本文選題：測(cè)量 + 紅外測(cè)溫　； 參考：《激光與光電子學(xué)進(jìn)展》2017年11期

【摘要】：根據(jù)紅外測(cè)溫原理、薄膜等厚干涉模型及相關(guān)光學(xué)參數(shù),在Al2O3、SiC、Si三種襯底上用金屬有機(jī)物化學(xué)氣相沉積(MOCVD)技術(shù)制備10μm GaN外延層的過(guò)程中,對(duì)940nm單色測(cè)溫、1550nm單色測(cè)溫、940nm/1550nm比色測(cè)溫的發(fā)射率引起表觀溫度誤差、真實(shí)溫度與表觀溫度偏差進(jìn)行理論比較。利用Si(111)襯底上制備InGaN/GaN多量子阱(MQW)藍(lán)光發(fā)光二極管(LED)外延片過(guò)程的940nm單色測(cè)溫及940nm/1550nm比色測(cè)溫結(jié)果,驗(yàn)證該建模及計(jì)算的正確性。研究結(jié)果表明:在500~1300℃,相同測(cè)溫法在不同襯底間表觀溫度誤差系數(shù)區(qū)別不大。相同襯底下,誤差系數(shù)由小到大依次為:比色測(cè)溫、940nm單色測(cè)溫、1550nm單色測(cè)溫。相同測(cè)溫法在不同襯底間真實(shí)溫度與表觀溫度偏差較大。相同襯底下,偏差結(jié)果由小到大依次為:比色測(cè)溫、1550nm單色測(cè)溫、940nm單色測(cè)溫。該計(jì)算方法與結(jié)論可為紅外測(cè)溫設(shè)備的研發(fā)、不同襯底GaN基外延測(cè)溫方法的選擇提供借鑒與參考。
[Abstract]:According to the principle of infrared temperature measurement, the thin film equal thickness interference model and related optical parameters, the 10 渭 m GaN epitaxial layer was prepared on three kinds of substrates of Al _ 2O _ 3, Si _ 2O _ 3 and Si by metal-organic chemical vapor deposition (MOCVD) technique. The emissivity of 940nm monochromatic temperature measurement with 1550nm monochromatic temperature measurement at 940nm / 1550nm caused the apparent temperature error and the deviation between the real temperature and the apparent temperature was compared theoretically. The results of 940nm monochromatic temperature measurement and 940nm/1550nm colorimetric thermometry of InGaN/GaN multiple quantum well (MQW) blue light-emitting diode (LED) epitaxial wafers prepared on Si _ (111) substrate verify the correctness of the modeling and calculation. The results show that there is little difference in apparent temperature error coefficient between different substrates by the same temperature measurement method at 500 ~ 1300 鈩，

本文編號(hào)：1812615