本文選題：InGaZnO_4 + 固相反應(yīng)燒結(jié)法　； 參考：《昆明理工大學(xué)》2015年碩士論文

【摘要】：銦鎵鋅氧化物(IGZO)材料是一種典型的透明金屬氧化物半導(dǎo)體材料,因其具有優(yōu)良的電學(xué)性能、光學(xué)性能以及穩(wěn)定性而被廣泛用于薄膜晶體管(TFTs)的制造,受到了光電領(lǐng)域研究學(xué)者和企業(yè)的高度關(guān)注。目前我國(guó)IGZO材料的研究和生產(chǎn)都處于初級(jí)階段,制備得到的IGZO靶材及薄膜大都含有多種物相,難以滿足高端IGZO產(chǎn)品的要求,使得IGZO產(chǎn)業(yè)鏈的建立受到影響,進(jìn)而阻礙我國(guó)信息化產(chǎn)業(yè)向著更高端化、更自主化的方向發(fā)展。因此對(duì)IGZO單相粉末制備的研究至關(guān)重要。本文主要研究工作為以下幾個(gè)方面：首先以固相燒結(jié)反應(yīng)法制備IGZO粉末,結(jié)合X射線衍射儀以及掃描電鏡對(duì)制得的粉末進(jìn)行物相組成和顆粒度的表征,探討制備過(guò)程中工藝參數(shù)對(duì)粉末品質(zhì)的影響。固相反應(yīng)過(guò)程中的燒結(jié)溫度直接決定了制得粉末的物相組成,只有在燒結(jié)溫度高于1200℃時(shí),才能得到InGaZnO4單相粉末,但如果繼續(xù)升高燒結(jié)溫度則會(huì)使粉末顆粒度增大。同時(shí)粉末顆粒度還會(huì)受到燒結(jié)時(shí)間、球料比以及球磨時(shí)間的影響。在一定范圍內(nèi),隨著燒結(jié)時(shí)間的延長(zhǎng)、球料比的增加、球磨時(shí)間的延長(zhǎng),粉末顆粒度會(huì)逐漸細(xì)化,但當(dāng)燒結(jié)時(shí)間長(zhǎng)于6h、球料比大于10：1或者球磨時(shí)間長(zhǎng)于18h時(shí),粉末發(fā)生團(tuán)聚,顆粒度反而增大。與此同時(shí)實(shí)驗(yàn)結(jié)果還顯示：分散劑的加入不會(huì)引入雜質(zhì),且大大減少了粉末的團(tuán)聚現(xiàn)象。根據(jù)工藝參數(shù)對(duì)制備IGZO粉末物相組成及顆粒度的影響而制定了最佳制備工藝：球磨過(guò)程球料比為10：1,加入分散劑球磨18h,固相反應(yīng)過(guò)程燒結(jié)溫度為1200℃,燒結(jié)時(shí)間為6h。最終制備得到只含有InGaZnO4單相,且顆粒度較小的、分散性較好的、顆粒形狀為不規(guī)則形的IGZO粉末。在實(shí)驗(yàn)的基礎(chǔ)上,利用第一性原理計(jì)算對(duì)實(shí)驗(yàn)中生成的InGaZnO4和ZnGa2O4物相的穩(wěn)定性進(jìn)行了研究。經(jīng)過(guò)對(duì)兩種結(jié)構(gòu)模型結(jié)合能、生成焓、布居分析以及電子結(jié)構(gòu)的計(jì)算和分析,得到了InGaZnO4比ZnGa2O4結(jié)構(gòu)更加穩(wěn)定的結(jié)論。在此結(jié)論的基礎(chǔ)上對(duì)制備IGZO粉末的反應(yīng)機(jī)制進(jìn)行了研究,對(duì)參加反應(yīng)的生成物及反應(yīng)物進(jìn)行了結(jié)合能的比較,結(jié)合能絕對(duì)值從小到大依次為：ZnO Ga2O3 ZnGa2O4 In2O3 InGaZnO4,所以反應(yīng)路徑為：ZnO和Ga203先反應(yīng),Ga2O3＋ZnO較低溫度ZnGa2O4;然后In203加入反應(yīng),ZnGa2O4+ZnO+In2O3較高溫度2InGaZnO4。最后利用CASTEP模塊對(duì)Sn摻雜In203結(jié)構(gòu)的ITO材料模型和以InGaZnO4為代表的IGZO材料模型的電子結(jié)構(gòu)和光學(xué)性質(zhì)進(jìn)行了計(jì)算和對(duì)比,結(jié)果顯示構(gòu)建的ITO模型與IGZO模型都具有優(yōu)良的導(dǎo)電性能和光學(xué)性能,都可滿足制備透明導(dǎo)電薄膜的要求。相比之下,ITO模型的導(dǎo)電性能比IGZO材料更好,而在可見光區(qū)及紅外光區(qū)IGZO材料與ITO材料的光學(xué)性能幾乎相同,但在紫外光區(qū)IGZO材料的吸收系數(shù)和反射系數(shù)比ITO材料的低。
[Abstract]:Indium gallium zinc oxide (IGZO) is a typical transparent metal oxide semiconductor material, which is widely used in the manufacture of thin film transistors (TFTs) because of its excellent electrical properties, optical properties and stability.It is highly concerned by the researchers and enterprises in the field of optoelectronics.At present, the research and production of IGZO materials in our country are in the primary stage. Most of the prepared IGZO targets and films contain a variety of phases, so it is difficult to meet the requirements of high-end IGZO products, so the establishment of the IGZO industrial chain is affected.And then hinder the development of our information industry towards higher-end, more autonomous direction.Therefore, it is very important to study the preparation of IGZO single phase powder.The main work of this paper is as follows: firstly, IGZO powder was prepared by solid phase sintering reaction. The phase composition and particle size of the powder were characterized by X-ray diffraction and scanning electron microscope.The effect of process parameters on powder quality was discussed.The phase composition of the powder is directly determined by the sintering temperature during the solid state reaction. Only when the sintering temperature is higher than 1200 鈩，

本文編號(hào)：1765353