發(fā)布時(shí)間：2018-05-07 02:40

  本文選題：仿真 + H-SiC��； 參考：《電子技術(shù)應(yīng)用》2017年01期

【摘要】：通過(guò)對(duì)雙凹柵結(jié)構(gòu)和階梯柵結(jié)構(gòu)4H-SiC MESFET的直流特性對(duì)比,得出階梯柵結(jié)構(gòu)的直流特性優(yōu)于雙凹柵結(jié)構(gòu)。對(duì)階梯柵結(jié)構(gòu)進(jìn)行極限化處理后,引出了坡形柵4H-SiC MESFET的結(jié)構(gòu)及其特征參數(shù)EP_(CG),通過(guò)仿真對(duì)比了坡形柵4H-SiC MESFET結(jié)構(gòu)EP_(CG)分別為1/4柵、1/2柵、3/4柵和全柵時(shí)的直流特性。結(jié)果表明,當(dāng)EP_(CG)為1/2柵時(shí),最大飽和漏電流取得最大值,在V_G=0 V、V_(DS)=40 V的條件下達(dá)到了545 mA;當(dāng)EPCG為1/4柵、3/4柵和全柵時(shí),最大飽和漏電流均不如EP_(CG)為1/2柵時(shí)取得的最大值。
[Abstract]:By comparing the DC characteristics of double concave gate structure and step gate structure 4H-SiC MESFET, it is concluded that the DC characteristic of step gate structure is better than that of double concave gate structure. After limiting the step gate structure, the structure and characteristic parameters of the slope gate 4H-SiC MESFET are derived. The DC characteristics of the slope gate 4H-SiC MESFET structure are compared when the 4H-SiC MESFET structure is 1 / 4 gate / 2 gate / 3 / 4 gate and full gate respectively. The results show that the maximum saturated leakage current reaches 545mAat 40 V at V_G=0 V / V, and when EPCG is 1 / 4 gate 3 / 4 gate and full gate, the maximum saturated leakage current is lower than that obtained at 1 / 2 gate when EPCG is 1 / 2 gate, and the maximum saturated leakage current is less than that at 1 / 2 gate when EPCG is 1 / 4 gate and 3 / 4 gate with EPCG of 1 / 4 gate.
【作者單位】： 航天科技集團(tuán)九院七七一研究所;
【分類號(hào)】：TN386

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本文編號(hào)：1855058