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高功率半導(dǎo)體激光熱特性分析與熱管理技術(shù)研究

發(fā)布時間:2018-04-27 05:23

  本文選題:半導(dǎo)體激光器 + 熱特性 ; 參考:《長春理工大學(xué)》2017年碩士論文


【摘要】:半導(dǎo)體激光器憑借體積、重量、壽命及效率等方面優(yōu)勢,在工業(yè)、科研、醫(yī)療以及軍事等領(lǐng)域被廣泛應(yīng)用。伴隨著輸出功率的提高,產(chǎn)生的廢熱也在不斷增加,而半導(dǎo)體激光器的諸多性能都受到熱效應(yīng)制約。所以,對高功率器件的熱特性以及熱管理技術(shù)的分析研究具有十分重要的意義。本文從熱特性分析的理論出發(fā),分析了半導(dǎo)體激光器內(nèi)部的產(chǎn)熱機制,傳熱機理以及器件的溫升對閾值電流、輸出功率、斜率效率、波長和壽命的影響。采用有限元數(shù)值模擬的方法,分別利用ANSYS和Solidworks Simulation對單管、多單管以及巴條半導(dǎo)體激光器的熱特性進行模擬分析。首先,對于單個發(fā)光單元器件,利用ANSYS有限元軟件對COS、C-Mount兩種封裝形式的單芯片半導(dǎo)體激光器的熱特性進行分析。對COS封裝的兩種貼片形式進行模擬,從熱沉的角度分析了倒裝芯片溫度較低的原因,針對不同的熱沉材料,改變其導(dǎo)熱率,得到了不同器件的熱阻;對C-Mount模型的兩種建模方式進行對比,通過改變C-Mount熱沉的厚度,得到了芯片溫度的變化規(guī)律,并從熱流的角度進行分析。通過引入導(dǎo)熱性能良好的金剛石膜與石墨烯膜,設(shè)計了一種較為理想的C-Mount復(fù)式散熱結(jié)構(gòu)。接下來,對于復(fù)雜的含有多個發(fā)光單元的半導(dǎo)體激光器模型,使用Solidworks Simulation軟件進行模擬。分析了多單管半導(dǎo)體激光模塊在連續(xù)(CW)狀態(tài)下的穩(wěn)態(tài)熱行為,深入討論了占空比對熱串?dāng)_行為的影響;最后,針對被動式制冷半導(dǎo)體Bar條熱應(yīng)力分布不均導(dǎo)致的“Smile效應(yīng)”進行分析,建立CS傳導(dǎo)冷卻激光器模型,通過優(yōu)化熱沉散熱結(jié)構(gòu)改變溫度分布,進而達到Bar條溫度均勻化目的。
[Abstract]:Semiconductor lasers are widely used in industrial, scientific, medical and military fields due to their advantages in volume, weight, life and efficiency. With the increase of output power, the waste heat is also increasing, and many properties of semiconductor lasers are restricted by thermal effect. Therefore, it is of great significance to analyze the thermal characteristics and thermal management technology of high power devices. Based on the theory of thermal characteristic analysis, the mechanism of heat production, heat transfer mechanism and the effect of temperature rise on threshold current, output power, slope efficiency, wavelength and lifetime of semiconductor laser are analyzed in this paper. The thermal characteristics of single-tube, multi-tube and bar-bar semiconductor lasers are simulated and analyzed by using finite element numerical simulation method and ANSYS and Solidworks Simulation, respectively. Firstly, the thermal characteristics of single chip semiconductor lasers with two packaging forms are analyzed by ANSYS finite element software. In this paper, two kinds of COS packaging are simulated, and the reason of low temperature is analyzed from the point of view of heat sink. According to different heat sink materials, the thermal resistance of different devices is obtained by changing their thermal conductivity. By comparing the two modeling methods of C-Mount model, the variation law of chip temperature is obtained by changing the thickness of C-Mount heat sink, and the heat flux is analyzed. An ideal C-Mount compound heat dissipation structure was designed by introducing diamond film and graphene film with good thermal conductivity. Then, the complex model of semiconductor laser with multiple luminescent cells is simulated by Solidworks Simulation software. The steady-state thermal behavior of multi-transistor semiconductor laser modules under CW state is analyzed, and the effect of duty cycle on the thermal crosstalk behavior is discussed. The "Smile effect" caused by the uneven distribution of thermal stress in passive cooling semiconductor Bar strip is analyzed, and a CS conduction cooling laser model is established. The temperature distribution is changed by optimizing the heat sink structure, and the temperature uniformity of the Bar strip is achieved.
【學(xué)位授予單位】:長春理工大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2017
【分類號】:TN248.4

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本文編號:1809379


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