本文選題：IGZO + C-V曲線　； 參考：《電子科技大學(xué)》2015年碩士論文

【摘要】：柔性半導(dǎo)體器件憑借其可彎曲、低成本、低功耗、生產(chǎn)簡易性和規(guī)�；韧怀鰞�(yōu)勢(shì)而存在廣闊的應(yīng)用前景,如曲面顯示、智能標(biāo)簽、小型計(jì)算芯片、可穿戴設(shè)備等,為用戶帶來全新的體驗(yàn)。柔性半導(dǎo)體器件需要由柔性材料制成,其中銦鎵鋅氧化物(Indium Gallium Zinc Oxide,即IGZO)是制造柔性半導(dǎo)體器件的主要材料之一。盡管目前柔性IGZO薄膜場效應(yīng)管(Thin Film Transistors,TFT)尚未實(shí)現(xiàn)批量生產(chǎn),但是此種器件容易與現(xiàn)有工藝實(shí)現(xiàn)兼容,且具有廣闊的應(yīng)用前景,因此國際上對(duì)IGZO柔性半導(dǎo)體器件進(jìn)行了深入而廣泛的研究。為了更好的將IGZO-TFT應(yīng)用到各種產(chǎn)品中,有必要對(duì)該器件的性質(zhì)進(jìn)行深入的研究。其中電容-偏壓特性(C-V特性)作為半導(dǎo)體器件的基本特性之一,能夠在一定程度上表征器件的性質(zhì)。一般情況下MOS結(jié)構(gòu)半導(dǎo)體器件的柵電極與源極或漏極之間會(huì)存在電容,電容會(huì)隨柵極電壓的變化而改變,變化過程可用C-V特性曲線描述。MOS結(jié)構(gòu)的C-V特性能夠表征器件的載流子濃度分布,陷阱在器件內(nèi)的分布、時(shí)間常數(shù)及陷阱能級(jí)的位置,以及放大器的頻率特性。IGZO器件與MOS結(jié)構(gòu)有相似之處,但是由于其材料的特殊性質(zhì),其低頻C-V曲線不存在反型區(qū)。因此有必要對(duì)IGZO器件的C-V特性進(jìn)行深入的研究。本文主要仿真研究了IGZO器件的C-V特性,具體研究內(nèi)容如下:首先對(duì)柔性材料IGZO的電學(xué)性質(zhì)進(jìn)行分析,其中重點(diǎn)分析其載流子特性,通過計(jì)算表明該材料的本征載流子濃度很低,為10-15cm-3量級(jí),根據(jù)該結(jié)論得到了溝道電子濃度與偏壓的關(guān)系,并建立仿真模型;其次,詳細(xì)論述了IGZO薄膜場效應(yīng)管的常見結(jié)構(gòu)——背柵結(jié)構(gòu),根據(jù)對(duì)稱性將仿真過程簡化,并根據(jù)有限差分原理劃分了器件的仿真單元;然后,根據(jù)矩陣形式的二維泊松方程,利用奇異值分解處理,求出器件的二維電勢(shì)分布,為了進(jìn)一步分析器件的C-V特性,在上述結(jié)果的基礎(chǔ)上,求解交流形式的二維泊松方程,得出了一定小信號(hào)頻率下器件的二維電勢(shì)分布;最后,通過電容的阻抗模型,仿真得出器件的C-V特性,在不同頻率下該仿真結(jié)果與已報(bào)導(dǎo)的實(shí)驗(yàn)結(jié)果基本一致,并通過交流電勢(shì)幅值與相位的二維分布,分析得出該結(jié)構(gòu)的高低頻電容在積累區(qū)的差異主要由于IGZO材料載流子濃度低,電阻率較高。
[Abstract]:Flexible semiconductor devices have broad application prospects because of their outstanding advantages such as bending, low cost, low power consumption, ease of production and scale, such as curved surface display, intelligent labels, small computing chips, wearable devices, etc.Bring new experience to users.Flexible semiconductor devices need to be fabricated from flexible materials. Indium Gallium Zinc oxide (IGZO) is one of the main materials for manufacturing flexible semiconductor devices.Although the thin Film transistors TFT (thin Film transistors) have not been produced in batches, this kind of device is easy to be compatible with the existing technology and has a wide application prospect.Therefore, IGZO flexible semiconductor devices have been studied deeply and extensively in the world.In order to better apply IGZO-TFT to all kinds of products, it is necessary to study the properties of the device.As one of the basic characteristics of semiconductor devices, capacitance-bias characteristic (C-V) can characterize the properties of semiconductor devices to a certain extent.In general, there is a capacitance between the gate electrode and the source or drain of the MOS semiconductor device, and the capacitance changes with the change of the gate voltage.The C-V characteristic of MOS structure can describe the carrier concentration distribution, trap distribution in the device, time constant and the position of trap energy level.The frequency characteristics of the amplifier. IGZO devices are similar to the MOS structure, but because of the special properties of the material, there is no inverse region in the low frequency C-V curve.Therefore, it is necessary to study the C-V characteristics of IGZO devices.In this paper, the C-V characteristics of IGZO devices are simulated and studied. The main contents are as follows: firstly, the electrical properties of the flexible material IGZO are analyzed, and the carrier characteristics are emphatically analyzed. The calculation results show that the intrinsic carrier concentration of the material is very low.According to the conclusion, the relationship between channel electron concentration and bias voltage is obtained, and the simulation model is established. Secondly, the common structure of IGZO thin film FET, the back gate structure, is discussed in detail, and the simulation process is simplified according to the symmetry.According to the finite difference principle, the simulation unit of the device is divided, and then, according to the two-dimensional Poisson equation in matrix form, the two-dimensional potential distribution of the device is obtained by using singular value decomposition, in order to further analyze the C-V characteristic of the device.On the basis of the above results, the two-dimensional Poisson equation in AC form is solved, and the two-dimensional potential distribution of the device at a certain small signal frequency is obtained. Finally, the C-V characteristic of the device is simulated by the impedance model of the capacitance.The simulation results are basically consistent with the reported experimental results at different frequencies. Through the two-dimensional distribution of the amplitude and phase of AC potential, it is found that the difference of the high and low frequency capacitance of the structure in the accumulative region is mainly due to the low carrier concentration of the IGZO material.The resistivity is higher.
【學(xué)位授予單位】：電子科技大學(xué)
【學(xué)位級(jí)別】：碩士
【學(xué)位授予年份】：2015
【分類號(hào)】：TN304.2

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