本文選題：硅基微通道板 + 二次電子發(fā)射　； 參考：《深圳大學(xué)》2015年碩士論文

【摘要】：微通道板(Micro-channel plate,MCP)是一種二維連續(xù)電子倍增的電真空器件,由許多具有連續(xù)電子倍增能力的通道按一定的幾何圖案排列而成。當(dāng)在其輸入、輸出兩端加上一定的電場(chǎng)時(shí),就能對(duì)極其微弱的二維電子圖像進(jìn)行倍增或放大。然而,在90年代以后美國伽利略公司提出的一種全新的半導(dǎo)體技術(shù),它就是先進(jìn)技術(shù)微通道板,它最大的突破就是把基體材料和打拿極材料分開,同時(shí)微孔陣列制備和連續(xù)打拿極制備技術(shù)分開,因此微通道板的運(yùn)用更加寬廣,制備工藝更加靈活。目前,由于硅材料廣泛應(yīng)用于大規(guī)模集成電路領(lǐng)域,人們對(duì)它的研究相對(duì)深入,并且制備技術(shù)較成熟,吸引了大量的科研人員對(duì)硅基微通道板刻蝕工藝和打拿極制作的研究。本論文中,首先廣泛調(diào)研相關(guān)文獻(xiàn),掌握硅基微通道板的結(jié)構(gòu)特點(diǎn)、發(fā)展類型以及工作原理;然后通過對(duì)微通道板增益特性分析與通道內(nèi)二次電子發(fā)射機(jī)理研究,建立數(shù)學(xué)理論模型,采用MATLAB進(jìn)行模擬,從理論上分別分析了二次電子發(fā)射特性以及MCP電流增益跟各因素之間的關(guān)系;接著為了探究硅基微通道板提高增益的方法,從次級(jí)電子發(fā)射體選擇和優(yōu)化打拿極結(jié)構(gòu)兩方面出發(fā),分析了幾種不同二次電子發(fā)射層材料(以Mg O、Al2O3、Si O2薄膜為例)的二次電子發(fā)射特性,提出了絕緣層-導(dǎo)電層-第一發(fā)射層-第二發(fā)射層的打拿極結(jié)構(gòu),通過理論分析打拿極各層較好的材料選擇,對(duì)打拿極每一層結(jié)構(gòu)的厚度進(jìn)行優(yōu)化;最后,在制作工藝上,利用本所現(xiàn)有的PECVD(等離子增強(qiáng)化學(xué)氣相沉積)設(shè)備、勻膠機(jī)、光刻機(jī)(適用于3英寸及以下硅片)、RIE機(jī)(OXFORD Plasmalab 80Plus)、IPC刻蝕機(jī)等設(shè)備,完成對(duì)硅基MCP的刻蝕。采用熱氧化工藝、原子層沉積技術(shù)制備打拿極的各層材料,得到硅基微通道板樣品。最后,初步探究了利用LGW飛秒激光器打孔制備硅深孔陣列的實(shí)驗(yàn)方法,證明激光打孔方法的可行性。
[Abstract]:Micro-Channel Plate (MCP) is a two-dimensional continuous electron multiplication vacuum device, which is made up of many channels with continuous electron multiplication ability arranged according to certain geometric patterns. When a certain electric field is applied to the input and output, the extremely weak two-dimensional electronic image can be multiplied or amplified. However, after the 1990s, the Galileo Company of the United States put forward a new kind of semiconductor technology, which is the advanced technology microchannel board. Its biggest breakthrough is to separate the matrix material from the take-away material. At the same time, the fabrication of microporous array is separated from that of continuous drawing, so the application of microchannel plate is wider and the preparation process is more flexible. At present, because silicon materials are widely used in the field of large scale integrated circuits, the research on silicon materials is relatively deep, and the preparation technology is relatively mature, which attracts a large number of researchers to study the etching process and the making of electrodes of silicon based microchannel plates. In this thesis, we firstly investigate the relevant literature, and master the structure characteristics, development types and working principle of silicon based microchannel plate, and then analyze the gain characteristics of microchannel plate and the mechanism of secondary electron emission in the channel. The mathematical model was established and simulated by MATLAB. The characteristics of secondary electron emission and the relationship between MCP current gain and various factors were analyzed theoretically. Based on the selection of secondary electron emitters and the optimization of the structure of the secondary electron emitters, the secondary electron emission characteristics of several different secondary electron emitter layers (taking MgO _ 2O _ 3 Al _ 2O _ 3 Si _ 2O _ 2 film as an example) are analyzed. In this paper, the structure of the dielectric layer, the conductive layer, the first emitter layer and the second emitter layer is proposed. The thickness of each layer structure is optimized through theoretical analysis of the better material selection of each layer. Finally, in the manufacturing process, Using the existing PECVD (Plasma enhanced Chemical Vapor deposition) equipment, leveling machine, lithography machine (suitable for 3 inch or less silicon wafer / lie machine / OXFORD Plasmalab 80Plus / IPC etching machine, etc.), the etching of silicon-based MCP has been completed. Si-based microchannel plate samples were prepared by thermal oxidation and atomic layer deposition. Finally, the experimental method of fabricating silicon deep hole array by LGW femtosecond laser drilling is discussed, and the feasibility of laser drilling method is proved.
【學(xué)位授予單位】：深圳大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN103

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