發(fā)布時(shí)間：2018-04-13 03:32

  本文選題：串?dāng)_ + SiC�。� 參考：《電工技術(shù)學(xué)報(bào)》2017年18期

【摘要】：由于SiC MOSFET開(kāi)關(guān)速度較快,使得橋式電路中串?dāng)_問(wèn)題更加嚴(yán)重,這樣不僅限制了SiC MOSFET開(kāi)關(guān)速度的提升,也會(huì)降低電力電子裝置的可靠性。針對(duì)SiC MOSFET的非開(kāi)爾文結(jié)構(gòu)封裝和開(kāi)爾文結(jié)構(gòu)封裝的串?dāng)_問(wèn)題分別進(jìn)行分析,柵漏極結(jié)電容的充放電電流和共源寄生電感電壓均會(huì)引起處于關(guān)斷狀態(tài)開(kāi)關(guān)管的柵源極電壓變化。提出一種用于抑制串?dāng)_問(wèn)題的驅(qū)動(dòng)電路,該驅(qū)動(dòng)電路具有柵極關(guān)斷阻抗低、結(jié)構(gòu)簡(jiǎn)單、易于控制的特點(diǎn)。分析該驅(qū)動(dòng)電路的工作原理,提供主要參數(shù)的計(jì)算方法。最后通過(guò)實(shí)驗(yàn)測(cè)試了兩種結(jié)構(gòu)封裝SiC MOSFET的串?dāng)_問(wèn)題,并且對(duì)提出的驅(qū)動(dòng)電路進(jìn)行了實(shí)驗(yàn),驗(yàn)證了其正確性以及對(duì)串?dāng)_問(wèn)題的抑制效果。
[Abstract]:Because of the fast switching speed of SiC MOSFET, the crosstalk problem in bridge circuits is more serious, which not only limits the speed of SiC MOSFET switch, but also reduces the reliability of power electronic devices.The crosstalk problems of SiC MOSFET non-Kelvin structure package and Kelvin structure package are analyzed respectively. The charge / discharge current of gate drain junction capacitor and the common source parasitic inductance voltage will cause the change of gate source voltage in switch on state.A drive circuit for crosstalk suppression is proposed. The drive circuit has the advantages of low gate turn-off impedance, simple structure and easy control.The working principle of the drive circuit is analyzed, and the calculation method of the main parameters is provided.Finally, the crosstalk problem of SiC MOSFET encapsulated with two kinds of structures is tested experimentally, and the proposed drive circuit is tested to verify its correctness and the effectiveness of suppressing crosstalk problem.
【作者單位】： 北京交通大學(xué)電氣工程學(xué)院;
【分類號(hào)】：TN386

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