本文選題：低噪聲放大器 + 匹配網(wǎng)絡(luò)��； 參考：《廣東工業(yè)大學(xué)》2017年碩士論文

【摘要】：低噪聲放大器是射頻系統(tǒng)中重要的組成部分,它處于接收機(jī)的第一級,影響著整個系統(tǒng)的噪聲和靈敏度。隨著無線電技術(shù)的發(fā)展,射頻接收端趨向小型化、高集成度和多頻段的設(shè)計方向,這對低噪聲放大器提出了更高的要求。在其基本理論和設(shè)計方法上,本文設(shè)計出了一個具有新型匹配結(jié)構(gòu)的雙頻寬帶低噪聲放大器。通過回顧國內(nèi)外低噪聲放大器的研究發(fā)展?fàn)顩r和課題要求,本文設(shè)計了一款工作于頻率1.2GHZ-1.25GHZ和1.556GHZ-1.608GHZ的三級寬帶雙頻低噪聲放大器,該放大器是采用Avago公司的ATF-54143晶體管和村田公司的電容電感搭建而成。在確定合適的靜態(tài)工作點后,同時兼顧絕對穩(wěn)定性和射頻扼流的目的,設(shè)計了整個偏置電路。采用并聯(lián)雙通道結(jié)構(gòu)的雙頻設(shè)計方法,兩個低噪聲放大器通過一個在全頻段具有高隔離度和高匹配度的合路器進(jìn)行功率合成。在匹配電路的設(shè)計上,基于短截線理論,采用了一個聯(lián)合微帶線和集總元件的匹配網(wǎng)絡(luò),其兼具集總元件和分布參數(shù)元件匹配網(wǎng)絡(luò)的特性。通過仿真軟件設(shè)計優(yōu)化,并且進(jìn)行了實物的測量,在經(jīng)過兩款放大器的調(diào)試工作后,兩個端口實測S11均在-10d B以下,且增益大于30d B,增益平坦度小于1d B。仿真噪聲系數(shù)在1d B以下,滿足工程設(shè)計需求。這款低噪聲放大器的成功設(shè)計,證實了基于短截線理論的聯(lián)合匹配網(wǎng)絡(luò)在多級低噪聲放大器應(yīng)用的可行性。運用在工作頻率內(nèi)具有高隔離度和高匹配度的合路器,能便于并聯(lián)雙通道中兩個放大器獨立工作,有效地增強其電路性能。整個低噪聲放大器具有很好的市場前景。
[Abstract]:Low noise amplifier (LNA) is an important part of RF system. It is in the first stage of receiver and affects the noise and sensitivity of the whole system.With the development of radio technology, the RF receiver tends to be miniaturized, with high integration and multi-band design, which puts forward higher requirements for LNA.In terms of its basic theory and design method, this paper designs a novel matching structure of dual-frequency broadband low-noise amplifier.By reviewing the research and development of low noise amplifiers at home and abroad, this paper designs a three-stage broadband dual-frequency low-noise amplifiers working in frequency 1.2GHZ-1.25GHZ and 1.556GHZ-1.608GHZ.The amplifier is made of ATF-54143 transistor of Avago Company and capacitive inductance of Murata Company.After determining the suitable static working point and taking into account the absolute stability and the purpose of RF choke, the whole bias circuit is designed.Using the dual-frequency design method of parallel two-channel structure, two low-noise amplifiers are synthesized by a combiner with high isolation and high matching degree in the full frequency band.In the design of matching circuit, based on truncation theory, a matching network of microstrip line and lumped element is adopted, which has the characteristics of lumped element and distributed parameter element matching network.After the debugging of two amplifiers, the measured S11 of the two ports is below -10 dB, the gain is more than 30 dB, and the gain flatness is less than 1 dB.The simulation noise coefficient is below 1dB, which meets the requirement of engineering design.The successful design of this low noise amplifier verifies the feasibility of the application of the joint matching network based on the truncation theory in the multistage low noise amplifier.The combiner with high isolation and high matching in the working frequency can facilitate the two amplifiers to work independently in parallel two channels, and effectively enhance the circuit performance of the combiner.The whole low noise amplifier has a good market prospect.
【學(xué)位授予單位】：廣東工業(yè)大學(xué)
【學(xué)位級別】：碩士
【學(xué)位授予年份】：2017
【分類號】：TN722.3

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