本文選題：絕緣柵雙極型晶體管 + 逆導(dǎo)型IGBT��； 參考：《西安理工大學》2017年碩士論文

【摘要】：隨著薄片工藝等制造技術(shù)的發(fā)展,在場阻止型的絕緣柵雙極型晶體管(Field-Stop Insulated Gate Bipolar Transistor, FS-IGBT)的背面進行光刻和離子注入并形成N+短路區(qū)(N+-short)已成為一種可能,由此上世紀90年代提出的陽極短路型IGBT重新煥發(fā)生機。陽極短路型 IGBT 又被稱為逆導(dǎo)型 IGBT (Reverse-Conducting Insulated Gate Bipolar Transistor, RC-IGBT)。但是目前的RC-IGBT產(chǎn)品只適用于軟開關(guān)領(lǐng)域(Soft Switching Condition),這是由于它們在逆向?qū)ㄟ^程中反向恢復(fù)損耗過大以及電流分布不均勻,進而造成器件局部過熱和可靠性較低。本文針對目前RC-IGBT存在的問題,利用Sentaurus TCAD仿真軟件分析了影響RC-IGBT的正向?qū)�、反向�(qū)�、關(guān)斷、反向恢復(fù)和阻斷等特性的因素。首先探究了RC-IGBT背面結(jié)構(gòu)的尺寸對正向?qū)ê头聪驅(qū)ㄌ匦缘挠绊憽ｋS后針對常規(guī)RC-IGBT在硬開關(guān)領(lǐng)域(Hard Switching Condition)所遇到的問題,提出了具有低反向恢復(fù)損耗的RC-IGBT元胞結(jié)構(gòu)。最后對于常規(guī)RC-IGBT在正向?qū)ㄖ腥菀壮霈F(xiàn)的回跳(Snapback)現(xiàn)象,給出了一種新型的短路區(qū)結(jié)構(gòu)。仿真結(jié)果表明,本文所提出的低功耗型的RC-IGBT,相比于常規(guī)RC-IGBT,其反向恢復(fù)損耗能減少約一半,反向恢復(fù)時間可減少約三分之一,反向恢復(fù)峰值電流減少約四分之一。此外,本文提出了一種溝槽隔離型的短路區(qū)結(jié)構(gòu),采用此結(jié)構(gòu)后,元胞寬度可降為常規(guī)RC-IGBT元胞寬度的1/20,同時又能確保導(dǎo)通中不出現(xiàn)回跳現(xiàn)象,進而在導(dǎo)通中擁有均勻的電流分布。本文的研究對于解決目前RC-IGBT在商業(yè)化過程中所面臨的問題,給出了一種可行的解決方案,具有一定的參考意義,也有助于RC-IGBT的早日國產(chǎn)化。
[Abstract]:With the development of fabrication technology such as wafer technology, it is possible that the field stop Insulated Insulated Gate Bipolar transistors (FS-IGBTs) have been photolithography and ion implantation on the back of the FS-IGBT to form N short circuit N shortcuts. Thus the anodic short-circuit IGBT proposed in the 1990 s is revitalized again. Anodic short circuit IGBT is also called reverse conductive Insulated Gate Bipolar transistor. RC-IGBT. However, the current RC-IGBT products are only suitable for soft Switching condition in the soft switching field, which is due to the excessive reverse recovery loss and uneven current distribution in the reverse conduction process, resulting in local overheating and low reliability of the devices. Aiming at the problems existing in RC-IGBT at present, this paper analyzes the factors that affect the characteristics of RC-IGBT, such as forward conduction, reverse conduction, turn-off, reverse recovery and blocking, by using Sentaurus TCAD simulation software. The influence of the size of the back structure of RC-IGBT on the forward and reverse conduction characteristics is investigated. Then, in order to solve the problem encountered by conventional RC-IGBT in hard Switching condition, a RC-IGBT cell structure with low reverse recovery loss is proposed. At last, a novel short-circuit structure is presented for the phenomenon of snapback, which is easy to appear in the forward conduction of conventional RC-IGBT. The simulation results show that compared with conventional RC-IGBTs, the proposed RC-IGBTs can reduce the reverse recovery loss by about half, reverse recovery time by about 1/3, and reverse recovery peak current by about 1/4. In addition, in this paper, a trench isolation short circuit structure is proposed. With this structure, the cell width can be reduced to 1 / 20 of the conventional RC-IGBT cell width, and at the same time, it can ensure that there is no rebound phenomenon in the conduction. In turn, there is a uniform current distribution in the conduction. This paper provides a feasible solution for solving the problems that RC-IGBT is facing in the process of commercialization. It has some reference significance and is also helpful to the localization of RC-IGBT at an early date.
【學位授予單位】：西安理工大學
【學位級別】：碩士
【學位授予年份】：2017
【分類號】：TN322.8

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相關(guān)期刊論文 前2條

1 Guoyou Liu;Rongjun Ding;Haihui Luo;;Development of 8-inch Key Processes for Insulated-Gate Bipolar Transistor[J];Engineering;2015年03期

2 王彩琳;張磊;;An analysis of the dynamic avalanche mechanism of an improved FCE diode with a deep p~+ adjusting region[J];Journal of Semiconductors;2015年04期

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本文編號：1786743