本文選題：歐姆接觸 + Al電極��； 參考：《云南大學(xué)》2015年碩士論文

【摘要】：Ge/Si量子點材料具有三維量子限制效應(yīng),且易于實現(xiàn)與硅基集成電路相集成,在未來的光電器件中有很大的應(yīng)用前景。本文圍繞Ge/Si量子點光電探測器件進行了一些基礎(chǔ)性研究,研究了此磁控濺射制備Ge點,并研究了磁控濺射制備歐姆接觸A1電極,包括濺射功率、沉積厚度、退火溫度和時間等因素對Al膜形貌和性能的影響。另外,開展了光探測器原型器件的試制。 首先研究了磁控濺射制備Ge點,通過退火對Ge量子點的密度和尺寸進行調(diào)控。利用原子力顯微鏡(AFM)和拉曼(Raman)對制備Ge量子點的形成機理和演變規(guī)律進行了研究。AFM測試表明,隨著退火溫度的升高,量子點的體積和密度都增加,在650℃退火10min的樣品量子點密度達到約3.5×1010cm-2。通過拉曼光譜對比分析,發(fā)現(xiàn)Ge-Ge振動模隨著退火溫度的升高而藍移,認為主要是由于隨退火溫度升高位錯不斷減少而導(dǎo)致的。 然后,采用磁控濺射進行了Si基Al膜的制備研究,研究了濺射功率、沉積厚度、退火溫度和時間等因素對Al膜形貌和性能的影響。通過SEM、 EDS等表征手段對樣品表面形貌和元素含量進行了表征。測試顯示較優(yōu)的Al膜制備參數(shù)是：濺射功率100W,沉積厚度600nm,退火溫度550℃。采用較優(yōu)參數(shù),研究了退火時間對Al-Si歐姆接觸性能的影響,并測試了其電流-電壓(I-V)特性曲線。結(jié)果顯示未退火和退火5min的樣品沒有形成歐姆接觸,550℃退火10min和30min的樣品都形成較好的歐姆接觸,且退火30min的樣品接觸電阻更低。 最后,開展了Ge/Si量子點為基礎(chǔ)的光電探測器的試制。以PIN結(jié)構(gòu)為基礎(chǔ),制備了三個原型器件,并進行了其I-V曲線測試。通過調(diào)整A1電極厚度、通光控、量子點層數(shù),P型層生長條件等參數(shù),最終器件#003得到了較好的I-V特性曲線。
[Abstract]:Ge/Si quantum dots have three-dimensional quantum confinement effect and are easy to be integrated with silicon based integrated circuits. It has great application prospects in the future optoelectronic devices.In this paper, we have carried out some basic research on Ge/Si quantum dot photodetectors. We have studied the preparation of GE dots by magnetron sputtering, and the ohmic contact A1 electrodes prepared by magnetron sputtering, including sputtering power and deposition thickness.Effects of annealing temperature and time on the morphology and properties of Al films.In addition, the prototype device of photodetector is developed.Firstly, the GE dots prepared by magnetron sputtering are studied. The density and size of GE quantum dots are controlled by annealing.The formation mechanism and evolution of GE quantum dots were studied by atomic force microscopy (AFM) and Raman Raman. AFM measurements showed that the volume and density of GE quantum dots increased with the increase of annealing temperature.The quantum dot density of the sample annealed at 650 鈩，

本文編號：1769817