本文選題：微波光子學(xué) + 硅基調(diào)制器線性度優(yōu)化　； 參考：《浙江大學(xué)》2017年碩士論文

【摘要】：微波光子學(xué)是由射頻(RF)工程與光電子技術(shù)融合而產(chǎn)生的,主要研究如何利用光電子學(xué)的方法、器件及其組成的系統(tǒng)來實(shí)現(xiàn)微波信號的產(chǎn)生、傳輸分配、處理。受到片上光互聯(lián)應(yīng)用的驅(qū)動以及在硅基光電子技術(shù)日益更新的背景下,硅基集成實(shí)現(xiàn)大帶寬、高線性的模擬光鏈路一直是近年來微波光子領(lǐng)域的前沿?zé)狳c(diǎn),這對片上全光通信和片上光子器件互連集成有著十分重要的意義。本文圍繞模擬光鏈路高線性硅基調(diào)制器進(jìn)行深入的理論研究,主要工作包括以下幾個(gè)方面:1.通過Silvaco器件仿真模擬了硅基調(diào)制器的PN結(jié)非線性(有效折射率變化和吸收損耗),并結(jié)合Mach-Zehnder硅基調(diào)制器的調(diào)制曲線非線性,嚴(yán)謹(jǐn)推導(dǎo)出Single-MZM模型,并給出了完全抵消三階交調(diào)失真的高線性參數(shù)關(guān)系。然而該模型有一定的局限性。所以在此基礎(chǔ)上將模型進(jìn)行串并聯(lián)組合建立了Parallel-MZM模型和Series-MZM模型并詳細(xì)分析其高線性參數(shù)關(guān)系。最后在輸入光功率和RF功率相同的情況下對三個(gè)模型進(jìn)行對比分析優(yōu)缺點(diǎn)。2.利用兩種模場非線性相互補(bǔ)償?shù)南敕?針對兩種最常見的硅基調(diào)制器,分別提出了兩種高線性微波鏈路方法:一種是基于雙偏振集成的硅基MZM高線性方法,通過TEO模和TMO模在同一個(gè)MZM產(chǎn)生的非線性相互補(bǔ)償;另一種是基于雙波長微環(huán)調(diào)制器的高線性方法,通過兩個(gè)近似頻率的波長信號在同一個(gè)微環(huán)調(diào)制器產(chǎn)生的非線性相互補(bǔ)償。3.設(shè)計(jì)了 Parallel-MZM,Series-MZM,雙偏振MZM和雙波長微環(huán),添加了實(shí)驗(yàn)測試的輔助結(jié)構(gòu),并給出了測試方案。
[Abstract]:Microwave photonics is produced by the fusion of RF / RF engineering and optoelectronic technology. This paper mainly studies how to use the method of optoelectronics, the device and the system to realize the generation, transmission, distribution and processing of microwave signal. Driven by on-chip optical interconnection and increasingly updated silicon-based optoelectronic technology, silicon-based integrated optical links with large bandwidth and high linearity have been a hot spot in the field of microwave photons in recent years. This is of great significance for all-optical communication on-chip and the interconnection and integration of photonic devices on-chip. This paper focuses on the theoretical study of high linear silicon based modulators in analog optical links. The main work includes the following aspects: 1. The PN junction nonlinearity (change of effective refractive index and absorption loss) of silicon based modulator is simulated by Silvaco device. Combining with the nonlinearity of modulation curve of Mach-Zehnder silicon based modulator, the Single-MZM model is derived. A high linear parameter relation is given to completely cancel the third order Intermodulation distortion. However, the model has some limitations. On this basis, the Parallel-MZM model and the Series-MZM model are established by series-parallel combination and their high linear parameter relationships are analyzed in detail. Finally, the advantages and disadvantages of the three models are compared and analyzed under the same input optical power and RF power. Two kinds of high linearity microwave link methods are proposed for two most common silicon based modulators by using the idea of nonlinear compensation between two modes. One is a high linearity method based on double polarization integration for silicon based MZM. The nonlinearity generated by TEO mode and TMO mode in the same MZM is compensated; the other is based on the high linearity method of dual-wavelength microloop modulator, and the nonlinear compensation of two wavelength signals with approximate frequency in the same microloop modulator. 3. Parallel-MZM Series-MZM, dual-polarization MZM and dual-wavelength microloop are designed. The auxiliary structure of experimental test is added, and the test scheme is given.
【學(xué)位授予單位】：浙江大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN761

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3 陳偉偉;基于載流子色散效應(yīng)的硅基光子器件若干問題研究[D];浙江大學(xué);2012年

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本文編號：1787842