發(fā)布時(shí)間：2018-04-16 20:28

  本文選題：IGBT + 大功率��； 參考：《東南大學(xué)》2015年碩士論文

【摘要】：大功率IGBT在電力電子裝置中需承受極高的電壓、電流應(yīng)力及短路故障等惡劣的工作環(huán)境,IGBT驅(qū)動(dòng)器作為連接控制電路和功率電路的橋梁,直接決定了IGBT的運(yùn)行性能,通過(guò)高效可靠的IGBT驅(qū)動(dòng)器能使大功率IGBT運(yùn)行在優(yōu)化的工作狀態(tài)并能處理各種故障狀態(tài)。經(jīng)過(guò)研究分析IGBT內(nèi)部結(jié)構(gòu)、工作特性及失效機(jī)理,提出了大功率IGBT驅(qū)動(dòng)器需滿足的驅(qū)動(dòng)條件及保護(hù)要求。本文分別基于模擬電路和數(shù)字處理器FPGA分別設(shè)計(jì)了針對(duì)IHM 130 X 140mm和Prime PACKTM封裝的即插即用的大功率IGBT驅(qū)動(dòng)器。論文首先分析了IGBT內(nèi)部結(jié)構(gòu)及載流子運(yùn)動(dòng)特點(diǎn),并與外部工作特性相結(jié)合,進(jìn)行了IGBT失效機(jī)理研究。研究指出通過(guò)驅(qū)動(dòng)電壓的選擇可控制IGBT的工作區(qū),通過(guò)門極電阻的選擇可控制IGBT開(kāi)關(guān)速度;進(jìn)而提出基于反饋思想抑制關(guān)斷尖峰電壓的保護(hù)控制策略,設(shè)計(jì)了有源鉗位與di/dt反饋電路,并優(yōu)化了反饋回路關(guān)鍵參數(shù),同時(shí)采用基于恒流源的UCE檢測(cè)電路與軟關(guān)斷電路有效的防止了大功率IGBT由于短路故障引起熱擊穿現(xiàn)象的發(fā)生。論文基于模擬電路設(shè)計(jì)了針對(duì)IHM 130 X 140mm封裝的單管大功率IGBT驅(qū)動(dòng)器,包括DC/DC隔離輔助電源、信號(hào)調(diào)理電路、輔助源欠壓保護(hù)、基于UCE檢測(cè)的短路保護(hù)電路、有源鉗位電路和di/dt反饋電路等部分。建立了雙脈沖實(shí)驗(yàn)平臺(tái)與半橋?qū)嶒?yàn)平臺(tái),對(duì)驅(qū)動(dòng)板在各種工況下進(jìn)行了測(cè)試,驗(yàn)證了所設(shè)計(jì)的驅(qū)動(dòng)板的有效性及可靠性。論文繼續(xù)研究了目前新能源并網(wǎng)場(chǎng)合大量應(yīng)用的Prime PACKTM封裝半橋大功率IGBT驅(qū)動(dòng)器,針對(duì)采用模擬電路的驅(qū)動(dòng)器存在的不足,論文采用以FPGA為驅(qū)動(dòng)器系統(tǒng)信號(hào)處理的核心,能方便和準(zhǔn)確地安排驅(qū)動(dòng)與保護(hù)信號(hào)時(shí)序,有效的解決模擬電路中控制電路復(fù)雜和不一致等缺陷。論文提出了一種雙N-MOSFET推動(dòng)級(jí)電路結(jié)構(gòu),并與軟關(guān)斷電路配合,在短路故障時(shí)導(dǎo)通,能夠極大的減小短路保護(hù)時(shí)尖峰電壓值。最后,通過(guò)雙脈沖實(shí)驗(yàn)平臺(tái)進(jìn)行有源鉗位及短路保護(hù)驗(yàn)證,在半橋?qū)嶒?yàn)平臺(tái)模擬不同開(kāi)關(guān)頻率下高電壓、大電流應(yīng)用,實(shí)驗(yàn)結(jié)果表明,基于FPGA的半橋型驅(qū)動(dòng)器響應(yīng)速度快,具備完善的保護(hù)功能,能夠應(yīng)用于不同的工業(yè)應(yīng)用場(chǎng)合。
[Abstract]:The high power IGBT driver is used as a bridge to connect the control circuit and power circuit, which directly determines the operation performance of the IGBT, which has to bear the extremely high voltage, current stress and short circuit fault in the power electronic device.The high power IGBT driver can make the high power IGBT run in the optimized working state and deal with all kinds of fault states.The internal structure, working characteristics and failure mechanism of IGBT are analyzed, and the driving conditions and protection requirements of high power IGBT driver are put forward.In this paper, a plug and play high power IGBT driver for IHM 130X 140mm and Prime PACKTM encapsulation is designed based on analog circuit and digital processor FPGA, respectively.Firstly, the internal structure and carrier motion characteristics of IGBT are analyzed, and the failure mechanism of IGBT is studied by combining with external working characteristics.It is pointed out that the operation area of IGBT can be controlled by the choice of driving voltage, the switch speed of IGBT can be controlled by the choice of gate resistance, and the protection control strategy based on feedback to suppress the off peak voltage is put forward.The active clamp and di/dt feedback circuit are designed, and the key parameters of the feedback circuit are optimized. At the same time, the UCE detection circuit based on the constant current source and the soft off circuit are used to effectively prevent the thermal breakdown caused by the short circuit fault of the high power IGBT.Based on analog circuit, a single transistor high power IGBT driver is designed for IHM 130X 140mm package, including DC/DC isolation auxiliary power supply, signal conditioning circuit, auxiliary source undervoltage protection, short circuit protection circuit based on UCE detection.Active clamp circuit and di/dt feedback circuit.The dual-pulse experimental platform and half-bridge experimental platform are established, and the driving plate is tested under various working conditions, and the validity and reliability of the designed drive plate are verified.In this paper, we continue to study the half-bridge high-power IGBT driver encapsulated by Prime PACKTM, which is widely used in the field of new energy connection. Aiming at the deficiency of the driver using analog circuit, the paper uses FPGA as the core of signal processing in the driver system.It can arrange the timing of driving and protecting signals conveniently and accurately, and effectively solve the problems of complex and inconsistent control circuits in analog circuits.In this paper, a dual N-MOSFET boost circuit structure is proposed, which can greatly reduce the peak voltage during short circuit protection by combining with soft turn-off circuit to switch on in short circuit fault.Finally, the active clamp and short circuit protection are verified by dual pulse experimental platform. The high voltage and high current applications are simulated on the half-bridge experimental platform at different switching frequencies. The experimental results show that the response speed of the half-bridge driver based on FPGA is fast.Has perfect protection function, can be applied to different industrial applications.
【學(xué)位授予單位】：東南大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN322.8

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本文編號(hào)：1760459