本文選題：正交混頻器 + 鏡頻抑制��； 參考：《微波學(xué)報》2016年S1期

【摘要】：本文采用WIN 0.15um GaAs PHEMT工藝設(shè)計(jì)了一款6~10GHz的微波無源單片集成正交混頻器。由于在本振端和射頻端都采用了螺旋型的Marehand巴倫結(jié)構(gòu),從而使芯片面積得到了極大的改善,芯片的總面積為1.5mm×1.15mm。在所要求的頻率范圍之內(nèi),ADS仿真結(jié)果表明:變頻損耗小于10d B,典型值為7d B;鏡頻抑制大于25d B,典型值是35d B;LO到RF的隔離度大于40d B,本振到中頻的隔離度大于20d B,射頻到中頻的隔離度大于30d B。
[Abstract]:In this paper, a 6~10GHz microwave passive monolithic integrated quadrature mixer is designed using WIN 0.15um GaAs PHEMT process.Because the spiral Marehand Barron structure is used in both the local and RF terminals, the chip area is greatly improved. The total area of the chip is 1.5mm 脳 1.15mm.The simulation results of ads show that the frequency conversion loss is less than 10 dB, the typical value is 7 dB, the mirror frequency suppression is more than 25 dB, the typical isolation from 35 dB to RF is more than 40 dB, and the isolation from local oscillator to intermediate frequency is more than 20 dB.The isolation from RF to if is more than 30 dB.
【作者單位】： 電子科技大學(xué)極高頻復(fù)雜系統(tǒng)國防重點(diǎn)學(xué)科實(shí)驗(yàn)室;
【分類號】：TN773
，

本文編號：1767653