本文選題：門極換流晶閘管 + 動(dòng)態(tài)雪崩　； 參考：《固體電子學(xué)研究與進(jìn)展》2017年02期

【摘要】：門極換流晶閘管(GCT)關(guān)斷過程中的動(dòng)態(tài)雪崩效應(yīng)是導(dǎo)致其失效的關(guān)鍵因素。本文采用Sentaurus仿真軟件對(duì)4 500V非對(duì)稱GCT關(guān)斷過程中的動(dòng)態(tài)雪崩效應(yīng)進(jìn)行了研究,建立了用于描述動(dòng)態(tài)雪崩過程中等離子體邊緣移動(dòng)速度的二維解析模型,分析了電流絲產(chǎn)生的原因及其影響因素,研究了GCT的失效機(jī)理。結(jié)果表明,GCT發(fā)生動(dòng)態(tài)雪崩時(shí)會(huì)產(chǎn)生單個(gè)縱向貫穿整個(gè)器件的電流絲,這是由p陽(yáng)極區(qū)的空穴注入所致,并且空穴注入會(huì)減慢電流絲的移動(dòng)速度,從而降低了GCT關(guān)斷的可靠性。
[Abstract]:The dynamic avalanche effect of gate commutation thyristor (GCT) is the key factor leading to its failure. In this paper, the dynamic avalanche effect during 4 500 V asymmetric GCT turn-off is studied by using Sentaurus simulation software, and a two-dimensional analytical model is established to describe the plasma edge moving velocity during dynamic avalanche. The causes and influencing factors of current wire are analyzed, and the failure mechanism of GCT is studied. The results show that when dynamic avalanche occurs, a single longitudinal current wire is produced through the whole device, which is caused by hole injection in the p anode region, and the hole injection will slow down the moving speed of the current wire, thus reducing the reliability of GCT turn-off.
【作者單位】： 西安理工大學(xué)自動(dòng)化與信息工程學(xué)院;
【基金】：國(guó)家自然科學(xué)基金資助項(xiàng)目(51477137,51077110) 陜西省工業(yè)攻關(guān)資助項(xiàng)目(2014K06-21)
【分類號(hào)】：TN34

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