本文選題：彈性電子 + 有機(jī)薄膜晶體管�。� 參考：《合肥工業(yè)大學(xué)》2015年碩士論文

【摘要】：彈性電子器件可以重復(fù)拉伸、壓縮、折疊、扭轉(zhuǎn)等和應(yīng)用于復(fù)雜曲面,與傳統(tǒng)電子器件相比,彈性電子器件在生物醫(yī)學(xué)、顯示、成像系統(tǒng)、電子皮膚和太陽(yáng)能電池板等領(lǐng)域有著廣闊的應(yīng)用前景。目前,有機(jī)薄膜晶體管和傳感器作為彈性電子的兩個(gè)重要領(lǐng)域,如何實(shí)現(xiàn)它們的彈性化成為非常熱門(mén)的課題。本論文圍繞如何實(shí)現(xiàn)有機(jī)薄膜晶體管半導(dǎo)體層與電極的彈性化以及彈性應(yīng)力傳感器的制備展開(kāi)了一系列研究。主要工作如下：(1)研究了P3HT/SIS混合物在不同拉伸比例下性能與形貌的變化。研究發(fā)現(xiàn),隨著拉伸比例的不斷增大,器件性能是有一定的減小的,未拉伸時(shí)候,器件的場(chǎng)效應(yīng)遷移率在2.26×10-3 cm2 V-1 s-1左右；當(dāng)拉伸10%時(shí),器件遷移率有輕微下降,達(dá)到2.22×10-3cm2 V-1 s-1左右；繼續(xù)拉伸到20%,器件的遷移率下降到1×10-3cm2 V-1 s-1;當(dāng)拉伸到40%時(shí),器件遷移率在9.3×10-4 cm2 V-1 s-1;繼續(xù)拉伸到60%,器件半導(dǎo)體性能基本消失。(2)采用十二烷基磺酸鈉(SDS)和聚(3,4-乙撐二氧噻吩)／聚苯乙烯磺酸鹽(PEDOT/PSS)做分散劑制備了分散性能良好的多壁碳納米管溶液,借助聚二甲基硅氧烷(PDMS)在硅片表面形成親水疏水區(qū)域,可以實(shí)現(xiàn)溶液法制備圖案化的碳納米管薄膜電極。應(yīng)用圖案化碳納米管電極制作聚(3-己基噻吩)有機(jī)薄膜晶體管,以SDS和PEDOT/PSS為分散劑獲得的器件遷移率分別為0.01cm2 V-1 s-1和0.0075 cm2 V-1 s-1,開(kāi)關(guān)電流比均為3×103。。(3)我們通過(guò)還原電紡聚氨酯纖維上附著的氧化石墨烯得到了一個(gè)高彈度靈活的、可伸縮的應(yīng)力傳感器。應(yīng)力傳感器在拉伸到50%的情況下電阻值變化了四分之一。電紡聚氨酯纖維的在制備成傳感器過(guò)程時(shí)的形貌和穩(wěn)定性我們同樣做了研究。高度靈活的、可伸縮的應(yīng)力傳感器的實(shí)際應(yīng)用潛力巨大,例如在人類(lèi)運(yùn)動(dòng)檢測(cè)領(lǐng)域。這種簡(jiǎn)單且廉價(jià)的石墨烯層可以用來(lái)有效的制備石墨烯應(yīng)變傳感器且這種傳感器具備出色的穩(wěn)定性和電學(xué)性能。
[Abstract]:Elastic electronic devices can be repeatedly stretched, compressed, folded, twisted, and applied to complex surfaces. Compared with traditional electronic devices, elastic electronic devices are used in biomedical, display, imaging systems. Electronic skin and solar panels and other fields have a broad application prospects. At present, organic thin film transistors and sensors are two important fields of elastic electronics. In this thesis, a series of researches have been carried out on how to realize the elasticity of semiconductor layer and electrode of organic thin film transistor and the fabrication of elastic stress sensor. The main work is as follows: 1) the properties and morphologies of P3HT/SIS mixtures under different tensile ratios were studied. It is found that with the increasing of the tensile ratio, the device performance decreases to a certain extent, the field effect mobility of the device is about 2.26 脳 10-3 cm2 V-1 s-1 before drawing, and the mobility of the device decreases slightly when the tensile ratio is 10 脳 10 ~ (-3). The mobility of the device decreases to 1 脳 10-3cm2 V-1 s-1 when stretching to 20; when stretching to 40, the mobility of the device decreases to 1 脳 10-3cm2 V-1 s-1; when stretching to 40, the mobility of the device decreases to 1 脳 10-3cm2 V-1 s-1. The device mobility is 9.3 脳 10 ~ (-4) cm2 V ~ (-1) -1s ~ (-1), and the semiconductor properties of the device basically disappear when stretching to 60 ~ (2).) the good dispersion properties are obtained by using sodium dodecyl sulfonate (SDSs) and poly (3o) 4- (ethylenedioxythiophene) / polystyrene sulfonate (PEDOT / PSS) as dispersants. Multiwalled carbon nanotubes solution, With the help of polydimethylsiloxane (PDMS), a hydrophilic region can be formed on the surface of silicon wafers, which can be used to fabricate patterned carbon nanotube thin film electrodes by solution method. Poly (3-hexylthiophene) organic thin film transistors were fabricated with patterned carbon nanotube electrodes. The device mobility obtained by using SDS and PEDOT/PSS as dispersant was 0.01cm2 V-1 s-1 and 0.0075 cm2 V-1 s-1, respectively, and the switching current ratio was 3 脳 10 3 路.0.The high elasticity of graphene oxide was obtained by reducing the adhesion of graphene oxide on polyurethane fiber. Scalable stress sensors. The resistance of the stress sensor changed by 1/4 when tensile to 50%. The morphology and stability of electrospun polyurethane fibers in the process of preparing sensors have also been studied. Highly flexible and scalable stress sensors have great potential in practical applications, for example in the field of human motion detection. This simple and cheap graphene layer can be used to prepare graphene strain sensors with excellent stability and electrical properties.
【學(xué)位授予單位】：合肥工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN605

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本文編號(hào)：1861211