本文選題：垂直腔面發(fā)射激光器(VCSEL) + 單模　； 參考：《半導(dǎo)體技術(shù)》2017年01期

【摘要】：針對銣原子能級躍遷對光譜的特殊需求,設(shè)計(jì)并制備了795 nm單模垂直腔面發(fā)射激光器(VCSEL)。根據(jù)對VCSEL的光場和模式的分析和計(jì)算結(jié)果,設(shè)計(jì)了單模VCSEL芯片結(jié)構(gòu)。采用MOCVD技術(shù)生長了外延結(jié)構(gòu),制備了不同有源區(qū)直徑的氧化限制型VCSEL芯片并進(jìn)行了測試。當(dāng)有源區(qū)直徑從6μm減小到3μm時(shí),VCSEL芯片的邊模抑制比(SMSR)由8.76 d B增加到34.05 d B,閾值電流由0.77 m A減小到0.35 m A。有源區(qū)直徑為6,5,4和3μm的VCSEL芯片的輸出功率分別為0.37,0.46,0.58和0.44 m W,有源區(qū)直徑為4μm的VCSEL芯片的遠(yuǎn)場為圓形光束,發(fā)散角為15°。85℃時(shí)3.5μm有源區(qū)直徑的VCSEL芯片輸出功率為0.125 m W,激射波長為795.3 nm。室溫3 d B帶寬大于8 GHz,滿足了銣原子傳感器對VCSEL單模光譜、輸出功率及調(diào)制速率的要求。
[Abstract]:A single mode vertical cavity surface emitting laser (VCSELL) at 795nm was designed and fabricated to meet the special spectral requirements of rubidium atomic transition. According to the analysis and calculation results of the light field and mode of VCSEL, a single mode VCSEL chip structure is designed. The epitaxial structure was grown by MOCVD technique, and the oxidation limiting VCSEL chips with different active region diameters were fabricated and tested. When the diameter of the source region decreases from 6 渭 m to 3 渭 m, the side mode rejection ratio (SMSRR) of VCSEL chip increases from 8.76 dB to 34.05 dB, and the threshold current decreases from 0.77 Ma to 0.35 Ma. The output power of VCSEL chip with active zone diameter of 6 渭 m and 3 渭 m is 0.37 渭 m and 0.44 MW, respectively. The far-field of VCSEL chip with active zone diameter of 4 渭 m is circular beam. When the divergence angle is 15 擄.85 鈩，

本文編號：1807211