發(fā)布時(shí)間：2018-05-05 06:11

  本文選題：集成電路工藝 + 集成光波導(dǎo)器件��； 參考：《吉林大學(xué)》2015年碩士論文

【摘要】：隨著通信業(yè)務(wù)的繁榮發(fā)展，人們對(duì)帶寬的需求變得更加迫切，為了加快實(shí)現(xiàn)超長(zhǎng)距離超大容量通信系統(tǒng)的步伐，光交叉復(fù)用器（Interleaver）引起了人們的廣泛關(guān)注并成為了密集波分復(fù)用領(lǐng)域的研究熱點(diǎn)。與常見的波分復(fù)用器相比，光交叉復(fù)用器的信道間隔更小，更滿足現(xiàn)代光纖通信系統(tǒng)對(duì)密集波分復(fù)用技術(shù)（DWDM）的要求，而將交叉復(fù)用器用于波分復(fù)用系統(tǒng)中既能夠有效地減輕后續(xù)WDM器件對(duì)波長(zhǎng)間隔要求的負(fù)擔(dān)，同時(shí)達(dá)到了提高傳輸容量的目的。實(shí)現(xiàn)交叉復(fù)用技術(shù)的方法有多種，其中陣列波導(dǎo)光柵型（AWG）型交叉復(fù)用器具有信道數(shù)多、串?dāng)_小、信號(hào)畸變小、結(jié)構(gòu)緊湊、易于集成和性能穩(wěn)定等諸多優(yōu)點(diǎn)，已成為新一代交叉復(fù)用產(chǎn)品研究和開發(fā)的熱點(diǎn)。 本文對(duì)光交叉復(fù)用集成波導(dǎo)器件展開了研究。設(shè)計(jì)了一種基于陣列波導(dǎo)光柵結(jié)構(gòu)的新型光交叉復(fù)用器件，并對(duì)其波導(dǎo)結(jié)構(gòu)參數(shù)進(jìn)行了仿真和優(yōu)化。在集成波導(dǎo)芯片中引入電極控制結(jié)構(gòu)，一方面實(shí)現(xiàn)對(duì)器件信道和信號(hào)波長(zhǎng)的雙重選擇功能，另外也對(duì)制備工藝帶來(lái)的陣列波導(dǎo)光柵中心波長(zhǎng)漂移具有補(bǔ)償作用。本論文中波導(dǎo)和電極的制備均采用的是CMOS集成電路制備工藝中的旋涂、光刻、刻蝕和真空蒸發(fā)工藝。本論文的主要工作可總結(jié)如下： （1）、提出了一種交叉復(fù)用集成波導(dǎo)模塊，該模塊在單芯片上混合集成了陣列波導(dǎo)光柵、多模干涉儀（MMI）和馬赫曾德爾干涉（MZI）型熱光開關(guān)。其中兩級(jí)陣列波導(dǎo)光柵的信道間隔分別為0.8nm和1.6nm，能夠?qū)?fù)合信號(hào)光中的奇數(shù)波長(zhǎng)和偶數(shù)波長(zhǎng)進(jìn)行選擇。同時(shí)，在陣列波導(dǎo)光柵和光開關(guān)中引入了控制電極，并對(duì)電極結(jié)構(gòu)參數(shù)進(jìn)行了計(jì)算和優(yōu)化，以實(shí)現(xiàn)對(duì)芯片局部波導(dǎo)溫度的精確控制，從而利用熱光效應(yīng)來(lái)實(shí)現(xiàn)對(duì)輸出信道及波長(zhǎng)的選擇功能。 （2）、自主合成了一種有機(jī)-無(wú)機(jī)接枝改性聚甲基丙烯酸甲酯（PMMA）材料。這種有機(jī)-無(wú)機(jī)復(fù)合材料具有熱穩(wěn)定性好、折射率可調(diào)節(jié)、與硅工藝兼容性好等優(yōu)勢(shì)，，非常適合于制備熱光器件。另外，對(duì)新型氟化光敏聚合物材料的波導(dǎo)制備工藝參數(shù)進(jìn)行了摸索和優(yōu)化，并利用直接光刻法獲得了形貌良好的矩形波導(dǎo)結(jié)構(gòu)。同時(shí)測(cè)試了材料的折射率調(diào)節(jié)范圍，以及其在近紅外區(qū)的吸收光譜特性，結(jié)果證明在光通訊波長(zhǎng)范圍內(nèi)材料的吸收非常低，與常用的光刻膠材料SU-8相比，其光學(xué)損耗顯著降低，這更加有利于降低集成波導(dǎo)芯片的傳輸損耗。 （3）、利用氟化光敏聚合物材料和有機(jī)-無(wú)機(jī)復(fù)合型材料分別作為波導(dǎo)的芯層和包層，采用集成電路制備工藝中典型的光刻、刻蝕和真空蒸發(fā)工藝完成了集成波導(dǎo)芯片的制備，并對(duì)其進(jìn)行了測(cè)試。輸入-輸出單模光纖之間的總插入損耗在5.55dB-6.86dB范圍內(nèi)（對(duì)于單個(gè)信道），信道串?dāng)_約為-25dB。加載在陣列波導(dǎo)處的蛇形電極結(jié)構(gòu)用于調(diào)控陣列波導(dǎo)光柵的輸出波長(zhǎng)矩陣，以實(shí)現(xiàn)集成波導(dǎo)芯片的波長(zhǎng)信道選擇功能，測(cè)得電極阻值約為800Ω，對(duì)于一級(jí)AWG和二級(jí)AWG來(lái)說(shuō)，其傳輸波長(zhǎng)矩陣實(shí)現(xiàn)一次行向量平移所需的驅(qū)動(dòng)電功率分別為10.5mW和6.5mW（對(duì)于單個(gè)信道）。MZI型熱光開關(guān)的電極阻值約為200Ω，測(cè)得開關(guān)的消光比為18.2dB，驅(qū)動(dòng)功率約為8.6mW。
[Abstract]:With the prosperity and development of communication services, the demand for bandwidth becomes more urgent. In order to speed up the pace of realizing ultra long distance and super large capacity communication system, optical cross multiplexer (Interleaver) attracts people's attention and becomes a hot topic in the field of dense wavelength division multiplexing. The channel interval of the multiplexer is smaller and meets the requirements of the modern optical fiber communication system for dense wavelength division multiplexing (DWDM), and the application of the cross multiplexer to the wavelength division multiplexing system can not only effectively reduce the burden on the wavelength interval of the subsequent WDM devices, but also achieve the purpose of raising the transmission capacity. There are many methods, in which the array waveguide grating (AWG) type cross multiplexer has many advantages, such as many channels, small crosstalk, small signal distortion, compact structure, easy integration and performance stability. It has become a hot spot in the research and development of a new generation of cross multiplexed products.
The optical cross multiplexed integrated waveguide devices are studied in this paper. A new type of optical cross multiplexing device based on the array waveguide grating is designed, and the parameters of the waveguide structure are simulated and optimized. The electrode control structure is introduced in the integrated waveguide chip. On the one hand, the dual choice work of the channel and the signal wavelength is realized. In this paper, the preparation of waveguides and electrodes in this paper is used in the process of CMOS integrated circuit fabrication, such as spin coating, lithography, etching and vacuum evaporation. The main work of this paper can be summarized as follows:
(1) a cross multiplexed integrated waveguide module is proposed, which combines array waveguide grating, multimode interferometer (MMI) and Maher Del interference (MZI) type hot light switch on a single chip, in which the channel interval of the two stage arrayed waveguide grating is 0.8nm and 1.6nm, which can be used for odd and even wavelengths in the composite signal light. At the same time, the control electrode is introduced into the arrayed waveguide grating and optical switch, and the electrode structure parameters are calculated and optimized to realize the precise control of the local waveguide temperature of the chip, thus the selection function of the output channel and wavelength is realized by using the thermal optical effect.
(2) an organic-inorganic graft modified polymethyl methacrylate (PMMA) material has been synthesized independently. The organic inorganic composite has the advantages of good thermal stability, adjustable refractive index and good compatibility with the silicon process. It is very suitable for the preparation of thermo optical devices. In addition, the preparation process parameters of the novel fluorinated photosensitive polymer materials are prepared. A rectangular waveguide structure with good morphology was obtained by direct photolithography. The refractive index range of the material was measured and its absorption spectrum in the near infrared region was measured. The results showed that the absorption of the material was very low in the wavelength range of the optical communication. Compared with the common photoresist SU-8, the optical loss of the material was compared. The consumption is significantly reduced, which is more conducive to reducing the transmission loss of integrated waveguide chips.
(3) using the fluorinated photosensitive polymer material and the organic inorganic composite material as the core layer and the cladding of the waveguide respectively, the integrated circuit fabrication process is used for the typical lithography. The etching and vacuum evaporation process completed the preparation of the integrated waveguide chip and tested it. The total insertion loss between the input and output single mode fiber is 5.55. In the range of dB-6.86dB (for a single channel), the channel crosstalk is about -25dB. loaded in the array waveguide, the snake shaped electrode structure is used to regulate the output wavelength matrix of the arrayed waveguide grating to realize the wavelength channel selection function of the integrated waveguide chip. The measured electrode obstruction value is about 800 Omega. For the first order AWG and the two level AWG, the transmission wavelength moment is obtained. The driving power required for a row vector translation is 10.5mW and 6.5mW (for a single channel).MZI type.MZI thermo optical switch is about 200 Omega, the extinction ratio of the switch is 18.2dB, and the driving power is about 8.6mW..

【學(xué)位授予單位】：吉林大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN252

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