本文選題：X波段 + 基片集成波導(dǎo)(SIW)�。� 參考：《電子科技大學(xué)》2015年碩士論文

【摘要】：通信行業(yè)社會(huì)現(xiàn)代化發(fā)展和人們的生活帶來了極大的便利,目前已經(jīng)進(jìn)入了4G時(shí)代,5G已經(jīng)提上研發(fā)日程。而在通信系統(tǒng)中作為收發(fā)、隔離、開關(guān)等作用的環(huán)形器則有著非常重要的地位。環(huán)形器的設(shè)計(jì)方法、理論、工具在不斷發(fā)展,性能也在不斷提高。目前微波鐵氧體環(huán)形器向著大功率,小型化,寬帶化,高可靠性方向發(fā)展,特別是微波通信、能源技術(shù)、國(guó)防航天等領(lǐng)域。由于波導(dǎo)具有體積和造價(jià)的缺陷、微帶線有輻射和功率的缺陷,日益滿足不了微波技術(shù)高功率、低損耗、小體積、低成本的需求。由此人們發(fā)現(xiàn)了更有優(yōu)勢(shì)的基片集成波導(dǎo)(Substrate Integrated Waveguide,簡(jiǎn)稱SIW)技術(shù)。SIW技術(shù)兼有矩形波導(dǎo)和微帶器件的優(yōu)點(diǎn),具有低輻射和插損、高Q值、高功率容量、小型化等特點(diǎn)。可以采用PCB或LTCC工藝將無源、有源器件集成在同一襯底上,減少了由不同工藝制作的器件間的連接轉(zhuǎn)換,實(shí)現(xiàn)系統(tǒng)良好的集成,適合大批量生產(chǎn)和應(yīng)用。為了研制出可實(shí)際應(yīng)用的高性能X波段基片集成波導(dǎo)環(huán)形器,本文在以下幾個(gè)方面做了研究:(1)首先根據(jù)理論推導(dǎo)和仿真實(shí)驗(yàn),得到電氣參數(shù)為:駐波比VSWR小于1.2、插入損耗小于0.4dB、回波損耗與隔離度均大于20dB的Y結(jié)SIW環(huán)形器。(2)通過研究SIW與微帶線的匹配技術(shù),將Y結(jié)環(huán)形器轉(zhuǎn)化為T型環(huán)形器,設(shè)計(jì)出了性能優(yōu)越且易于集成的小型化T結(jié)SIW環(huán)形器,在X波段內(nèi),回波損耗和隔離度大于20d B,插入損耗小于0.5 d B,器件尺寸為12mm×12mm×0.635mm。(3)設(shè)計(jì)了圓柱型鐵氧體X波段環(huán)形器同樣達(dá)到了技術(shù)指標(biāo),驗(yàn)證了本文中基片集成波導(dǎo)環(huán)形器設(shè)計(jì)方法的有效性。(4)對(duì)三角形鐵氧體柱環(huán)形器進(jìn)行了容差分析,分析了各主要參數(shù)變化對(duì)于器件性能的影響,這對(duì)于器測(cè)試和改進(jìn)具有較大指導(dǎo)意義。(5)通過對(duì)帶狀線夾具測(cè)試原理、器件裝配工藝的研究,制備出了X波段基片集成波導(dǎo)環(huán)形器樣品并進(jìn)行測(cè)試。樣品體積為:12mm×12mm×0.635mm。整個(gè)X波段回波損耗大于10 dB,隔離損耗大于5 dB。在10 GHz中心附近,回波損耗小于20dB,插入損耗小于1 dB,隔離大于20 dB的帶寬大于1GHz。本文建立了比較完整的基片集成波導(dǎo)環(huán)形器設(shè)計(jì)體系,在微波元器件、集成電路等方面有著廣泛的應(yīng)用前景。
[Abstract]:The modernization of communication industry and people's life have brought great convenience. At present, 5G has entered the 4G era and has been put on the research and development agenda. In the communication system, as a transceiver, isolator, switch and so on, the loop plays a very important role. The design method, theory and tool of annular device are developing and the performance is improving. At present, microwave ferrite circulators are developing towards high power, miniaturization, broadband and high reliability, especially in the fields of microwave communication, energy technology, national defense and spaceflight. Because the waveguide has the defects of volume and cost, and the microstrip line has the defects of radiation and power, it can not meet the demand of high power, low loss, small volume and low cost of microwave technology day by day. Thus it is found that the substrate Integrated waveguide (SIW) technology has the advantages of both rectangular waveguide and microstrip devices, and has the advantages of low radiation and insertion loss, high Q value, high power capacity and miniaturization. The passive and active devices can be integrated on the same substrate by PCB or LTCC process, which can reduce the connection conversion between the devices made by different processes, and realize the good integration of the system, which is suitable for mass production and application. In order to develop a practical high performance X band substrate integrated waveguide ring, the following aspects have been studied in this paper: 1) first of all, according to the theoretical derivation and simulation experiment, The electrical parameters are as follows: the standing wave ratio (VSWR) is less than 1.2, the insertion loss is less than 0.4 dB, the echo loss and isolation are both greater than 20dB, and the Y-junction SIW ring is transformed into T-type loop by studying the matching technique between SIW and microstrip line. A miniaturized T-junction SIW circulator with superior performance and easy integration is designed. The return loss and isolation are more than 20 dB, the insertion loss is less than 0.5 dB, and the device size is 12mm 脳 12mm 脳 0.635 mm. The validity of the design method of the substrate integrated waveguide ring device in this paper is verified. The tolerance analysis of the triangular ferrite column annular device is carried out, and the influence of the main parameters on the performance of the device is analyzed. This is of great guiding significance for the testing and improvement of the device. (5) through the research on the testing principle of the strip wire clamp and the assembly process of the device, the sample of the X-band substrate integrated waveguide annular device is prepared and tested. The volume of the sample is 12mm 脳 12mm 脳 0.635mm. The whole X band echo loss is more than 10 dB, and the isolation loss is more than 5 dB. Near the center of 10 GHz, the echo loss is less than 20 dB, the insertion loss is less than 1 dB, and the isolation bandwidth greater than 20 dB is greater than 1 GHz. In this paper, a relatively complete substrate integrated waveguide ring design system is established, which has a wide application prospect in microwave components, integrated circuits and so on.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN621

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