本文選題：高效多晶硅 + 異質(zhì)形核��； 參考：《太陽能學報》2017年02期

【摘要】：降低多晶硅晶體中的位錯密度,可以提高多晶硅電池的性能,目前多采用異質(zhì)形核的方法來生長柱狀晶粒,以降低晶體中的位錯密度,但是目前普遍采用的以SiO_2顆粒作為異質(zhì)形核點的方法容易導致硅錠底部和坩堝粘連,并導致硅錠中間隙氧(O_i)含量升高。該文通過制備局部氮化硅包覆的SiC-Si O_2復合顆粒(PCP)作為異質(zhì)形核點來生長柱狀晶粒。結(jié)果顯示采用適當粒徑(300~500μm)的PCP具有較好的引晶效果,且對應硅錠的O_i含量顯著降低。
[Abstract]:Decreasing dislocation density in polycrystalline silicon crystal can improve the performance of polycrystalline silicon battery. At present, the method of heterogeneous nucleation is used to grow columnar grains in order to reduce the dislocation density in polysilicon crystal.However, the widely used method of using SiO_2 particles as heterogeneous nucleation points easily leads to the adhesion between the bottom of the silicon ingot and the crucible, and to the increase of the content of oxygen oxide in the gap between the ingot and the crucible.In this paper, columnar grains were grown by fabricating SiC-Si O _ 2 composite particles coated with local silicon nitride as heterogeneous nucleation points.The results show that the PCP with proper diameter of 300 渭 m) has a good crystal inducing effect, and the content of oveni in the corresponding silicon ingot decreases significantly.
【作者單位】： 南京工業(yè)大學材料科學與工程學院;東海晶澳太陽能科技有限公司;西安華晶電子技術(shù)股份有限公司;
【基金】：國家重點基礎(chǔ)研究(973)發(fā)展計劃(2009CB623100) 江蘇省普通高校研究生科研創(chuàng)新計劃(CXZZ11-0326)
【分類號】：TM914.4;TN304.12
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本文編號：1765862