可重構(gòu)MEMS微波功率耦合器的設(shè)計(jì)及其可靠性研究
本文選題:可重構(gòu)定向耦合器 + MEMS梁 ; 參考:《東南大學(xué)》2015年碩士論文
【摘要】:微波功率耦合器廣泛地應(yīng)用在軍用和民用微波通訊領(lǐng)域。傳統(tǒng)的微波功率耦合器的耦合度是固定的,所以本文提出了一種耦合度可變的可重構(gòu)MEMS微波功率耦合器,并完成了該可重構(gòu)MEMS微波功率耦合器的模擬、設(shè)計(jì)與制備。由于MEMS器件中加入了可動(dòng)的MEMS梁結(jié)構(gòu),微觀效應(yīng)造成的可靠性問題成為MEMS器件設(shè)計(jì)中最難解決的關(guān)鍵問題。針對(duì)這一問題,本文還對(duì)MEMS梁的可靠性問題進(jìn)行了一系列研究。本文的主要研究?jī)?nèi)容及其創(chuàng)新點(diǎn)包括:(1)基于GaAs MMIC工藝,設(shè)計(jì)了一種可重構(gòu)MEMS微波功率耦合器。利用HFSS優(yōu)化設(shè)計(jì)后的耦合器中心頻率為35GHz,在35GHz處可實(shí)現(xiàn)7.989dB和10.62dB兩種不同的耦合度。在30到40GHz頻率范圍內(nèi),該耦合器在兩種狀態(tài)下的S11小于-15dB,隔離度大于15dB。以上內(nèi)容的創(chuàng)新之處在于,該耦合器的副線上設(shè)計(jì)了一種帶有懸臂梁的雙端梁結(jié)構(gòu)來實(shí)現(xiàn)耦合度的調(diào)節(jié);該耦合器與傳統(tǒng)的雙線定向耦合器在同等性能下基本具有相同的尺寸,相比與其它的可重構(gòu)禍合器在尺寸上有明顯的優(yōu)勢(shì)。(2)基于粘附會(huì)影響MEMS梁的振動(dòng)頻譜的原理,提出了利用振動(dòng)實(shí)驗(yàn)來檢測(cè)粘附問題的方法。根據(jù)振動(dòng)實(shí)驗(yàn)的實(shí)驗(yàn)結(jié)果,總結(jié)了三種常見的振動(dòng)頻譜對(duì)應(yīng)的粘附狀態(tài),其中只有振動(dòng)頻譜中的諧振峰出現(xiàn)的頻率值與理論預(yù)測(cè)一致時(shí),MEMS梁才是未粘附的,而其他情況下的MEMS梁都發(fā)生了部分或者全部的粘附,該結(jié)論與通過觀察對(duì)應(yīng)測(cè)試梁的表面形貌得出的結(jié)論是一致的:利用諧振法對(duì)不同干燥溫度的MEMS梁的粘附問題進(jìn)行了檢測(cè),實(shí)驗(yàn)結(jié)果表明,提高干燥溫度有利于抑制粘附,這與相關(guān)的理論結(jié)果是一致的。以上內(nèi)容的創(chuàng)新之處在于本文提出的諧振法具有無損和適用性廣的優(yōu)點(diǎn),彌補(bǔ)了SEM法和干涉法無法準(zhǔn)確檢測(cè)寬MEMS梁的粘附問題的缺陷。(3)基于考慮了等效抗扭剛度的簡(jiǎn)支邊界條件,建立了具有階躍錨區(qū)的雙端梁的振動(dòng)模型,并推導(dǎo)了該振動(dòng)模型的諧振頻率和振型函數(shù)的理論表達(dá)式;利用該振動(dòng)模型分析了楊氏模量和支撐梁的厚度對(duì)階躍錨區(qū)雙端梁諧振頻率的影響,分析結(jié)果表明,隨著楊氏模量和支撐梁的厚度的減小,階躍錨區(qū)雙端梁的諧振頻率也會(huì)隨之減;利用ANSYS軟件對(duì)階躍錨區(qū)雙端梁進(jìn)行了有限元仿真,該仿真結(jié)果與本文模型的預(yù)測(cè)結(jié)果的對(duì)比表明,在梁長(zhǎng)大于200μm時(shí),本文中的振動(dòng)模型得到的諧振頻率的預(yù)測(cè)值和有限元仿真得到的值之間的誤差要小于5%。以上內(nèi)容的創(chuàng)新之處在于,本文中的振動(dòng)模型相比固支錨區(qū)的模型更有效的描述了階躍錨區(qū)雙端梁的諧振特性。(4)為了方便殘余應(yīng)力的測(cè)量,設(shè)計(jì)了四向微旋轉(zhuǎn)梁殘余應(yīng)力測(cè)量結(jié)構(gòu),利用ANSYS軟件對(duì)四向微旋轉(zhuǎn)梁殘余應(yīng)力測(cè)量結(jié)構(gòu)進(jìn)行了優(yōu)化設(shè)計(jì),并基于GaAs MMIC工藝制備了四向微旋轉(zhuǎn)梁殘余應(yīng)力測(cè)量結(jié)構(gòu);實(shí)驗(yàn)測(cè)試結(jié)果表明,在GaAs MMIC工藝中,殘余應(yīng)力對(duì)MEMS梁的屈曲的影響很小。以上內(nèi)容的創(chuàng)新之處在于,相比于傳統(tǒng)的微旋轉(zhuǎn)梁殘余應(yīng)力測(cè)量結(jié)構(gòu),該四向微旋轉(zhuǎn)梁殘余應(yīng)力測(cè)量結(jié)構(gòu)不需要制作標(biāo)尺來測(cè)量指針梁的偏轉(zhuǎn)位移,而且測(cè)量也更方便。以上可重構(gòu)MEMS微波功率耦合器的設(shè)計(jì)方法填補(bǔ)了國內(nèi)基于GaAs MMIC工藝的微波MEMS器件的空白,具有潛在的應(yīng)用價(jià)值。同時(shí),其中關(guān)于實(shí)驗(yàn)方法與理論模型的研究論文已被MEMS領(lǐng)域重要學(xué)術(shù)期刊錄用以及審稿,具有較高的學(xué)術(shù)價(jià)值。
[Abstract]:Microwave power couplers are widely used in military and civil microwave communication fields. The coupling degree of traditional microwave power couplers is fixed. So a reconfigurable MEMS microwave power coupler with variable coupling is proposed in this paper, and the simulation, design and preparation of the reconfigurable MEMS microwave power coupling are completed. Because of MEMS devices, the design and preparation of the reconfigurable microwave power coupler are completed. In addition, the dynamic MEMS beam structure is added, and the reliability problem caused by the micro effect has become the most difficult problem to be solved in the design of MEMS devices. In this paper, a series of studies on the reliability of MEMS beams are carried out in this paper. The main contents and innovation points of this paper are as follows: (1) based on the GaAs MMIC process, a kind of design is designed. The MEMS microwave power coupler is reconstructed. The central frequency of the coupler with HFSS optimization is 35GHz, and the two different coupling degrees of 7.989dB and 10.62dB can be realized at 35GHz. In the range of 30 to 40GHz, the coupler is less than -15dB under two states, and the innovation of the isolation degree greater than 15dB. is that the coupler is the coupler. A double end beam with a cantilever beam is designed to adjust the coupling. The coupler has the same size as the traditional double line directional coupler under the same performance. Compared with the other reconfigurable calamers in size, the coupler has the obvious advantage. (2) the original vibration spectrum of the MEMS beam is influenced by the adhesion. According to the experimental results of vibration experiments, three common vibration spectra corresponding adhesion states are summarized. Only when the frequency values of the resonant peaks appear in the vibration spectrum are consistent with the theoretical predictions, MEMS Liang Cai is unadhered, and the other MEMS beams occur in other cases. The conclusion is consistent with the conclusion obtained by observing the surface morphology of the corresponding test beam: the adhesion of MEMS beams with different drying temperatures is detected by the resonance method. The experimental results show that the increase of the drying temperature is beneficial to the inhibition of adhesion, which is in agreement with the relevant theoretical results. The innovation of the content is that the resonance method proposed in this paper has the advantages of nondestructive and wide application, which makes up for the defect that the SEM method and interference method can not accurately detect the adhesion problem of the wide MEMS beam. (3) based on the simple supported boundary condition considering the equivalent torsion stiffness, the vibration model of a double end beam with a step anchor area is established and the vibration of the vibration is derived. The theoretical expression of the resonant frequency and the mode function of the dynamic model is used to analyze the influence of the young's modulus and the thickness of the supporting beam on the resonant frequency of the double end beam in the step anchor area. The results show that the resonance frequency of the double end beam in the step anchor area decreases with the decrease of the young's modulus and the thickness of the supporting beam. The finite element simulation of the double end beam of the step anchor area is carried out by ANSYS software. The comparison of the simulation results and the prediction results of the model shows that the error difference between the predicted value of the resonant frequency and the value obtained by the finite element simulation in this paper is less than the innovation of the content above 5%. when the beam length is more than 200 u m. The vibration model in this paper is more effective than the fixed anchor area model to describe the resonant characteristics of the double end beam in the step anchor area. (4) in order to facilitate the measurement of the residual stress, the residual stress measurement structure of the four direction micro rotating beam is designed. The ANSYS software is used to optimize the residual stress measurement structure of the four direction micro rotating beam, and based on the GaAs MMI The residual stress measurement structure of the four direction micro rotating beam is prepared by the C process. The experimental test results show that in the GaAs MMIC process, the residual stress has little effect on the buckling of the MEMS beam. The innovation of the above content is that the residual stress measurement structure of the four direction micro rotating beam is not needed compared to the traditional residual stress measurement structure of the traditional micro rotating beam. A ruler is made to measure the deflection displacement of the pointer beam, and the measurement is more convenient. The design method of the reconfigurable MEMS microwave power coupler has filled the blank of the microwave MEMS device based on the GaAs MMIC process in China, and it has potential application value. At the same time, the research papers about the experimental method and the theoretical model have been reproduced in the MEMS field. It is of high academic value to employ and review academic journals.
【學(xué)位授予單位】:東南大學(xué)
【學(xué)位級(jí)別】:碩士
【學(xué)位授予年份】:2015
【分類號(hào)】:TN622
【相似文獻(xiàn)】
相關(guān)期刊論文 前10條
1 劉學(xué)典;李賓;秦昌永;劉彩軍;;異步永磁耦合器與液力耦合器性能比較分析[J];東方企業(yè)文化;2012年15期
2 ;新式八通道多重耦合器[J];電信快報(bào);1996年08期
3 楊希,趙夔,郝建奎,張保澄,謝大林,黃森林;同軸對(duì)稱型主耦合器的研制[J];強(qiáng)激光與粒子束;2001年01期
4 曲曉云;寬壁耦合器的理論分析與設(shè)計(jì)[J];現(xiàn)代雷達(dá);2001年02期
5 甘朝欽,孫小菡,張明德;一種新型復(fù)合式星形耦合器及其性能分析[J];儀器儀表學(xué)報(bào);2001年04期
6 范國芳,楊吉生,朱劍平,朱月紅,孫長(zhǎng)庫;漸變型聲指向耦合器中聲場(chǎng)的計(jì)算[J];光電子·激光;2003年11期
7 魏士庚,吉加林;高功率正交模耦合器的設(shè)計(jì)[J];雷達(dá)與對(duì)抗;2003年04期
8 孫一翎,江曉清,楊建義,王明華;位置數(shù)為2的多模干涉耦合器相位關(guān)系分析[J];半導(dǎo)體學(xué)報(bào);2005年11期
9 汪海英;;1553B總線用單/雙耦合器[J];光纖與電纜及其應(yīng)用技術(shù);2008年01期
10 陳奇Y;古昀生;顏嘉禾;灻山福;;田口穩(wěn)健設(shè)計(jì)優(yōu)化之絕熱式光方向完全耦合器(英文)[J];電子器件;2008年01期
相關(guān)會(huì)議論文 前10條
1 肖安之;;大功率弱耦合器的分析與設(shè)計(jì)[A];1985年全國微波會(huì)議論文集[C];1985年
2 高強(qiáng);袁乃昌;;帶耦合器的駐波保護(hù)電路(一)[A];2001年全國微波毫米波會(huì)議論文集[C];2001年
3 張海偉;史小衛(wèi);李瑞華;徐樂;魏峰;;一種新型的寬帶3dB耦合器設(shè)計(jì)[A];2011年全國微波毫米波會(huì)議論文集(上冊(cè))[C];2011年
4 江月;王清源;彭安盡;王璐靜;;寬帶3dB耦合器設(shè)計(jì)[A];2011年全國微波毫米波會(huì)議論文集(上冊(cè))[C];2011年
5 萬小敏;李楠;張衛(wèi)民;;氣候系統(tǒng)模式耦合器的研究與發(fā)展[A];2006年全國開放式分布與并行計(jì)算機(jī)學(xué)術(shù)會(huì)議論文集(三)[C];2006年
6 伍欣;竇文斌;;一種新型8mm波段正交模耦合器的仿真設(shè)計(jì)[A];2005'全國微波毫米波會(huì)議論文集(第三冊(cè))[C];2006年
7 王濤;黃德修;;有源光開關(guān)中的方向耦合器研究[A];大珩先生九十華誕文集暨中國光學(xué)學(xué)會(huì)2004年學(xué)術(shù)大會(huì)論文集[C];2004年
8 張澤東;寧杰;韓雪巖;唐任遠(yuǎn);;永磁耦合器的有限元計(jì)算分析[A];第十一屆全國永磁電機(jī)學(xué)術(shù)交流會(huì)論文集[C];2011年
9 張麗梅;王智;吳重慶;;3×3平行排列耦合器的開關(guān)特性的研究[A];2009年先進(jìn)光學(xué)技術(shù)及其應(yīng)用研討會(huì)論文集(下冊(cè))[C];2009年
10 楊堅(jiān);;多線耦合器的耦合系數(shù)[A];1995年全國微波會(huì)議論文集(上冊(cè))[C];1995年
相關(guān)重要報(bào)紙文章 前5條
1 記者 劉泓波邋通訊員 王永剛;大功率柴油機(jī)耦合器機(jī)組節(jié)油又高效[N];中國石油報(bào);2008年
2 記者 范存強(qiáng);節(jié)能耦合器問世[N];中國石油報(bào);2000年
3 遼寧 陳繼武 黃元昆 程剛;TH904A型電話耦合器的技術(shù)改進(jìn)[N];電子報(bào);2010年
4 ;看安普如何布線IDC[N];計(jì)算機(jī)世界;2004年
5 劉伊婷;家里的管道也能“上網(wǎng)”[N];中國質(zhì)量報(bào);2007年
相關(guān)博士學(xué)位論文 前3條
1 林峰;多頻帶耦合器與功率分配器設(shè)計(jì)理論及其實(shí)現(xiàn)[D];華南理工大學(xué);2013年
2 魏世樂;面向全光信號(hào)處理的半導(dǎo)體集成器件研究[D];北京郵電大學(xué);2014年
3 溫華明;高梯度射頻超導(dǎo)腔及其功率耦合器材料的研究[D];中國科學(xué)院研究生院(電工研究所);2005年
相關(guān)碩士學(xué)位論文 前10條
1 袁文華;直線加速器耦合器的有關(guān)優(yōu)化設(shè)計(jì)及熱、結(jié)構(gòu)分析[D];中國科學(xué)技術(shù)大學(xué);2015年
2 居鈺林;基于3×3耦合器相干檢測(cè)的再調(diào)制WDM-PON[D];南京郵電大學(xué);2015年
3 程旭華;葉片式液壓耦合器[D];太原科技大學(xué);2015年
4 王凱悅;可重構(gòu)MEMS微波功率耦合器的設(shè)計(jì)及其可靠性研究[D];東南大學(xué);2015年
5 黃孫港;漸變型多模干涉耦合器的成像特性及應(yīng)用研究[D];浙江工業(yè)大學(xué);2012年
6 吉德成;雙帶以及多帶耦合器的研究[D];西安電子科技大學(xué);2013年
7 劉暢;3×3耦合器解調(diào)方法研究與實(shí)現(xiàn)[D];哈爾濱工程大學(xué);2012年
8 溫宇軍;平面耦合器雙頻化及寬帶化研究[D];南京郵電大學(xué);2013年
9 張澤東;永磁磁力耦合器設(shè)計(jì)與關(guān)鍵技術(shù)研究[D];沈陽工業(yè)大學(xué);2012年
10 李俊一;超寬帶定向正交耦合器的設(shè)計(jì)與實(shí)現(xiàn)[D];西安電子科技大學(xué);2012年
,本文編號(hào):1782681
本文鏈接:http://sikaile.net/kejilunwen/dianzigongchenglunwen/1782681.html