硅通孔結(jié)構(gòu)熱力耦合數(shù)值分析
發(fā)布時間:2018-04-26 16:14
本文選題:硅通孔 + 熱力耦合; 參考:《大連交通大學(xué)》2015年碩士論文
【摘要】:伴隨著科技的進步,電子器件逐漸朝著集成化、微型化的方向發(fā)展,熱問題越來越受業(yè)界關(guān)注,熱效應(yīng)帶來電子器件性能不穩(wěn)定、失效甚至損壞等一系列問題。當(dāng)前集成電路熱設(shè)計中主要以傳統(tǒng)的實驗與數(shù)值仿真補充相結(jié)合的方法。針對TSV封裝結(jié)構(gòu),建立數(shù)值分析模型,利用有限元軟件進行穩(wěn)態(tài)和瞬態(tài)熱力耦合分析。通過數(shù)值分析,尋找溫度、應(yīng)力和應(yīng)變的峰值及其分布規(guī)律,探討了不同功率循環(huán)加載以及變形封裝結(jié)構(gòu)耦合效應(yīng)特點,并對分析結(jié)果進行對比。此外,還考慮各項參數(shù)的不確定性,分別進行單一和多個參數(shù)組合的區(qū)間不確定分析,得到TSV模型熱力耦合不確定性區(qū)間響應(yīng)。針對TSV模型加載后的熱問題,本文分別討論了不同TSV模型結(jié)構(gòu)的熱力耦合效應(yīng),探討相關(guān)因素的影響,開展以下幾個方面的工作,研究內(nèi)容主要包括:(1)針對常用硅通孔疊層封裝的熱問題,利用有限元軟件,進行穩(wěn)態(tài)熱力耦合分析,討論了峰值及其位置分布,并對不同結(jié)構(gòu)的熱力耦合分析結(jié)果進行對比。(2)利用穩(wěn)態(tài)分析中TSV模型的十個節(jié)點溫度,采用蟻群尋源方法對封裝體熱源進行識別分析。(3)針對實際中循環(huán)加載的不同階段工況,對多熱源TSV疊層封裝進行了瞬態(tài)熱力耦合分析。通過討論大功率和小功率循環(huán)加載情況,對模型熱力耦合效應(yīng)進行分析,進一步探討了不同孔間距和形狀的封裝體耦合效應(yīng)特點,并進行結(jié)果對比,尋求可能的對應(yīng)關(guān)系。(4)針對TSV封裝模型中不確定性參數(shù)問題,通過結(jié)合區(qū)間有限元方法與區(qū)間攝動理,分別對單一和多個參數(shù)組合進行區(qū)間不確定性分析,得到TSV模型熱力耦合不確定性區(qū)間響應(yīng)。通過對TSV封裝的熱效應(yīng)問題進行確定性和不確定性研究,分析了不同TSV結(jié)構(gòu)對其熱效應(yīng)的影響程度以及參數(shù)不確定性的影響,相關(guān)研究結(jié)論可作為參考依據(jù)應(yīng)用于TSV模型結(jié)構(gòu)優(yōu)化設(shè)計中,尤其在熱設(shè)計方面。
[Abstract]:With the progress of science and technology, electronic devices are gradually developing towards the direction of integration and miniaturization. The heat problem has been paid more and more attention by the industry. The thermal effect has brought about a series of problems such as instability, failure and even damage of electronic devices. At present, the thermal design of integrated circuits is mainly based on the combination of traditional experiments and numerical simulation. A numerical analysis model is established for TSV packaging structure, and the steady and transient thermal coupling analysis is carried out by finite element software. Through numerical analysis, the peak value and distribution of temperature, stress and strain are found, and the characteristics of coupling effect of different power cyclic loading and deformed package structure are discussed, and the results are compared. In addition, considering the uncertainty of each parameter, the interval uncertainty analysis of single or multiple parameter combinations is carried out, and the interval response of TSV model with thermodynamic coupling uncertainty is obtained. In view of the heat problem of TSV model after loading, this paper discusses the thermo-mechanical coupling effect of different TSV model structures, discusses the influence of relevant factors, and carries out the following work. The main research contents include: (1) aiming at the thermal problem of common silicon through hole laminated packaging, the steady-state thermo-mechanical coupling analysis is carried out by using finite element software, and the peak value and its location distribution are discussed. The results of thermal-mechanical coupling analysis of different structures are compared. (2) using the ten node temperature of TSV model in steady-state analysis, and identifying and analyzing the heat source of package by means of ant colony source finding method, the paper aims at the different stages of cyclic loading in practice. Transient thermal coupling analysis of multi-heat source TSV laminated package is carried out. By discussing the high power and low power cyclic loading, the coupled effect of the model is analyzed, and the characteristics of the coupling effect of the package with different hole spacing and shape are discussed, and the results are compared. In order to solve the uncertain parameter problem in TSV packaging model, the interval uncertainty analysis is carried out by combining interval finite element method with interval perturbation theorem. The interval response of TSV model with thermodynamic coupling uncertainty is obtained. By studying the certainty and uncertainty of thermal effect of TSV package, the influence degree of different TSV structure on thermal effect and the influence of parameter uncertainty are analyzed. The relevant conclusions can be used as a reference for structural optimization design of TSV model, especially in thermal design.
【學(xué)位授予單位】:大連交通大學(xué)
【學(xué)位級別】:碩士
【學(xué)位授予年份】:2015
【分類號】:TN603
【參考文獻】
相關(guān)碩士學(xué)位論文 前4條
1 靳永欣;集成電路芯片封裝的熱—結(jié)構(gòu)數(shù)值模擬分析及優(yōu)化設(shè)計[D];大連理工大學(xué);2004年
2 謝勁松;多芯片組件熱分析及熱設(shè)計技術(shù)研究[D];電子科技大學(xué);2005年
3 袁琰紅;硅通孔三維封裝的熱力學(xué)分析[D];上海交通大學(xué);2013年
4 李瑋;硅通孔界面應(yīng)力分析[D];北京工業(yè)大學(xué);2013年
,本文編號:1806741
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