發(fā)布時(shí)間：2018-04-30 11:55

  本文選題：GaN + HEMT��； 參考：《西安電子科技大學(xué)》2015年碩士論文

【摘要】：GaN高電子遷移率晶體管(HEMT)具有高功率密度、高擊穿電壓、高輸出功率等優(yōu)良特性,被認(rèn)為是下一代微波功率器件極具潛力的候選者,成為近年來(lái)研究的熱點(diǎn)�；贕aN HEMT研制的單片微波功率放大器具有高輸出功率、高工作電壓、頻帶寬等特點(diǎn),已經(jīng)廣泛用于相控陣?yán)走_(dá),無(wú)線(xiàn)通訊技術(shù)和航空航天等領(lǐng)域中。本論文針對(duì)AlGaN/GaN HEMT功率器件以及GaN MMIC功率放大器的設(shè)計(jì)進(jìn)行了深入研究,實(shí)現(xiàn)了一款X波段兩級(jí)GaN MMIC功率放大器,主要的研究?jī)?nèi)容和成果如下:1.基于實(shí)驗(yàn)室自主研制的AlGaN/GaN HEMT器件,分析了GaN HEMT器件的基本理論,并對(duì)器件的性能進(jìn)行了測(cè)試和分析,建立了該器件的小信號(hào)等效電路模型,為驗(yàn)證此模型,獲得了S參數(shù)的測(cè)試結(jié)果和模型仿真結(jié)果,此二者的吻合度較高,表明采用的22元件小信號(hào)模型精確、穩(wěn)定而且物理意義明確。2.研究了GaN MMIC功率放大器的主要性能指標(biāo)和設(shè)計(jì)原理,采用了S參數(shù)結(jié)合LoadPull測(cè)試結(jié)果的綜合設(shè)計(jì)方法,解決了GaN HEMT微波功率放大器設(shè)計(jì)中晶體管無(wú)成熟大信號(hào)模型的問(wèn)題,為電路的設(shè)計(jì)提供了技術(shù)支持。3.總結(jié)了GaN MMIC功率放大器的設(shè)計(jì)流程和拓?fù)浣Y(jié)構(gòu),設(shè)計(jì)實(shí)現(xiàn)了一款具有平坦增益的兩級(jí)GaN MMIC功率放大器。采用低通匹配網(wǎng)絡(luò)設(shè)計(jì),使放大器輸入輸出匹配到50?,最終的電磁場(chǎng)仿真結(jié)果表明,該電路在9.0-10.2GHz工作頻率范圍內(nèi)小信號(hào)增益S21為23(?)0.5dB,輸入反射系數(shù)S11小于-8dB,輸出反射系數(shù)S22小于-6dB,且該電路在全頻帶內(nèi)的仿真穩(wěn)定因子顯示其具有良好的穩(wěn)定性。最后對(duì)微帶線(xiàn)進(jìn)行了合理的布局,畫(huà)出了相應(yīng)的版圖結(jié)構(gòu),并依據(jù)實(shí)驗(yàn)室現(xiàn)有的工藝水平,提出了實(shí)現(xiàn)MMIC功率放大器的工藝方法,并對(duì)相關(guān)工藝的關(guān)鍵點(diǎn)進(jìn)行分析。
[Abstract]:GaN (High Electron Mobility Transistor) is a promising candidate for the next generation microwave power devices due to its high power density, high breakdown voltage and high output power. The monolithic microwave power amplifier based on GaN HEMT has been widely used in phased array radar, wireless communication technology, aerospace and other fields because of its high output power, high working voltage, frequency bandwidth and so on. In this paper, the design of AlGaN/GaN HEMT power devices and GaN MMIC power amplifiers is studied, and an X-band two-stage GaN MMIC power amplifier is implemented. The main research contents and results are as follows: 1. Based on the AlGaN/GaN HEMT device developed by the laboratory, the basic theory of GaN HEMT device is analyzed, the performance of the device is tested and analyzed, and the small signal equivalent circuit model of the device is established to verify the model. The test results of S parameters and the simulation results are obtained, which show that the 22 components small signal model is accurate, stable and physical meaning is clear. 2. The main performance index and design principle of GaN MMIC power amplifier are studied. The synthesis design method of S parameter combined with LoadPull test result is adopted to solve the problem that transistor has no mature large signal model in the design of GaN HEMT microwave power amplifier. It provides technical support for circuit design. The design flow and topology of GaN MMIC power amplifier are summarized. A two-stage GaN MMIC power amplifier with flat gain is designed and implemented. A low-pass matching network is used to match the input and output of the amplifier to 50g. The simulation results show that, The small signal gain S21 is 0.5 dB in the 9.0-10.2GHz operating frequency range, the input reflection coefficient S11 is less than -8 dB, and the output reflection coefficient S22 is less than -6 dB. The simulation stability factor of the circuit in the full frequency band shows that the circuit has good stability. Finally, the reasonable layout of the microstrip line is given, and the corresponding layout structure is drawn. According to the existing technology level in the laboratory, the process method of realizing the MMIC power amplifier is put forward, and the key points of the related technology are analyzed.
【學(xué)位授予單位】：西安電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類(lèi)號(hào)】：TN722.75;TN386

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