本文選題：CSG + MOSFET　； 參考：《安徽大學(xué)》2015年碩士論文

【摘要】：近年來,由于科技的飛速發(fā)展,集成化程度越來越高。為滿足集成電路發(fā)展的要求,金屬氧化物半導(dǎo)體場效應(yīng)晶體管(MOSFET, Metal-Oxide-Semiconductor Field-Effect Transistor)的特征尺寸不斷減小。同時也帶來一些不好的結(jié)果,嚴重影響MOs器件的可靠性。這對工藝技術(shù)的發(fā)展提出了更高要求,如超淺結(jié)技術(shù)、應(yīng)變溝道技術(shù)等。同時出現(xiàn)了許多新型的三維結(jié)構(gòu),如雙柵和圍柵(CSG, Cylindrical Surrounding-gate)MOSFET等。其中CSG MOSFET的整個溝道被柵包圍,使得柵對溝道有良好的控制力,有效抑短溝道效應(yīng)。CSG MOSFET的短溝道效應(yīng)提高,使晶體管尺寸得以進一步縮小。以上諸多優(yōu)勢使得CSG MOSFET成為擴展納米級CMOS縮放比例的電路設(shè)計中最有前途的結(jié)構(gòu)之一。本文從CSG MOSFET溝道結(jié)構(gòu)設(shè)計出發(fā),主要研究階梯摻雜溝道(steeped SC, doping channel)CSG MOSFET.和均勻摻雜溝道CSG MOSFET的工作機制、物理模型及性能相比,分析提高MOS器件的擊穿特性和抑制熱載流子效應(yīng)的方法。首先,使用三維仿真軟件ATLAS模擬仿真SC CSG MOSFET的溝道結(jié)構(gòu)特性：不同高摻雜濃度和高摻雜區(qū)域長度。詳細分析不同溝道結(jié)構(gòu)下SC CSG MOSFET電勢、電場、Ⅰd-Ⅴds和Ⅰd-Ⅴgs等特性。接著分析柵長對SC DG MOSFET和SC CSG MOSFET兩種結(jié)構(gòu)的閾值電壓下降和漏感應(yīng)勢壘降低等短溝道效應(yīng)效應(yīng)。結(jié)果表明,SC CSG MOSFET具有能明顯減小短溝道效應(yīng)和熱載流子效應(yīng)的影響等優(yōu)點。其次,在圓柱坐標系下,建立了SC CSG MOSFET的三維體電勢模型。在本文中,此模型同時計入耗盡電荷和自由電荷的影響,可以更加精確的描述開態(tài)勢場。求解過程中,使用分離變量法和傅里葉逆變換法相結(jié)合,得到了SC CSG MOSFET的體電勢模型。然后基于三維模型,推導(dǎo)了SC CSG MOSFET的閾值電壓的解析模型。最后,比較了CS CSG MOSFET的建模結(jié)果和ATLAS模擬仿真結(jié)果,分析驗證了模型的準確性。通過對不同溝道結(jié)構(gòu)的SC CSG MOSFET電勢、電場和短溝道效應(yīng)進行分析,結(jié)果表明,SC CSG MOSFET改善了短溝道效應(yīng)和熱載流子效應(yīng),提高了擊穿特性。而且SC CSG MOSFET受高摻雜濃度變化的影響比較大,漏感應(yīng)勢壘降低效應(yīng)先增大后減��；而高摻雜區(qū)域長度對它影響比較小,但影響溝道遷移率和載流子的速度。此外通過對SC CSG MOSFET溝道結(jié)構(gòu)優(yōu)化進行分析,可以提高器件的可靠性。
[Abstract]:In recent years, due to the rapid development of science and technology, more and more high degree of integration. In order to meet the requirements of the development of integrated circuit, metal oxide semiconductor field effect transistor (MOSFET Metal-Oxide-Semiconductor, Field-Effect Transistor) the feature size decreases. At the same time also brought some bad results, seriously affect the reliability of the MOs device. Put forward higher requirements the development of technology, such as ultra shallow junction technology, strained channel technology. At the same time, there are many new three-dimensional structure, such as double gate and gate (CSG Cylindrical, Surrounding-gate MOSFET). The whole channel CSG MOSFET is surrounded by the gate, the gate has a good control of the channel and improve the short channel effect and effective suppression of short channel effect of the.CSG MOSFET, so that the transistor size can be further reduced. These advantages make CSG MOSFET become the extension of nano CMOS zoom One of the most promising structure circuit design. The proportion of the CSG MOSFET channel structure design of main ladder doped channel (steeped SC, doping channel) CSG MOSFET. and the working mechanism of uniformly doped channel CSG MOSFET, physical model and performance analysis, improve the breakdown characteristics of MOS devices and methods suppression of hot carrier effect. Firstly, the structure characteristic of the channel using the 3D simulation software ATLAS simulation SC CSG MOSFET: high doping concentration and high doping area length. Detailed analysis of different channel structure under the SC CSG MOSFET potential, electric field, I d- DS and d- GS V I V characteristics. Then the analysis of gate length the SC DG MOSFET and SC CSG MOSFET structure of the two kinds of threshold voltage drop and drain induced barrier lowering short channel effect. The results showed that SC CSG MOSFET can obviously reduce the short channel effect and hot carrier effect The influence of advantages. Secondly, in cylindrical coordinates, a 3D body model SC CSG MOSFET potential. In this paper, this model also included the effect of depletion charge and free charge, can more accurately describe the situation of open field. In the solving process, using the method of separation of variables and Fourier transform method. With the SC CSG MOSFET body potential model. Then based on the three-dimensional model, the analytical model of the threshold voltage of SC CSG MOSFET are derived. Finally, the modeling results of CS CSG MOSFET and the ATLAS simulation results, analysis of the accuracy of the model was verified by SC CSG. The MOSFET potential of different channel structure analysis of electric field, and the short channel effect. The results show that the SC CSG MOSFET to improve the short channel effect and hot carrier effect, improve the breakdown characteristics of CSG MOSFET and SC. The high doping concentration affected relatively large, The leakage induced barrier lowering effect first increases and then decreases, while the length of the high doped region has little effect on it, but it affects the channel mobility and carrier speed. In addition, the reliability analysis of SC CSG MOSFET channel structure can improve the reliability of the device.

【學(xué)位授予單位】：安徽大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2015
【分類號】：TN386

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本文編號：1767329