發(fā)布時(shí)間：2018-04-22 15:37

  本文選題：表面機(jī)械研磨處理 + 半導(dǎo)體納米結(jié)構(gòu)�。� 參考：《合肥工業(yè)大學(xué)》2015年碩士論文

【摘要】：氧化銅是一種重要的金屬氧化物半導(dǎo)體材料,由于其在自然界中含量豐富且合成成本低廉,因此得到了廣泛的應(yīng)用。低維的氧化銅納米結(jié)構(gòu)(零維或者一維)同樣得到了應(yīng)用,它們可以通過直接加熱法、濕化學(xué)法、金屬輔助法等方法合成。研究發(fā)現(xiàn),通過以上方法合成的氧化銅納米線具有很高的結(jié)晶度以及縱橫比,這使得一維氧化銅納米結(jié)構(gòu)具有很多優(yōu)異的特性,這些特性使氧化銅納米線在光電器件領(lǐng)域具有很大的應(yīng)用前景,例如一維氧化銅結(jié)構(gòu)可以用于制備光電探測(cè)器、氣體傳感器、場(chǎng)發(fā)射器件以及催化劑等等,盡管有了以上許多研究,但是對(duì)于一維氧化銅納米結(jié)構(gòu)的傳輸特性以及光電特性的研究依舊很少,而這對(duì)于氧化銅納米器件構(gòu)建各種光電設(shè)備具有重要作用。因此對(duì)于一維氧化銅納米結(jié)構(gòu)的研究不僅有利于單根氧化銅納米線光電特性的理解,并且對(duì)于高性能光電器件的發(fā)展具有重要意義。在本論文中,我們先用表面機(jī)械研磨(SMAT)處理銅片,然后在管式爐中直接加熱銅片合成氧化銅納米線。合成的氧化銅納米線具有很高的結(jié)晶性,其生長(zhǎng)方向?yàn)閇110]。我們基于單根氧化銅納米線制備場(chǎng)效應(yīng)晶體管,其傳輸特性表現(xiàn)為弱p型導(dǎo)電行為,接著我們基于第一性原理對(duì)其進(jìn)行理論模擬計(jì)算,研究發(fā)現(xiàn)理想的氧化銅表現(xiàn)為金屬特性,在存在銅缺陷或者氧缺陷的情況下表現(xiàn)為p型特性。我們又對(duì)其進(jìn)行光電特性研究,發(fā)現(xiàn)氧化銅納米線對(duì)600mn的光最敏感,并且具有很高的再現(xiàn)性和穩(wěn)定性。通過實(shí)驗(yàn),我們同樣觀察到基于柔性材料PET基底的光電探測(cè)器在不同的曲率下仍具有很好的再現(xiàn)性。以上研究表明氧化銅納米線在未來的器件應(yīng)用中具有很大的潛力。
[Abstract]:Copper oxide is an important metal oxide semiconductor material, which is widely used because of its rich content in nature and low synthesis cost. Low-dimensional copper oxide nanostructures (zero-dimensional or one-dimensional) have also been applied, and they can be synthesized by direct heating, wet chemistry and metal-assisted methods. It is found that the copper oxide nanowires synthesized by the above methods have high crystallinity and aspect ratio, which makes the one-dimensional copper oxide nanostructures have many excellent properties. Because of these characteristics, copper oxide nanowires have great application prospects in the field of optoelectronic devices, such as one-dimensional copper oxide structure can be used in the preparation of photodetectors, gas sensors, field emission devices and catalysts, and so on. In spite of the above researches, there are few studies on the transmission and photoelectric properties of one-dimensional copper oxide nanostructures, which play an important role in the construction of various optoelectronic devices. Therefore, the study of one-dimensional copper oxide nanostructures is not only beneficial to the understanding of the photoelectric properties of single copper oxide nanowires, but also of great significance to the development of high-performance photovoltaic devices. In this thesis, copper oxide nanowires are synthesized by directly heating copper sheets in a tube furnace. The synthesized copper oxide nanowires have high crystallinity and the growth direction is [110]. We fabricate field effect transistors based on single copper oxide nanowires, the transport characteristics of which are weak p type conduction behavior. Then we simulate the transistors based on the first principle and find that the ideal copper oxide exhibits metal properties. In the presence of copper defects or oxygen defects in the presence of p-type characteristics. We also studied its photoelectric properties and found that copper oxide nanowires are most sensitive to the light of 600mn and have high reproducibility and stability. Through experiments, we also observed that the photodetectors based on flexible PET substrate still have good reproducibility under different curvature. The above results show that copper oxide nanowires have great potential in future device applications.
【學(xué)位授予單位】：合肥工業(yè)大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TB383.1;TN15

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