本文選題：高端MOS管 + 變壓器驅(qū)動(dòng)�。� 參考：《微電子學(xué)》2016年03期

【摘要】：高端MOS管驅(qū)動(dòng)電路在高壓輸入大功率電源中被廣泛應(yīng)用。分析了高端MOS管的驅(qū)動(dòng)原理,對影響高端MOS管驅(qū)動(dòng)的各種因素進(jìn)行了探討,提出了適合高端MOS管驅(qū)動(dòng)的基本方法。較全面地評估了傳統(tǒng)的變壓器驅(qū)動(dòng)電路和自舉驅(qū)動(dòng)電路對高端MOS管驅(qū)動(dòng)的影響,繼而提出了適合高端MOS管驅(qū)動(dòng)的線路結(jié)構(gòu),并采用該方案設(shè)計(jì)了一個(gè)實(shí)驗(yàn)電路。仿真和實(shí)驗(yàn)電路測試結(jié)果表明,設(shè)計(jì)電路滿足要求。
[Abstract]:High-end MOS drive circuit is widely used in high-voltage input power supply. In this paper, the driving principle of high end MOS tube is analyzed, the factors influencing the drive of high end MOS tube are discussed, and the basic method suitable for the drive of high end MOS tube is put forward. The influence of the traditional transformer drive circuit and bootstrap drive circuit on the high end MOS transistor drive is comprehensively evaluated. Then the circuit structure suitable for the high end MOS tube driving circuit is proposed and an experimental circuit is designed with this scheme. The simulation and experimental circuit test results show that the designed circuit meets the requirements.
【作者單位】： 中國電子科技集團(tuán)公司第二十四研究所;
【分類號】：TN386
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本文編號：1848097