發(fā)布時(shí)間：2018-04-24 07:11

  本文選題：化學(xué)機(jī)械拋光 + 電化學(xué)　； 參考：《微電子學(xué)》2017年04期

【摘要】：化學(xué)機(jī)械拋光(CMP)工藝是IC工藝中大馬士革工序的關(guān)鍵步驟。拋光液的電化學(xué)行為研究對(duì)拋光質(zhì)量的控制具有重要意義。采用電化學(xué)測(cè)試手段,研究堿性拋光液中氧化劑(H_2O_2)對(duì)銅表面鈍化膜的成膜影響,分析H_2O_2對(duì)拋光速率、表面粗糙度的影響機(jī)理。通過(guò)實(shí)驗(yàn)確定,在0.5%SiO_2磨料和3%表面活性劑的堿性拋光液中,添加0.5%的H_2O_2和3%的FA/OⅡ型螯合劑可獲得大于800 nm/min的高拋光速率和表面粗糙度為22.2 nm的較佳平坦效果。
[Abstract]:Chemical mechanical polishing (CMP) process is the key step of Damascus process in IC process. The study of the electrochemical behavior of polishing solution is of great significance to the quality control of polishing. The effect of oxidizer (H _ 2O _ 2) in alkaline polishing solution on the formation of passivated film on copper surface was studied by electrochemical measurement. The influence mechanism of H_2O_2 on polishing rate and surface roughness was analyzed. It is determined by experiments that the addition of 0.5% H_2O_2 and 3% FA/O 鈪，

本文編號(hào)：1795661