本文選題：總劑量效應(yīng) + 版圖加固��； 參考：《電子科技大學(xué)》2017年碩士論文

【摘要】：隨著空間技術(shù)以及核工程技術(shù)的快速發(fā)展,越來越多的CMOS集成電路不可避免地應(yīng)用于輻射環(huán)境中并受到各種輻射效應(yīng)的影響,為了保證CMOS電路的可靠性和性能,抗輻照加固技術(shù)的研究始終面臨著嚴(yán)峻的挑戰(zhàn)。本文以一種抗總劑量CMOS電路基本結(jié)構(gòu)為研究課題,提出一種抗總劑量基本晶體管結(jié)構(gòu),主要就其抗總劑量輻照能力以及其結(jié)構(gòu)特性對(duì)抗總劑量能力的影響進(jìn)行研究,并將其與傳統(tǒng)的版圖加固措施進(jìn)行對(duì)比。本文基于總劑量效應(yīng)的基本原理,深入研究總劑量輻照的物理過程以及總劑量效應(yīng)對(duì)MOS器件電學(xué)特性參數(shù)的影響,從工藝和版圖加固角度介紹目前業(yè)界常用的總劑量加固措施。基于總劑量的設(shè)計(jì)加固理念,本文提出一種抗總劑量基本晶體管結(jié)構(gòu),該結(jié)構(gòu)通過在普通NMOS晶體管的源漏區(qū)外圍形成P+摻雜區(qū)從而使得晶體管獲得抗總劑量輻照的能力。接著本文使用Sentaurus TCAD軟件平臺(tái)仿真對(duì)比所提出的晶體管結(jié)構(gòu)與普通的條柵NMOS晶體管,驗(yàn)證其總劑量加固的有效性,并在此基礎(chǔ)上提出一種變形結(jié)構(gòu),豐富其應(yīng)用范圍。然后進(jìn)一步研究對(duì)比所提出的晶體管結(jié)構(gòu)及相應(yīng)的變形結(jié)構(gòu)和普通條柵NMOS晶體管隨輻照劑量的變化,相應(yīng)的性能退化趨勢(shì),并研究對(duì)比它們輸出電流的差異。針對(duì)所提出的晶體管結(jié)構(gòu),本文繼續(xù)更加深入地研究其結(jié)構(gòu)特性對(duì)晶體管抗總劑量能力的影響。首先對(duì)比P+摻雜區(qū)有無直接連接到零電位兩種情況下晶體管抗總劑量能力的差別,從而提出可以采用P+摻雜區(qū)無連接的方式來節(jié)省晶體管的版圖布線資源,然后通過改變所提出晶體管的結(jié)構(gòu)參數(shù)詳細(xì)研究P+摻雜區(qū)濃度、寬度以及結(jié)深對(duì)晶體管抗總劑量能力的影響,接著研究P+摻雜區(qū)與N+源漏區(qū)的間距對(duì)晶體管的擊穿電壓和抗總劑量能力的影響。基于所提出的晶體管結(jié)構(gòu)以及相應(yīng)的變形結(jié)構(gòu)屬于總劑量版圖加固措施的范疇,本文進(jìn)一步將其與傳統(tǒng)的版圖加固措施進(jìn)行對(duì)比。首先仿真對(duì)比所提出的晶體管結(jié)構(gòu)與傳統(tǒng)版圖加固措施在抗總劑量能力方面的強(qiáng)弱,然后從基本門電路標(biāo)準(zhǔn)單元版圖實(shí)現(xiàn)角度對(duì)比各個(gè)晶體管結(jié)構(gòu)版圖實(shí)現(xiàn)中的面積消耗情況,從而可以直觀地衡量所提出的晶體管結(jié)構(gòu)以及相應(yīng)的變形結(jié)構(gòu)在實(shí)際工程應(yīng)用中的價(jià)值。
[Abstract]:With the rapid development of space technology and nuclear engineering technology, more and more CMOS integrated circuits are inevitably applied in radiation environment and affected by various radiation effects. In order to ensure the reliability and performance of CMOS circuits,The study of radiation-resistant reinforcement technology is always faced with severe challenges.In this paper, the basic structure of an anti-total dose CMOS circuit is taken as a research topic, and an anti-total dose basic transistor structure is proposed. The effects of its anti-total dose radiation ability and its structural characteristics against total dose ability are studied.And compare it with the traditional layout reinforcement measures.Based on the basic principle of total dose effect, the physical process of total dose irradiation and the effect of total dose effect on the electrical characteristic parameters of MOS devices are studied in this paper. From the point of view of technology and layout reinforcement, the measures commonly used in the field of total dose strengthening are introduced.Based on the design and reinforcement concept of total dose, this paper presents a structure of basic transistor against total dose, which makes the transistor gain the ability to resist total dose irradiation by forming P-doped region around the source and drain region of ordinary NMOS transistor.Then, we use the Sentaurus TCAD software platform to simulate and compare the proposed transistor structure with the ordinary stripe gate NMOS transistor, and verify the effectiveness of the total dose reinforcement. On this basis, a deformed structure is proposed to enrich its application range.Then we compare the proposed transistor structure with the corresponding deformed structure and the common stripe gate NMOS transistor with the radiation dose, the corresponding performance degradation trend, and compare the difference of their output current.In view of the proposed transistor structure, the influence of its structure characteristics on the total dose resistance of the transistor is further studied in this paper.First, the difference of the total dose resistance ability of the transistors with or without direct connection to the zero potential in the P-doped region is compared, and it is proposed that the layout and wiring resources of the transistors can be saved by using the connectionless method in the P-doped region.Then, by changing the structure parameters of the proposed transistor, the effects of the concentration, width and junction depth of the P-doped region on the total dose resistance of the transistor are studied in detail.Then the influence of the distance between the P doped region and the N source drain on the breakdown voltage and the total dose resistance of the transistor is studied.Based on the fact that the proposed transistor structure and the corresponding deformed structure belong to the category of total dose layout strengthening measures, this paper further compares them with the traditional layout strengthening measures.First, the strength of the proposed transistor structure is compared with that of the traditional layout reinforcement measures in terms of total dose resistance, and then the area consumption in the realization of each transistor structure layout is compared from the basic gate circuit standard cell layout realization point of view.Thus, the value of the proposed transistor structure and the corresponding deformed structure in practical engineering application can be measured intuitively.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2017
【分類號(hào)】：TN432

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