題本論文致力于研究一種基于陽極氧化技術(shù)的高絕緣、高導(dǎo)熱、低成本的新型鋁基封裝基板。研究在硫酸、草酸體系下通過陽極氧化法制備氧化鋁(A1203)膜,系統(tǒng)研究了氧化電流密度、溶液濃度、反應(yīng)時(shí)間、電極間距等對(duì)氧化鋁膜形貌的影響。在0.8mol/L硫酸溶液中,保持兩電極間距為3.0cm,進(jìn)行40min陽極氧化,當(dāng)電流密度為3.5A/dm2時(shí),制得平均孔徑大小為22nm,孔密度為40個(gè)/200nm*200nm,膜厚為11μm的氧化鋁膜。實(shí)驗(yàn)中,采用柔性電極也制得了均勻致密的氧化鋁膜。氧化鋁膜具有較好的絕緣性,氧化鋁最高擊穿電壓可達(dá)2.4kV,并能提高器件的散熱能力。為了提高A1203膜在LED封裝中反射作用,采用電泳、絲印、提拉等方法在A1203膜表面制備Ti02膜,Ti02膜在保持基板絕緣和散熱性能的情況下,提高了基板的表面反射率,有利于其在LED封裝中的應(yīng)用。
[Abstract]:Light emitting diode (LED) is gradually replacing the traditional light source, and the market demand for LED power is increasing gradually, while the traditional packaging leads to the bottleneck of heat dissipation of LED, which limits the heat transfer of high-power LED from the chip down, and the heat sink is guided by the encapsulated substrate. Therefore, the packaging substrate is an important part of the LED heat dissipation channel. However, the commonly used substrates include metal printed circuit boards, copper clad ceramic boards and other substrates, such as heat dissipation bottlenecks, high production costs, technical limitations and so on. In order to solve this problem, a new type of aluminum based packaging substrate based on anodizing technology is studied in this paper, which is characterized by high insulation, high thermal conductivity and low cost. A1203) films were prepared by anodic oxidation in sulfuric acid and oxalic acid systems. The effects of oxidation current density, solution concentration, reaction time and electrode spacing on the morphology of alumina films were systematically studied. In 0.8mol/L sulfuric acid solution, the average pore size, pore density and film thickness of 40min anodic oxidation were 22 nm, 40 / 200 nm and 11 渭 m, respectively, and the average pore size was 22 nm, the pore density was 40 / 200 nm and the thickness of the film was 11 渭 m. In the experiment, a uniform and compact alumina film was also prepared by using flexible electrode. Alumina film has good insulation, the highest breakdown voltage of alumina can be up to 2.4 kV, and the heat dissipation ability of the device can be improved. In order to improve the reflection of A1203 film in LED packaging, the surface reflectivity of the substrate was improved by using electrophoretic, screen printing and Czochralski methods to prepare Ti02 film Ti02 on the surface of A1203 film, while maintaining the insulation and heat dissipation of the substrate. It is beneficial to the application of LED package.
【學(xué)位授予單位】：華東師范大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN312.8

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本文編號(hào)：1868845